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MS2553C
35 Watts, 50 Volts
Pulsed Avionics 1025 to 1150 MHz
GENERAL DESCRIPTION
The MS2553C is a medium power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest MTTF.
The transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
M220
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (Pd) 175 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 4.0 A
Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
BVEBO Emitter - Base Breakdown Ie = 10mA 3.5 V
BVCBO Collector - Base Breakdown Ic = 20mA 65 V
BVCEO Collector - Emitter Breakdown Ic = 20mA 25 V
hFE DC – Current Gain Ic = 500mA, Vce = 5V 20 -
θjc1,2 Thermal Resistance 0.5 °C/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vcc = 50V
POUT Power Out 35 W
PIN Power Input 3.2 W
GpPower Gain 10.5 dB
ηCCollector Efficiency 40 %
PdPulse Droop 1 dB
?á Load Mismatch
F = 1025/1090/1150 MHz,
PW = 10µsec, DF = 1%,
PIN = 3.2W
10:1 -
NOTES: 1. At rated output power and pulse conditions
2. Pulse Format: PW=10µs, DF=1%
Rev. A – May. 2008