MIL SPECS cf oooo1es ooouss s NOTICE OF MIL-S~-19500/272C VALIDATION NOTICE 1 5 February 1988 MILITARY SPECIFICATION Semiconductor Device, Diode, Silicon, Voltage-Regulator Type (TX and NON-TX) 1N3993A through 1N4000A and the RA MIL-S-19500/272C and Amendment 5 dated 28 January 1980, have been reviewed and determined to be valid for use in acquisition. Custodian: Preparing Activity: ' Army-ER Army-ER Navy-Ec Air Force-17 Agent: DLA-ES Review Activities: Army-AR, MI Air Force - 11, 19, 99 NASA - NA DLA-ES User Activities: Army - SM Navy - AS, CG, MC, OS, SH AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL SPECS IC oodoles Goose MIL-S-19500/272C AMENDMENT 5 28 January 1980 UPERSEDING AMENDMENT 4 30 April 1975 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, OIODE, SILICON, VOLTAGE-REGULATOR TYPES (TX AND NON-TX) 1N3993A THROUGH 1N4000A AND THE RA This amendment forms a part of Military Specification MIL-S-19500/272C, dated 26 November 1968, and is approved for use by all Deparments and Agencies of the Department of Defense. PAGE 4 4.2, delete and substitute: "4.2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tables 1, II, and ITT. Qualification for a voltage group shall require testing of the highest and lowest nominal voltage units in the group. Ten samples of each intermediate type shall be subjected to subgroup 2 of group A and subgroup 1 of group C. The manufacturer has the option of submitting samples individually to subgroups 4 and 5 of group B, and subgroups 4 and of group C inspection or of submitting to the tightened combination of these tests using a sample size under the a = 7 column (see table C-I, appendix C, MIL-C-19500) and a test duration of 1,000 hours. Qualification inspection of device types of either polarity in the above tests is sufficient to obtain qualification approval of device types of both polarities providing that structural similarity can be demonstrated." 4.7.5, delete and substitute: "4.7.5 Breakdown voltage. The I7 test current (column 5 of table IV) shall be applied until thermal equilibrium is attained prior to reading the -breakdown voltage. During this test, the case temperature (Tc) of the diode shall be equal to 30 #3 C." PAGE 8 TABLE V, Burn-in test measurements, Reverse current, in Unit column: Delete "Adc" and substitute pAdc". PAGE il * 4.9.7.2: Delete aZ = 10% of initial value. and substitute az = 10% of column 6 of Table IV." NOTE: The margin of this amendment is marked with an asterisk to indicate where the change from the previous amendment was made. This was done as a convenience only and the Government assumes no liability whatsoever for any jnaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous amendment.MIL SPECS Ic OHO001e5 0001593 4 | HIL-S-19500/272C AVENDEENT 9 Custodians: Preparing activity: Army - ER Army ER Navy - EC Air Force - 17 Agent: DLA - ES Review activities: Army - AR, MI (Project 5961-0756) Air Force - 11, 19, 99 NASA - NA DLA - ES User activities: Army - SM Navy - AS, CG, MC, 05, SH 2U.S. GOVERNMENT PRINTING OFFICE: 1980603-121/1001 Page 2 of 2MIL SPECS Ic o0001e5 0001594 0 a MIL-S-19500/272C 26 November 1968 SUPERSEDING MIL -S-19500/272B 20 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REGULATOR TYPES (TX AND NON-TX) 1N3993A THROUGH 1N4000A AND THE RA This specification is mandatory for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, 10 watt, voltage- regulator diodes with the following ratings and characteristics. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening tests specified in 4.9 through 4.9.7.3. 1.2 Forward (suffix A) and reverse (suffix RA) types. Forward and reverse types are identical except: the forward (A) types have the cathode connected to the stud; the reverse (RA) types have the anode connected to the stud (see 3.5.2). Designated values are applicable to both types. 1.3 Physical dimensions. See figure 1. 