September 2013
DocID023650 Rev 2
1/18
This is information on a product in full production.
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SD2931-12MR
150 W – 50 V moisture resistant HF/VHF DMOS transistor
Datasheet - production data
Figure 1: Pin connection
Features
Gold metallization
Excellent thermal stability
Common source, push-pull configuration
POUT = 150 W min. with 14 dB gain @ 175
MHz
Thermally enhanced packaging for lower
junction temperatures
GFS and VGS sort marked on unit
Moisture resistant package specifically
designed to operate in extreme
environments
Description
The SD2931-12MR is a gold metallized N-
channel MOS field-effect RF power transistor.
Electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V DC large
signal applications up to 230 MHz.
The SD2931-12MR is mechanically compatible
with the SD2931 but offers better thermal
capability (25% lower thermal resistance),
representing the best-in-class in transistors for
ISM applications, where reliability and
ruggedness are critical factors.
The SD2931-12MR benefits from the latest
generation of environmentally designed
packaging, ruggedized against cyclic high
moisture operation and severe storage
conditions.
Table 1: Device summary
Order code
Package
Packaging
SD2931-12MR
M174MR
Plastic tray
Notes:
(1) For more details please refer to "Marking, packing
and shipping specifications".
M174MR Epoxy sealed
1. Drain
2. Source
3. Gate
4. Source
1
23
4
Contents
SD2931-12MR
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Contents
1 Electrical data .................................................................................. 3
1.1 Maximum rating ................................................................................. 3
1.2 Thermal data ..................................................................................... 3
2 Electrical characteristics ................................................................ 4
3 Impedance ....................................................................................... 5
4 Transient thermal impedance ......................................................... 6
5 Typical performance ....................................................................... 8
5.1 Typical performance (175 MHz) ........................................................ 9
5.1.1 Test circuit (175 MHz) ...................................................................... 10
5.3 Typical performance (30 MHz) ........................................................ 12
5.3.1 Test circuit (30 MHz) ........................................................................ 13
6 Marking, packing and shipping specifications ............................ 14
7 Package information ..................................................................... 15
7.1 M174MR package information ........................................................ 15
8 Revision history ............................................................................ 17
SD2931-12MR
Electrical data
DocID023650 Rev 2
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1 Electrical data
1.1 Maximum rating
T CASE= 25 °C
Table 2: Absolute maximum rating
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain source voltage
125
V
VDGR
Drain-gate voltage (RGS = 1MW)
125
V
VGS
Gate-source voltage
±20
V
ID
Drain current
20
A
PDISS
Power dissipation
389
W
TJ
Max. operating junction temperature
200
°C
TSTG
Storage temperature
-65 to +150
°C
1.2 Thermal data
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Junction to case thermal resistance
0.45
°C/W
Electrical characteristics
SD2931-12MR
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DocID023650 Rev 2
2 Electrical characteristics
T CASE= 25 °C
Table 4: Static
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
VGS = 0 V IDS = 100 mA
125
V
IDSS
VGS = 0 V VDS = 5 V
VGS = 0 V VDS = 50 V
20
50
µA
IGSS
VGS = 20 V VDS = 0 V
250
nA
VGS(Q)(1)
VDS = 10 V ID = 250 mA
see table below
V
VDS(ON)
VGS = 10 V I D = 10 A
3.0
V
GFS(1)
VDS = 10 V I D = 5 A
see table below
mho
CISS
VGS = 0 V VDS = 50 V f = 1 MHz
480
pF
COSS
VGS = 0 V VDS = 50 V f = 1 MHz
190
pF
CRSS
VGS = 0 V VDS = 50 V f = 1 MHz
18
pF
Notes:
(1)VGS(Q) and GFS sorted with alpha/numeric code marked on unit.
Table 5: VGS and GFS sorts
VGS
GFS
I
2.65 - 3.15
6.0 - 6.5
J
2.65 - 3.15
6.5 - 7.0
K
2.65 - 3.15
7.0 - 7.5
Table 6: Dynamic
Symbol
Test conditions
Min.
Typ.
Max.
