DMP4065S
Document number: DS37646 Rev. 2 - 2
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February 2015
© Diodes Incorporated
DMP4065S
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
ID max
TA = 25°C
-40V
80mΩ @ VGS = -10V
-3.4A
100mΩ @ VGS = -4.5V
-3.0A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
SOT23
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP4065S-7
SOT23
3,000/Tape & Reel
DMP4065S-13
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Internal Schematic
Top View
D
GS
P65 = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: B = 2014)
M = Month (ex: 9 = September)
D
S
G
P65
YM
DMP4065S
Document number: DS37646 Rev. 2 - 2
2 of 6
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February 2015
© Diodes Incorporated
DMP4065S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-2.4
-1.9
A
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.4
-2.7
A
Pulsed Drain Current
IDM
-20
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
0.72
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
RθJA
171
°C/W
Power Dissipation (Note 6)
PD
1.4
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
RθJA
90
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-40
-
-
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-
-
-1.0
μA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
-
64
85
80
100
mΩ
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -3.3A
Diode Forward Voltage
VSD
-
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
-
587
-
pF
VDS = -20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
88
-
pF
Reverse Transfer Capacitance
Crss
-
40
-
pF
Gate Resistance
Rg
-
4
-
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
-
6.1
-
nC
VDS = -20V, ID = -4.2A
Total Gate Charge (VGS = -10V)
Qg
-
12.2
-
nC
Gate-Source Charge
Qgs
-
1.8
-
nC
Gate-Drain Charge
Qgd
-
2.4
-
nC
Turn-On Delay Time
tD(on)
-
3.6
-
ns
VDD = -15V, VGS = -10V,
ID = -1.0A, RG = 6Ω
Turn-On Rise Time
tr
-
2.9
-
ns
Turn-Off Delay Time
tD(off)
-
36.3
-
ns
Turn-Off Fall Time
tf
-
15.3
-
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP4065S
Document number: DS37646 Rev. 2 - 2
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© Diodes Incorporated
DMP4065S
0
3
6
9
12
15
0 1 2 3 4 5
Figure 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
Vgs = -5.0V
Vgs = -10.0V
Vgs = -3.5V
Vgs = -3.0V
Vgs = -2.5V
Vgs = -2.0V
0
3
6
9
12
15
0 1 2 3 4 5
I , DRAIN CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
T =-55°C
A
T =25°C
A
T =150°C
A
T =125°C
A
T =85°C
A
V = -5V
DS
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 2 4 6 8 10 12 14 16 18 20
V = -4.5
GS
V = -10V
GS
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON), Ω
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 2 4 6 8 10 12 14 16 18 20
I , Reverse Leakage Current ( )
RΩ
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
ID = -4.2A
ID = -3.3A
V = -4.5V
DS
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 3 6 9 12 15
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON) Ω
I , DRAIN-CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
T =-55°C
A
T =25°C
A
T =85°C
A
T =125°C
A
T =150°C
A
V = -4.5V
GS
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
R , DRAIN-SOURCE
DS(ON)
ON-RESISTANCE (NORMALIZED)
T , JUNCTION TEMPERATURE ( C)
J°
Figure 6 On-Resistance Variation with Temperature
V = -5V
GS
I = -5A
D
V = -10V
GS
I = -10A
D
DMP4065S
Document number: DS37646 Rev. 2 - 2
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DMP4065S
0
0.03
0.06
0.09
0.12
0.15
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J°
Figure 7 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON) Ω
V = -5.0V
GS
I = -5.0A
D
V = -10V
GS
I = -10A
D
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 8 Gate Threshold Variation vs.
Junction Temperature
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
I = -1mA
D
I = -250µA
D
0
3
6
9
12
15
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (A)
S
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
0 5 10 15 20 25 30 35 40
f = 1MHz
C , JUNCTION CAPACITANCE (pF)
T
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
Ciss
Coss
Crss
0
2
4
6
8
10
0 2 4 6 8 10 12
V = -20V
DS
I = -4.2A
D
V GATE THRESHOLD VOLTAGE (V)
GS
Q , TOTAL GATE CHARGE (nC)
gFigure 11 Gate Charge
0.001
0.01
0.1
1
10
100
0.1 1 10 100
RDS(on)
Limited
P = DC
W
P = 100µs
W
P = 10s
WP = 1s
W
P = 100ms
W
P = 10ms
WP = 1ms
W
-I , DRAIN CURRENT (A)
D
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Area
T = 150°C
J(max)
T = 25°C
A
V = 10V
GS
Single Pulse
DUT on 1 * MRP Board
DMP4065S
Document number: DS37646 Rev. 2 - 2
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© Diodes Incorporated
DMP4065S
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
R (t) = r(t) * R
JA JA
R = 173°C/W
JA
Duty Cycle, D = t1/ t2
D = 0.9
D = 0.7
D = Single Pulse
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
8°
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
XE
Y
C
Z
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
DMP4065S
Document number: DS37646 Rev. 2 - 2
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February 2015
© Diodes Incorporated
DMP4065S
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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