LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 70
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC590
v02.0109
General Description
Features
Functional Diagram
The HMC590 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Ampli er which operates from
6 to 10 GHz. This ampli er die provides 24 dB of
gain, +31.5 dBm of saturated power at 25% PAE
from a +7V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
in a 50 ohm test xture connected via 0.025mm (1
mil) diameter wire bonds of length 0.31mm (12 mils).
For applications which require optimum OIP3, Idd
should be set for 520 mA, to yield +41 dBm OIP3.
For applications which require optimum output P1dB,
Idd should be set for 820 mA, to yield up to +32 dBm
Output P1dB.
Saturated Output Power: +31.5 dBm @ 25% PAE
Output IP3: +41 dBm
Gain: 24 dB
DC Supply: +7V @ 820 mA
50 Ohm Matched Input/Output
Die Size: 2.47 x 1.33 x 0.1 mm
Electrical Speci cations, TA = +25° C, Vdd = +7V, Idd = 820 mA[1]
Typical Applications
The HMC590 is ideal for use as a power ampli er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 6 - 10 6.8 - 9 GHz
Gain 21 24 22 25 dB
Gain Variation Over Temperature 0.05 0.07 0.05 0.07 dB/ °C
Input Return Loss 10 10 dB
Output Return Loss 10 10 dB
Output Power for 1 dB
Compression (P1dB) 27 30 28.5 31.5 dBm
Saturated Output Power (Psat) 31.5 32 dBm
Output Third Order Intercept (IP3)[2] 41 41 dBm
Supply Current (Idd) 820 820 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.
[2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
456789101112
S21
S11
S22
RESPONSE (dBm)
FREQUENCY (GHz)
HMC590
v02.0109 GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
-25
-20
-15
-10
-5
0
456789101112
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
25
27
29
31
33
35
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
25
27
29
31
33
35
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
456789101112
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
10
14
18
22
26
30
34
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 72
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Power Compression @ 8 GHz, 7V @ 820 mA
Output IP3 vs. Temperature
7V @ 520 mA, Pin/Tone = -15 dBm
Output IM3, 7V @ 520 mA Output IM3, 7V @ 820 mA
HMC590
v02.0109 GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
0
10
20
30
40
50
60
70
80
-20 -16 -12 -8 -4 0 4 8
6GHz
7GHz
8GHz
9GHz
10GHz
IM3 (dBc)
Pin/Tone (dBm)
0
5
10
15
20
25
30
35
-14 -10 -6 -2 2 6 10 14
Pout
Gain
PAE
Pout(dBm), GAIN (dB), PAE(%)
INPUT POWER (dBm)
0
10
20
30
40
50
60
70
80
-20 -16 -12 -8 -4 0 4 8
6GHz
7GHz
8GHz
9GHz
10GHz
IM3 (dBc)
Pin/Tone (dBm)
26
30
34
38
42
46
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-55C
IP3 (dBm)
FREQUENCY (GHz)
Psat vs. CurrentP1dB vs. Current
25
27
29
31
33
35
6 6.5 7 7.5 8 8.5 9 9.5 10
520 mA
620 mA
720 mA
820 mA
Psat (dBm)
FREQUENCY (GHz)
25
27
29
31
33
35
6 6.5 7 7.5 8 8.5 9 9.5 10
520 mA
620 mA
720 mA
820 mA
P1dB (dBm)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 73
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Reverse Isolation
vs. Temperature, 7V @ 820 mA Power Dissipation
HMC590
v02.0109 GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
-80
-70
-60
-50
-40
-30
-20
-10
0
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
Gain & Power vs. Supply Current @ 8 GHzGain & Power vs. Supply Voltage @ 8 GHz
20
22
24
26
28
30
32
34
6.5 7 7.5
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat(dBm)
Vdd SUPPLY VOLTAGE (Vdc)
20
22
24
26
28
30
32
34
520 620 720 820
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat(dBm)
Idd SUPPLY CURRENT (mA)
3
3.5
4
4.5
5
5.5
6
-14 -10 -6 -2 2 6 10 14
6GHz
7GHz
8GHz
9GHZ
10GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC590
v02.0109 GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8 Vdc
Gate Bias Voltage (Vgg) -2.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 67 mW/°C above 85 °C) 6.0 W
Thermal Resistance
(channel to die bottom) 14.9 °C/ W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
+6.5 824
+7.0 820
+7.5 815
Typical Supply Current vs. Vdd
Note: Ampli er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 75
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled and
matched to 50 Ohms.
2Vgg
Gate control for ampli er. Adjust to achieve Idd of 820 mA.
Please follow “MMIC Ampli er Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
3 - 5 Vdd 1-3 Power Supply Voltage for the ampli er. External bypass
capacitors of 100 pF and 0.1 μF are required.
6RFOUT This pad is AC coupled and
matched to 50 Ohms.
Die Bottom GND Die bottom must be connected to RF/DC ground.
HMC590
v02.0109 GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC590
v02.0109 GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
Assembly Diagram
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should
be clean and at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC590
v02.0109 GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
