SPICE MODEL: MMBT4401 MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction SOT-23 Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 A Available in Lead Free/RoHS Compliant Version (Note 2) C Mechanical Data * * * * * * * * * B Case: SOT-23 TOP VIEW B E D E Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 C G H Moisture Sensitivity: Level 1 per J-STD-020C K Terminal Connections: See Diagram J Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 M L C Marking (See Page 2): K2X Maximum Ratings 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 8 All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) J E B @ TA = 25C unless otherwise specified Characteristic Symbol MMBT4401 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30039 Rev. 6 - 2 1 of 4 www.diodes.com MMBT4401 a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO 40 3/4 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 3/4 V IE = 100mA, IC = 0 ICEX 3/4 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL 3/4 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 3/4 3/4 3/4 300 3/4 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 3/4 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb 3/4 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb 3/4 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 40 500 3/4 Output Admittance hoe 1.0 30 mS fT 250 3/4 MHz Delay Time td 3/4 15 ns Rise Time tr 3/4 20 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 3) DC Current Gain IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Ordering Information Notes: VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA (Note 4) Device Packaging Shipping MMBT4401-7 SOT-23 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4401-7-F. K2X YM Marking Information K2X = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30039 Rev. 6 - 2 2 of 4 www.diodes.com MMBT4401 1000 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 TA = 125C 100 TA = -25C TA = +25C 10 50 VCE = 1.0V 0 0 25 50 75 100 125 150 175 1 200 0.1 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs Ambient Temperature 2.0 CAPACITANCE (pF) 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 Cibo 10 5.0 Cobo 1.0 0.1 1.0 10 50 1.8 1.6 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current IC = 30mA IC = 1mA IC = 10mA IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 REVERSE VOLTS (V) Fig. 3 Typical Capacitance DS30039 Rev. 6 - 2 1 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 3 of 4 www.diodes.com MMBT4401 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 0.1 TA = -50C 0 10 1 1000 100 VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 0.5 VCE = 5V 0.9 TA = -50C 0.8 0.7 TA = 25C 0.6 0.5 TA = 150C 0.4 0.3 0.2 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30039 Rev. 6 - 2 4 of 4 www.diodes.com MMBT4401