Unit
POUT
VDD = 50 V IDQ = 250 mA
f = 175MHz
150
W
GPS
VDD = 50 V IDQ = 250 mA POUT = 150 W
f = 175MHz
14
15
dB
ηD
VDD = 50 V IDQ = 250 mA POUT = 150 W
f = 175MHz
55
65
%
Load mismatch
VDD = 50 V IDQ = 250 mA POUT = 150 W
f = 175MHz
all phase angles
10:1
VSWR
SD2931-12MR
Impedance
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3 Impedance
Figure 2: Impedance data schematic
Table 7: Impedance data
f
Z IN(Ω)
Z DL(Ω)
30 MHz
1.7 - j 5.7
6.8 + j 0.9
175 MHz
1.2 - j 2.0
2.0 + j 2.4
Typical input
impedance Typical load
impedance
ZDL
D
S
ZIN
G
Transient thermal impedance
SD2931-12MR
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4 Transient thermal impedance
Figure 3: Transient thermal impedance
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Thermalimpedance -ZTHJ-C (°C / W)
Rectangularpowerpulse width(sec)
singlepulse
10%
20%
30%
40%
50%
60%
70%
80%
90%
Single - repetitive pulse
AM09280V1
SD2931-12MR
Transient thermal impedance
DocID023650 Rev 2
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Figure 4: Transient thermal impedance model
R1
R=0.023Ohm
C
C4
C=.2057373F
C
C3
C=.0244758F
C
C2
C=.0021832F
C
C1
C=.0020978F
R
R4
R=.155Ohm
R
R3
R=.200Ohm
R
R2
R=.072Ohm
DissipatedPower_Watts
AM09281V1
Typical performance
SD2931-12MR
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5 Typical performance
Figure 5: Capacitance vs. drain voltage
Figure 6: Drain current vs. gate voltage
Figure 7: Gate-source voltage vs. case
temperature
Figure 8: Maximum thermal resistance vs. case
temperature
Figure 9: Safe operating area
0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
10000
Ciss
Coss
Crss
f =1MHz
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
VDS = 10 V
TC, CASETEMPERATURE (°C)
25 35 45 55 65 75 85
0.44
0.48
0.52
0.56
0.6
TC, CASETEMPERATURE (°C)
SD2931-12MR
Typical performance
DocID023650 Rev 2
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5.1 Typical performance (175 MHz)
Figure 10: Output power vs. input power
Figure 11: Output power vs. input power at
different Tc
Figure 12: Power gain vs. output power
Figure 13: Efficiency vs. output power
Figure 14: Output power vs. supply voltage
Figure 15: Drain current vs. gate-source voltage
0 5 10 15 20 25
0
30
60
90
120
150
180
210
240
270
f= 175MHz
Idq= 250mA
Vdd= 40V
Vdd= 50V
PIN, INPUT POWER (W)
0 5 10 15 20 25
0
30
60
90
120
150
180
210
240
270
Vdd= 50V
Idq= 250mA
f= 175MHz
Tc =-20 °C
Tc =+25 °C
Tc =+80 °C
PIN, INPUT POWER (W)
050 100 150 200 250
6
8
10
12
14
16
18
Vdd=50V
Idq=250mA
f=175Mhz
POUT, INPUT POWER (W)
0 50 100150200250
20
30
40
50
60
70
80
Vdd=50V
Idq=250mA
f=175Mhz
POUT, INPUT POWER (W)
24 28 32 36 40 44 48 52
0
30
60
90
120
150
180
210
240
270
Pin =2.5W
Pin =5W
Pin =10W
Idq= 250mA
f= 175MHz
VDD, DRAIN VOLTAGE (V)
2 2.5 3 3.5 4 4.5 5 5.5 6
0
5
10
15
20
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
VGS, GATE-SOURCE VOLTAGE (V)
Typical performance
SD2931-12MR
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DocID023650 Rev 2
5.1.1 Test circuit (175 MHz)
Figure 16: 175 MHz test circuit schematic (production test circuit)
Table 8: 175 MHz test circuit parts list
Component
Description
T1
4:1 transformer, 25 Ω flexible coax .090 OD 6” long
T2
1:4 transformer, 25 Ω semi-rigid coax .141 OD 6” long
FB1
Toroid X 2, 0.5” OD .312” ID 850µ 2 turns
FB2, FB3
VK200
FB4
Shield bead, 1” OD 0.5” ID 850µ 3 turns
L1
1/4 wave choke, 50 Ω semi-rigid coax .141 OD 12” Long
PCB
0.62” woven fiberglass, 1 oz. copper, 2 Sides, εr = 2.55
R1, R3
470 Ω 1 W chip resistor
R2
360 Ω 1/2 W resistor
R4
20 kΩ 10 turn potentiometer
R5
560 Ω 1 W resistor
C1, C11
470 pF ATC chip cap
C2
43 pF ATC chip cap
C3, C8, C9
Arco 404, 12-65 pF
C4
Arco 423, 16-100 pF
C5
120 pF ATC chip cap
