Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, V GS @ 5.0 V 1. 5
ID @ Tc = 100°C Continuous Drain Current, VGS @ 5.0 V 0.93
IDM Pulsed Drain Current 12
PD @Tc = 25°C Power Dissipation 3. 1
PD @TA = 25°C Power Dissipation (PCB Mount)** 2..0 W
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)** 0.017 W/°C
VGS Gate-to-Source Voltage -/+10 V
EAS Single Pulse Avalanche Energy 50 mJ
IAR Avalanche Current1.5 A
EAR Repetitive Avalanche Energy0.31 mJ
dv/d t Peak Diode Recovery dv/dt 5.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
IRLL110
HEXFET® Power MOSFET
PD - 90869A
S
D
G
VDSS = 100V
RDS(on) = 0.54Ω
ID = 1.5A
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
1/27/99
Description
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lRepetitive Avalanche Rated
lLogic-Level Gate Drive
lRDS(on)Specified at VGS= 4V & 5V
lFast Switching
SOT-223
** When mounted on 1'' square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter Typ. Max. Units
RθJC Junction-to-PCB ––– 40
RθJA Junction-to-Ambient. (PCB Mount)** ––– 60
Thermal Resistance
°C/W
Absolute Maximum Ratings
A
www.irf.com 1
Soldewring Temperature, for 10 seconds 300 (1.6mm from case)
IRLL110
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.54 VGS = 5.0V, ID = 0.90A
––– ––– 0.76 ΩVGS = 4.0V, ID = 0.75A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 0.57 ––– ––– S VDS = 25V , ID = 0.90 A
––– ––– 25 µA VDS = 100V , VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
QgTotal Gate Charge ––– ––– 6.1 ID = 5.6A
Qgs Gate-to-Source Charge ––– ––– 2.6 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 3.3 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 9.3 ––– VDD = 50V
trRise Time ––– 47 ––– ns ID = 5.6A
td(off) Turn-Off Delay Time ––– 16 ––– RG = 12 Ω
tf Fall Time ––– 18 ––– RD = 8.4 Ω,
nH
Ciss Input Capacitance ––– 250 ––– VGS = 0V
Coss Output Capacitance ––– 80 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance –– – 1 5 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤5.6A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD=25V, starting TJ = 25°C, L = 25 mH
RG = 25Ω, IAS = 1.5A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 1.5A, VGS = 0V
trr Reverse Recovery Time –– – 11 0 13 0 ns TJ = 25°C, IF = 5.6A
Qrr Reverse RecoveryCharge ––– 0.50 0.65 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
––– ––– 12
1.5 A
S
D
G
Between lead, 6mm(0.25in)
from package and center
of die contact.
LSInternal Source Inductance
Internal Drain Inductance
LD––– 4.0 –––
––– 6.0 –––
Source-Drain Ratings and Characteristics
IRLL110
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IRLL110
4www.irf.com
IRLL110
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IRLL110
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IRLL110
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Package Outline
SOT-223 (TO-261AA) Outline
SOT-223
Part Marking Information
DATE CODE (YW W)
Y = LAST D IGIT OF THE YE AR
WW = WEEK BOTTOM
PA RT NU MBE R
TOP
INTERNATIONAL
R EC T IFIER
L OGO
E X AM P LE : TH IS IS A N IRF L0 1 4
WAF E R
L OT C OD E
XXXXXX
314
FL014
IRLL110
8www.irf.com
SOT-223 Outline
Tape & Reel Information
4.10 (.161)
3.90 (.154) 1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
T Y P .
7.55 (.297)
7.45 (.294) 7.60 (.299)
7.40 (.292)
2.30 (.0 90)
2.10 (.0 83)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTIO N
TR
13.20 (.51 9)
12.80 (.50 4)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOT ES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. O UT LIN E C O NF O R M S TO EIA-481 & E IA-541.
3. EA CH O 330.00 (13.00) REE L CONTA INS 2,500 D EVICE S.
3
NOTES :
1. O UT LINE C O M FO R MS TO E IA -418-1.
2. CO NTRO LLING DIMENSION: MILLIM ETER..
3. DIMENSION MEASURED @ HU B.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
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IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 1/99