1.4 Ratings and characteristics. Py 1/ BV BV regulation To = C iy (surge) Volts Volts Ww a 8.9 to 7.5 (See column 9 of 10 (See column 10 of (See column 2 of table IV) table IV) table IV) 1/ Derate at 100 mW/C above Tc = 75C. OPERATING CASE TEMPERATURE: -65C to +150C STORAGE TEMPERATURE: -65C to +175C 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein. SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices. General Specification for. FSC 5961MIL SPECS ICP Oo0o1e2s oo01s5s 2 MIL-S-19500/272C STANDARDS MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of specifications, standards, drawings, and publications required by suppliers in connec- tion with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer. ) 2.2 Other publications. The following document forms a part of the specification to the extent Specified herein. Unless otherwise indicated, the issue in effect on date of invitation for bids or request for proposal shall apply. NATIONAL BUREAU OF STANDARDS Handbook H28 - Screw-Thread Standards for Federal Services. (Application for copies should be addressed to the Superintendent of Documents, Government Printing Office. Washington, D.C. 20402. ) 3. REQUIREMENTS 3.1 General. Requirements shall be in accordance with MIL-S-19500. and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500. 3.3 Design, construction, and physical dimensions. Diodes shall be of the design, construction. and physical dimensions specified in figure 1. 3.4 Performance characteristics. Performance characteristics shall be as specified in tables I, . and It. 3.4.1 Process-conditioning, testing, and screening for "TX" types. Process-conditioning, testing, and screening for the "TX" types shall be as specified in 4. 9. 3.5 Marking. The following marking specified in MIL-S-19500 may be omitted at the option of the manufacturer: (a) Manufacturer's identification (b) Country of origin. 3.5.1 '"TX" types. Devices in accordance with the requirements for the "TX" type (see 4.9) shall be marked with a "TX" preceding the applicable type designation. 3.5.2 Polarity. Forward (A) types shall have the cathode connected to the stud Reverse (RA) types shall have the anode connected to the stud and shall be marked witha "'R" following the last digit in the type number 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL -S-19500, and as specified herein, except that a lot accumulation period requirements shall be six months in lieu of six weeks.MIL SPECS 1cfoooo1es Coouss 4 & MIL-S-19500/272C ! | 3. tf 7 f_ c DIA FE -@ - }-- H--- +-- i yo PY i j SEE SEE NOTE | NOTE @ =D we A we E _ SEATING PLANE DIMENSIONS N LTRL__INCHES MILLIMETERS r MIN | MAX | MIN | MAX | A jc" 405 7774.10.29 B | --- | .424 | --- | 10.77 Cc | .424 [| .437 | 10.77 [ 11.10 dD | .o75 | .175 | 1.90 | 4.44 E { --- 800 ~- | 20.32 F | -- | .250 [|---| 6.35 | 7 G | .060 ~--- 1.52 | - H | .060 --- 1,52 --- J | .422 | .453 | 10.72 | 11.51 K | --[ --- 7 ---] --- B,4, 5, 6 NOTES: . ONO fe W AD owt eee . ae based upon ? inch = 25.4 mm. Angular orientation of this terminal is undefined. Dio of unthreaded portion .189 inch (4.80 mm) max; .163 inch (4.14 mm) min. The A.S.A. thread reference is 10-32 UNF2A. Max pitch dia of plated threads shall be basic pitch dio .169 inch (4.31 mm) and in accordance with Handbook H28. Unit shall not be damaged by torque of 15 Ib-in opplied to 10-32NF2B nut assembled on thread. Complete threads shall extend to within 2-1/2 threads of the seating plane. Terminal end shape is unrestricted. For marking requirements see 3,5. Metric equivalents (to the nearest .01 mm) are given for general information only and are FIGURE 1. Semiconductor devices, dicde, types (TX and Non-TX) 1N3993A thru IN4000A and the reverse types (RA suffix).MIL SPECS rc cooo1es on01s97 & MIL-S-19500/272C 4.2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tables I, I. and MI. Qualification for a