SILICON TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 28A1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES @ High Voltage : Vceo = -400 V High Speed : tr $0.7 us @ Complement to 2SC3631-Z QUALITY GRADE Standard Please referto Quality grade on NEC Semiconductor Devices (Document number IE!-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voitage Veso ~400 Vv Collector to Emitter Voltage Veeo -400 v Emitter to Base Voltage Veso -7 v Cotlector Current (DC) Ic -2.0 A Collector Current {(Pulse)* lc -4.0 A Tota! Power Dissipation (Ts = 25 C}** Pr 2.0 Ww Junction Temperature Ti 150 ao Storage Temperature Tstg ~55 to +150 C * PW $ 10 ms, Duty Cycie $ 50 % ** When mounted on ceramic substrate of 7.5 cm? x 0.7 mm PACKAGE DIMENSIONS {in millimeters) 4 1. Base inp a 2. Collector 3. Emitter 4. Collector Document No. TC-1635A {(0.D. No. TC-5906) Date Published December 1993 M Printed in Japan NEC Corporation 1985194 NEC 2SA1412-Z ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. Typ. MAX. UNIT TEST CONDITIONS Collector Cutoff Current Icso -10 LA Vea = ~ Emitter Cutoff Current fee ~10 HA Veg = ~6.0 V, DC Current Gain nees* 40 60 120 Vee=~5.0V. los -GTA DC Current Gain hre2* 10 22 Vee = -5.0 V. lo = -10A Collector Saturation Voltage Veckisan -0.25 -0.5 Vv toe -O.5 A, le = -O.7A Base Saturation Voltage Veesar ~0.85 -1.2 Vv fe=-O5 A, lg = -O1A4 Gain Bandwidth Product fr 40 MHz Vee = -10 V, lk = -100 mA Output Capacitance Cob 30 pF Vee = ~10 V, ie = 0, f= 1.0 MHz Turn-on Time ton. 0.03 0.5 BS lee -1.0A, R= 1500 Storage Time tstg 14 | 2.0 us Ipy = ~1az = ~0.2 A, Fall time tr 01 | 07 ps | Wee 7150 * Pulsed: PW 350 us, Duty Cycle 2 % hre Ciassification MARKING t K heer 40 to 80 60 to 120 TYPICAL CHARACTERISTICS (Ta = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE SAFE OPERATING AREA ~10 s 5.0 1 s < 120 g gE -10 5 05 a oO B s 3 3 0? & = 3 - 6 70.1 3 (ith 25 1 0.05 rary; & 1: amic Subsirg mm a ha 0.02 0.01 0 50 300 150 200 -10 -10 ~100 ~1 080 Ta ~ Ambient Temperature -- C Vict ~ Collector to Emitter Voltage - V COLLECTOR CURRENT vs. REVEASE BIAS SAFE OPERATING AREA COLLECTOR TO EMITTER VOLTAGE -2.5 T | << ~2.0 << { 5-15 3 3 G 5 g 8 8 -1.0 8 ~ 3 - Ao ra > 8 F J & OS ae 9 100 ~200 -300 -400 ~600 0 -1.0 ~2.0 -3.0 Ac -5.0 Vee - Collector to Emitter Voltage - V Vcr - Collector to Emitter Voltage - V0 ~100 = -200 -300 400 ~500 Vce ~ Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT Vez = -5.0V hre ~ DC Current Gain 1 0.002 ~-0.005-0.01-0.02 -0.05 ~-0.1 -02 -O5 -1.0 -20 lc - Collector Current ~ A TURN-OFF TIME vs. COLLECTOR CURRENT t~- Switching Time - us , 6.05 -0.1 +02 O05 -1.0 -2.0 10 - Collector Current -A Veersat ~ Collector Saturation Voltage - V Vaeisss ~ Base Saturation Voltage - V NEC 2SA1412-Z COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 1.0 =-50 7100 as t < 03 1 ne 5 7150 HA e 04 Ss 8 100 uA 3 -0.03 g 8 3 > 0.01 = ig = -60 2 0.003 0 ~0.2 -04 0.6 -08 -1.0 -1.2 -14 -1.6 Vee Base to Emitter Voltage - V COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT a o kfe = 5 0.01 ~0,002 -0.005-0.01-0.02 -0.05 -01 02 -05 ~10 -20 tc - Collector Current - A