C6
0.01 µF ATC chip cap
C7
30 pF ATC chip cap
C10
91 pF ATC chip cap
C12, C15
1200 pF ATC chip cap
C13, C14,C16, C17
0.01 µF / 500 V chip cap
C18
10 µF 63 V electrolytic capacitor
VG+50V
SD2931-12MR
Typical performance
DocID023650 Rev 2
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Figure 17: 175 MHz test circuit photomaster
Figure 18: 175 MHz test circuit
Typical performance
SD2931-12MR
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5.3 Typical performance (30 MHz)
Figure 19: Output power vs. input power
Figure 20: Power gain vs. output power
Figure 21: Efficiency vs. output power
Figure 22: Output power vs. supply voltage
Figure 23: Output power vs. gate-source voltage
0
50
100
150
200
250
0 0.1 0.2 0.3 0.4 0.5
Pin (W )
Pout(W)
V
dd
= 50 V
f = 30 MHz
ID Q = 250 m A
Vd d = 40 V
24
25
26
27
28
29
30
0 40 80 120160200
Pout (W )
Gp (dB)
f = 30 MH z
VD D = 50 V
ID Q = 250 m A
0
10
20
30
40
50
60
70
0 4 0 80 1 20 160 200
P ou t (W )
Nd (%)
f = 30 MHz
VD D = 50 V
ID Q = 250 m A
0
20
40
60
80
100
120
140
160
180
200
24 28 32 36 40 44 48 52
Vdd (V)
Pout (W)
f = 30 MHz
ID Q = 250 m A
Pin = 0.31 W
Pin = 0.22 W
Pin = 0.13 W
0
20
40
60
80
100
120
140
160
180
0123456
VG S (V)
Pout (W)
VD D = 50 V
ID Q = 250 m A
f = 30 MHz
P in = C o ns tant
T = -20 °C
T = + 25 °C
T = + 80 °C
SD2931-12MR
Typical performance
DocID023650 Rev 2
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5.3.1 Test circuit (30 MHz)
Figure 24: 30 MHz test circuit schematic (production test circuit)
Table 9: 30 MHz test circuit part list
Component
Description
T1
9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15”
long
T2
1:4 transformer, 50 Ω flexible coax .225 OD 15” long
FB1
Toroid 1.7” OD .30” ID 220µ 4 turns
FB2
Surface mount EMI shield bead
FB3
Toroid 1.7” OD .300” ID 220µ 3 turns
RFC1
Toroid 0.5” OD 0.30” ID 125µ 4 turns 12 awg wire
PCB
0.62” woven fiberglass, 1 oz. copper, 2 Sides, εr = 2.55
R1, R3
1 kohm 1 W chip resistor
R2
680 ohm 3 W wirewound resistor
C1,C4,C6,C7,C8,C9,
C11,C12,C13
0.1 μF ATC chip cap
C2,C3
750 pF ATC chip cap
C5
470 pF ATC chip cap
C10
10 μF 63 V electrolytic capacitor
C14
100 μF 63 V electrolytic capacitor
VG++50V
Marking, packing and shipping specifications
SD2931-12MR
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6 Marking, packing and shipping specifications
Table 10: Packing and shipping specifications
Order code
Packaging
Pcs per
tray
Dry pack humidity
VGS and GFS code
Lot code
SD2931-12MR
Plastic tray
25
< 10%
Not mixed
Not mixed
Figure 25: Marking layout for SD2391-12MR
Table 11: Marking specifications
Symbol
Description
X
VGS and GFS sort
CZ
Assembly plant
xxx
Last 3 digits of diffusion lot
VY
Diffusion plant
MAR
Country of origin
CZ
Test and finishing plant
y
Assembly year
yy
Assembly week
AM14750V1
SD2931-12MR
Package information
DocID023650 Rev 2
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7 Package information
7.1 M174MR package information
Figure 26: M174MR drawing
8410504_A
Package information
SD2931-12MR
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Table 12: M174MR mechanical data
Dim.
mm
Min.
Typ.
Max.
A
5.56
5.84
B
3.18
C
6.22
6.48
D
18.29
18.54
E
3.18
F
24.64
24.89
G
12.07
12.83
H
0.08
0.18
I
2.11
3.00
J
3.81
4.45
K
8.00
L
25.53
26.67
M
3.05
3.30
SD2931-12MR
Revision history
DocID023650 Rev 2
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8 Revision history
Table 13: Document revision history
Date
Revision
Changes
20-Feb-2013
1
First issue.
10-Sep-2013
2
Document promoted from preliminary data to full datasheet.
Formatting and minor text changes.
SD2931-12MR
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DocID023650 Rev 2
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