voltage group shall require testing of the high- est and lowest nominal voltage units in the group. (The forward and reverse polarity types shall not be considered structurally similar for qualification inspection.) Ten samples of each interme- diate type shall be subjected to subgroup 2 of group A and subgroup 1 of group C. The manufacturer has the option of submitting samples individually to subgroups 4 and 5 of group B and subgroups 4 and 5 of group C inspection or of submitting to the tightened combination of these tests using a sample size under the A = 7 column and a test duration of 1. 000 hours. 4.2.1 Qualification testing. The non-TX types shall be used for qualification testing. Upon request to the qualifying activity. qualification will be extended to include the "TX" type of device. 4.3 Quality conformance inspection. Quality conformance inspection shall consist of the exam- inations and tests specified in groups A, B, and C. Group A inspection and subgroup 1 of group C inspection shall be performed on an inspection sublot of each type. Subgroups 4 and 5 of group B inspection and subgroups 4 and 5 of group C inspection shall be performed on an inspection lot with 50 percent of the sample being selected from the highest-voltage type present in the lot and 50 per - cent of the sample being selected from the highest-volume type present in the lot, Subsequent ac- ceptance of voltage types within a group which are higher than those previously subjected to 1, 000- hour life testing within the current six-month period (see 4.6) requires retesting of subgroups 4 and 5 of group C inspection for a lot which includes the higher voltage type. Provisions of MIL-S-19500 early acceptance procedures do not apply to this specification. 4.3.1 Inspection data. When specified in the contract or order one copy of the quality confor - mance inspection data, pertinent to the device inspection lot. shall be supplied with each shipment (see 6.2). 4.4 Group A inspection. Group A inspection shall consist of the examinations and tests specified in table I. "4.5 Group B inspection. Group B inspection shall consist of the examinations and tests specified in table II. 4.6 Group C inspection. Group C inspection shall consist of the examinations and tests specified in table III. This inspection shall be conducted on the initial lot, and thereafter every six months during production. 4.7 Methods of examination and test. Methods of examination and test shall be as specified in tables I, II, and IIJ, and as follows: 4.7.1 Surge current i,(surge). The currents specified in column 10 of table IV shall be applied in the reverse direction and shall be superimposed on the current (Iz, = column 5 of table IV) a total of five surges at 1 minute intervals. Each individual surge shall be a 1/2~square-wave pulse of 1/120-second duration or an equivalent 1/2-sine wave with the same effective (rms) current. 4.7.2 Voltage regulation (ABV). A current at 10 percent of Iz (column 8) shall be maintained for a period of 90 +5 seconds, and the BV shall be noted. The current shall then be increased to a level of 50 percent of Iz (column 8) and maintained at this level for a period of time equal to 90 +5 seconds at which time the voltage change shali not exceed column 9 of table IV. During this test, the case temperature (Tc) of the diode shal) be equal to 30 23C. 4.7.3 Time limit for end points. End-point tests for qualification and quality conformance in- spection shall be completed within 96 hours after completion of the last test in the subgroup. 4.17.4 Temperature coefficient of breakdown voltage (TCBV). The device shall be temperature stabilized with current applied prior to reading breakdown voltage atthe specified case temperature. 