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Old Company Name in Catalogs and Other Documents
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April 1st, 2010
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Notice
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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The mark <R> shows major revised points.
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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
Printed in Japan
1999, 2009
FEATURES
Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
3-pin ultra super minimold (19, 1608 PKG) package
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
2SC5606 2SC5606-A 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5606-T1 2SC5606-T1-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free) 3 kpcs/reel • Pin 3 (collector) face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PtotNote 115 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg 65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate
<R>
Data Sheet PU10781EJ01V0DS
2
2SC5606
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 200 nA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA 200 nA
DC Current Gain hFENote 1 VCE = 2 V, IC = 5 mA 60 80 100
RF Characteristics
Gain Bandwidth Product fT VCE = 2 V, IC = 20 mA, f = 2 GHz 21 GHz
Insertion Power Gain S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz 10 12.5 dB
Noise Figure NF VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt – 1.2 1.5 dB
Reverse Transfer Capacitance CreNote 2 VCB = 2 V, IE = 0 mA, f = 1 MHz 0.21 0.3 pF
Maximum Available Power Gain MAG Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz 14 dB
Maximum Stable Power Gain MSG Note 4 VCE = 2 V, IC = 20 mA, f = 2 GHz 15 dB
Notes 1. Pulse measurement: PW 350
μ
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
hFE CLASSIFICATION
Rank FB/YFB
Marking UA
hFE 60 to 100
(K – (K2 – 1) )
S21
S12
S21
S12
<R>
Data Sheet PU10781EJ01V0DS 3
2SC5606
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
Mounted on Glass Epoxy Board
(1.08 cm2 × 1.0 mm (t) )
200
150
115
100
50
0250 50 75 100 125 150
Total Power Dissipation Ptot (mW)
Ambient Temperature TA (°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
1.0
0.1 1.00.1 10.0 100.0
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
650 A
μ
IB 100 A step
μ
IB = 50 A
μ
250 A
μ
450 A
μ
40
30
20
10
0123
04
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
50
40
30
20
10
0 0.2 0.4 0.6 0.8 1.0 1.2
VCE = 2 V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
10
0.1 10.01.0 100.0
VCE = 2 V
Remark The graphs indicate nominal characteristics.
<R>
Data Sheet PU10781EJ01V0DS
4
2SC5606
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
VCE = 1 V
IC = 10 mA
35
25
30
20
15
10
5
0
0.1 1.0 10.0
Insertion Power Gain |S21e|2 (dB)
Frequency f (GHz)
INSERTION POWER GAIN
vs. FREQUENCY
VCE = 2 V
IC = 20 mA
35
25
30
20
15
10
5
0
0.1 1.0 10.0
Insertion Power Gain |S21e|2 (dB)
Frequency f (GHz)
INSERTION POWER GAIN
vs. FREQUENCY
30
25
20
15
10
5
01 10 100
VCE = 1 V
f = 2 GHz
30
25
20
15
10
5
01 10 100
VCE = 2 V
f = 2 GHz
16
14
12
10
8
6
4
2
01 10 100
VCE = 1 V
f = 2 GHz
16
14
12
10
8
6
4
2
01 10 100
VCE = 2 V
f = 2 GHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10781EJ01V0DS 5
2SC5606
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
Collector Current I
C
(mA)
3.0
2.5
2.0
1.5
1.0
0.5
01 10 100
V
CE
= 2 V
f = 2 GHz
Remark The graph indicates nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] [Device Parameters]
URL http://www.necel.com/microwave/en/
<R>
Data Sheet PU10781EJ01V0DS
6
2SC5606
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm)
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
0.75±0.05
0.6
0 to 0.1
0.15+0.1
–0.05
1.6±0.1
1.0
0.50.5
0.3+0.1
–0
1.6±0.1
0.8±0.1
0.2+0.1
–0
1
2
3
U A
2SC5606
The information in this document is current as of August, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
M8E0904E
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":