SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 1 Rev. 2.3 Sep. 07
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C Eoff Tj Marking Package
SGP02N120 1200V 2A 0.11mJ
150°C GP02N120 PG-TO-220-3-1
SGD02N120 1200V 2A 0.11mJ
150°C 02N120 PG-TO-252-3-11
SGI02N120 1200V 2A 0.11mJ
150°C GI02N120 PG-TO-262-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current
TC = 25°C
TC = 100°C
IC
6.2
2.8
Pulsed collector current, tp limited by Tjmax ICpuls 9.6
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
- 9.6
A
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse
IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
EAS 10 mJ
Short circuit withstand time2
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
tSC 10 µs
Power dissipation
TC = 25°C
Ptot 62 W
Operating junction and storage temperature Tj , Tstg -55...+150
Soldering temperature,
PG-TO252 (reflow soldering, MSL3)
Other packages: 1.6mm (0.063 in.) from case for 10s
-
260
260
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-220-3-1
PG-TO-252-3-11
(D-PAK)
PG-TO-262-3-1
(I²-PAK)
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 2 Rev. 2.3 Sep. 07
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 2.0
Thermal resistance,
junction – ambient
RthJA PG-TO-220-3-1
PG-TO-262-3-1
62
SMD version, device on PCB1) RthJA PG-TO-252-3-11 50
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=100µA 1200 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
2.5
-
3.1
3.7
3.6
4.3
Gate-emitter threshold voltage VGE(th) IC=100µA,VCE=VGE 3 4 5
V
Zero gate voltage collector current
ICES VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
25
100
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=2A 1.5 - S
Dynamic Characteristic
Input capacitance Ciss - 205 250
Output capacitance Coss - 20 25
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 12 14
pF
Gate charge QGate VCC=960V, IC=2A
VGE=15V
- 11 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE -
7
-
nH
Short circuit collector current2) IC(SC) VGE=15V,tSC≤10µs
100V≤VCC≤1200V,
Tj ≤ 150°C
- 24 - A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 3 Rev. 2.3 Sep. 07
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 23 30
Rise time tr - 16 21
Turn-off delay time td(off) - 260 340
Fall time tf - 61 80
ns
Turn-on energy Eon - 0.16 0.21
Turn-off energy Eoff - 0.06 0.08
Total switching energy Ets
Tj=25°C,
VCC=800V,IC=2A,
VGE=15V/0V,
RG=91Ω,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
- 0.22 0.29
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 26 31
Rise time tr - 14 17
Turn-off delay time td(off) - 290 350
Fall time tf - 85 102
ns
Turn-on energy Eon - 0.27 0.33
Turn-off energy Eoff - 0.11 0.15
Total switching energy Ets
Tj=150°C
VCC=800V,
IC=2A,
VGE=15V/0V,
RG=91Ω,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
- 0.38 0.48
mJ
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 4 Rev. 2.3 Sep. 07
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
2A
4A
6A
8A
10A
12A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0
.01A
0.1A
1A
10A
DC
20ms
150µs
50µs
500µs
tp=10µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 91Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
10W
20W
30W
40W
50W
60W
IC, COLLECTOR CURRENT
25°C 50°C 75°C 100°C 125°C
0A
1A
2A
3A
4A
5A
6A
7A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Ic
Ic
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 5 Rev. 2.3 Sep. 07
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V 7V
0A
1A
2A
3A
4A
5A
6A
7A
15V
13V
11V
9V
7V
VGE=17V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V 7V
0A
1A
2A
3A
4A
5A
6A
7A
15V
13V
11V
9V
7V
VGE=17V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
IC, COLLECTOR CURRENT
3V 5V 7V 9V 11
V
0A
1A
2A
3A
4A
5A
6A
7
A
Tj=-40°C
Tj=+150°C
Tj=+25°C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
IC=4A
IC=2A
IC=1A
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(VCE = 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 6 Rev. 2.3 Sep. 07
t, SWITCHING TIMES
0A 2A 4A 6
A
8
A
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
0Ω50Ω100Ω150Ω
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 91Ω,
dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 2A,
dynamic test circuit in Fig.E)
t, SWITCHING TIMES
-50°C 0°C 50°C 100°C 150°C
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
typ.
min.
max.
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 2A, RG = 91Ω,
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 7 Rev. 2.3 Sep. 07
E, SWITCHING ENERGY LOSSES
0A 2A 4A 6
A
8
A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
Eon*
Eoff
Ets*
E, SWITCHING ENERGY LOSSES
0Ω50Ω100Ω150Ω
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
Ets*
Eon*
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 91Ω,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 2A,
dynamic test circuit in Fig.E )
E, SWITCHING ENERGY LOSSES
-50°C 0°C 50°C 100°C 150°C
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
Ets*
Eon*
Eoff
ZthJC, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1
s
10-2K/W
10-1K/W
100K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 2A, RG = 91Ω,
dynamic test circuit in Fig.E )
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
R,(K/W)
τ
, (s)
0.66735 0.04691
0.70472 0.00388
0.62778 0.00041
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 8 Rev. 2.3 Sep. 07
VGE, GATE-EMITTER VOLTAGE
0nC 5nC 10nC 15n
0V
5V
10V
15V
20V
UCE=960V
C, CAPACITANCE
0V 10V 20V 30V
10pF
100pF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC = 2A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
tsc, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V 15V
0µs
5µs
10µs
15µs
20µs
25µs
30
µ
s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
10V 12V 14V 16V 18V 20V
0A
10A
20A
30A
40A
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V ≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 9 Rev. 2.3 Sep. 07
PG-TO220-3-1
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 10 Rev. 2.3 Sep. 07
PG-TO252-3-11
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 11 Rev. 2.3 Sep. 07
PG-TO262-3-1 (I² Pak)
BA0.25 M
Typical
2.54 3 x 0.75 ±0.1
1.05
1.27
B
9.25 ±0.2
0.05
1)
Metal surface min. X = 7.25, Y = 6.9
C
11.6 ±0.3
10 ±0.2
C
2.4 0.5 ±0.1
±0.2
4.55
13.5 ±0.5
All metal surfaces tin plated, except area of cut.
±0.3
1
8.51)
2 x
4.4
7.551)
0...0.15
0...0.3
2.4
A
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 12 Rev. 2.3 Sep. 07
Figure A. Definition of switching times
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ
=180nH,
and stray capacity Cσ =40pF.
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SGP02N120
SGD02N120, SGI02N120
Power Semiconductors 13 Rev. 2.3 Sep. 07
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/12/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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