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MS2553C
35 Watts, 50 Volts
Pulsed Avionics 1025 to 1150 MHz
GENERAL DESCRIPTION
The MS2553C is a medium power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest MTTF.
The transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
M220
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (Pd) 175 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 4.0 A
Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
BVEBO Emitter - Base Breakdown Ie = 10mA 3.5 V
BVCBO Collector - Base Breakdown Ic = 20mA 65 V
BVCEO Collector - Emitter Breakdown Ic = 20mA 25 V
hFE DC Current Gain Ic = 500mA, Vce = 5V 20 -
θjc1,2 Thermal Resistance 0.5 °C/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vcc = 50V
POUT Power Out 35 W
PIN Power Input 3.2 W
GpPower Gain 10.5 dB
ηCCollector Efficiency 40 %
PdPulse Droop 1 dB
Load Mismatch
F = 1025/1090/1150 MHz,
PW = 10µsec, DF = 1%,
PIN = 3.2W
10:1 -
NOTES: 1. At rated output power and pulse conditions
2. Pulse Format: PW=10µs, DF=1%
Rev. A May. 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS2553C
Typical Performance (1025MHz ~ 1150MHz)
Efficiency @ Pin=3.2W
30.0%
35.0%
40.0%
45.0%
50.0%
55.0%
60.0%
1010 1030 1050 1070 1090 1110 1130 1150
Frequency(MHz)
Efficiency (%)
Input Return Loss @ Pin=3.2W
-18.00
-16.00
-14.00
-12.00
-10.00
-8.00
-6.00
-4.00
1010 1030 1050 1070 1090 1110 1130 1150
Frequency (MHz)
Input Return Loss (dB)
MS2553C Gain @ Pin=3.2W
10.00
10.50
11.00
11.50
12.00
12.50
13.00
1010 1030 1050 1070 1090 1110 1130 1150
Frequency (MHz)
Gain (dB)
Pout @ Pin=3.2W
30.0
35.0
40.0
45.0
50.0
55.0
60.0
1010 1030 1050 1070 1090 1110 1130 1150
Frequency (MHz)
Pout (W)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS2553C
MS2553C Test Circuit Layout
MS2553C Test Circuit Component Designations and Values
Part Description Part Description
C1, C2 100pF Chip Capacitor (ATC 100B) C3, C4 .35-3.5pF Johanson Capacitor,
JMC5801
C5 220uF 63V Electrolytic Capacitor L1, L2 4 Turns, 20 AWG, IDIA 0.092?î
M1 67 x 1596 mils (W x L) M2 156 x 54 mils (W x L)
M3 955 x 335 mils (W x L) M4 240 x 398 mils (W x L)
M5 1224 x 294 mils (W x L) M6 180 x 134 mils (W x L)
M7 67 x 342 mils (W x L) M8 788 x 216 mils (W x L)
M9 67 x 551 mils (W x L) PCB Rogers RO4350, e’
r=3.48, 30mils, 1oz
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS2553C
Typical Impedance Values
DUT
ZSZL
Frequency (MHz) ZS(?S) ZL(?S)
1025 6.3 j15.4 6.6 + j2.0
1090 5.6 j14.5 7.6 + j2.6
1150 5.1 j13.8 8.6 + j2.7
* VCC = 50V, PIN = 3.2W
* Pulse Format: 10µs, 1% Long Term Duty Factor
Input
Matching
Network
Output
Matching
Network
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS2553C
Package Mechanical Data
< Package Style: M220 >
DIMENSION
MINIMUM
INCHES/MM MAXIMUM
INCHES/MM MINIMUM
INCHES/MM MAXIMUM
INCHES/MM
A .100 / 2.54 B 1.050 / 26.67 -
C .250 / 6.35 D - .210 / 5.33
E .120 / 3.05 .130 / 3.30 F .062 / 1.58
G .562 / 14.28 H - .285 / 7.24
I .800 / 20.32 J .003 / 0.08 .006 / 0.15
PIN CONNECTION
1 COLLECTOR 2 EMITTER
3 BASE 4 BASE