4.7.5 Breakdown voltage. The test current (column 5 of table IV) shall be applied for 90 +5 sec- onds prior to reading the breakdown voltage. During this test, the case temperature (Tc) of the diode shall be equal to 30 +3C. 4.8 Test ratings. Test ratings for the diodes covered by this specification shall be as indicated in table IV. 4MIL SPECS Tcf oooo12s coos 4 & MIL-S-19500/272C TABLE I. Group A inspection ) MIL-STD-750 LTPD Limits Examination or test T Non Unit Method ! Details Tx ix} Symbol | Min Max Subgroup 1 | 5 Visual and mechanical 2071 --- --- ero | --- examination Subgroup 2 5 | 3 Forward voltage 4011 | Ip= 2.0 Adc VP --- 1.5 | Vde Reverse current 4016 DC method; Vp = Col. 11 IR --- {Col.12) Adc , of table IV . lof table IV Breakdown voltage 4022 | Iz = Col. 5 of table IV BV |Col. 3 |Col. 4; Vde (see 4.7.5) of tablejof table IV IV Small-signal breakdown 4051 Iz, = Col. 5 of table IV; Zz --- {Col. 6{ ohms impedance Isig = 10% Iz of table IV Knee impedance 4051 | Ix =1.0 mAdc; ZK --- [Col. 7) ohms Isig = 10% Ix of table IV TABLE II. Group B inspection MIL-STD-750 LTPD Limits Examination or test No Method Details Tx x! Symbol | Min | Max | Unit Subgroup 1 t 10] 10 Physical dimensions 2066 (See figure 1) wee fb oaee | nee | ee Subgroup 2 10/10 Solderability 2026 | Depth to cover full flat of { wee wee | nee | eee ; terminal; Dwell time 10 +1 sec : Thermal shock (temperature 1051 Test cond. C; i --- wee | wee | oe cycling) i 7 (high) = 175C Thermal shock (glass strain) 1056 Test cond. A : w+ --- --- | --- Terminal strength: 2036 Tension (lead) | Test cond. A; 20 lbs; : --- w-- | --- | --- t= 15 +3 sec . Torque (terminal) { Test cond. Dy; 10 oz-in; --- --- cre pene | t=15 43 sec : Torque (stud) Test cond. Dg; 15 lbs-in; . --- os es t= 1543 sec Bending stress (lead) { Test cond. F; 3 Ibs; 1 nee we | --- | --- > t=15 +38 sec ; Seal 1071 Fine leak: Test cond. Gor H; oo: --- woe | nee Gross leak: Test cond. FMIL MIL-S-19500/272C SPECS Icff cooo1es 0001599 T & TABLE II. Group B inspection - Continued im | MIL-STD-750 LTPD Limits | Examination or tes: I Non! | Unit i | Method ; Details Tx [rx] Symbol | Min | Max Subgroup 2 - Continued Moisture resistance 1021 Omit initial conditioning --- --- on- f one End points: (See 4.7.3.) \ . Breakdown voltage 4022 Iz, = Col. 5 of table IV BV Col. 3 | Col. 41 Vde (see 4.7.5) of table jof tabla IV IV Reverse current 4016 | DC method; Vp = Col. 11 IR --- {Col.12] pwAde of table IV of table | IV ' ! Small-signal breakdown 4051 Iz, = Col. 5 of table IV ' Zz --- {Col.6 | ohms impedance Isig = 10% Iz, lof table IV Subgroup 3 10 10 Shock 2016 , Nonoperating; 1,500 G: --- t = 0.5 msec: 5 blows in each orientation: Xj, Yj. and Y9 Vibration, variable frequency | 2056 ' Nonoperating wen --- --- |--- (nonoperating) Constant acceleration 2006 Nonoperating: 10 000 G: --- --- w-- [--- X1. Yi. and Y2 orientations End points: (Same as subgroup 2) ; Subgroup 4 10 7 t High-temperature life 1031 Ta = 175C; t = 500 hours --- --- --- |--- (nonoperating) End points: (See 4.7.3.) Breakdown voltage 4022 Iz = Col. 5 of table IV BV Col. 3 |Col. 44 Vde (see 4.7.5) of tablelof table IV IV Reverse current 4016 |DC method: VR = Col. 11 IR --- jCol.13] pAde of table IV of table IV Smali-signal breakdown 4051 Iz = Col. 5 of table IV: a --- |Col. 6] ohms impedance Isig = 10% Iz, of table IV Subgroup 5 10 7 Steady-state operation life 1026 Iz = Col. 15 of table IV: --- o-- on-- | --- Tc - 150C; t = 500 hours End points: (Same as subgroup 4) i 1MIL SPECS TCP ooo0125 ooo1L00 2 & TABLE II. Group C inspection MIL-S-19500/272C I | MIL-STD-750 LTPD Limits Examination or test f Nont 1 Unit Method | Details Tx Itx | Symbol | Min | Max Subgroup 1 10; 5 Temperature coefficient 4071 | Iz = Col. 5 of table IV; TCBV --- [Col.14/%/C (see 4.7.4) Tco1 = 30C; of table Tog = 125C | IV Voltage regulation ooo A BV --- Col. 9| Vde (see 4.7.2) : of table ' IV Subgroup 2 10 5 Surge current (see 4.7.1) 4066 | i, (surge) = Col. 10 of --- --- --- | --- table IV End points: (See 4.7.3.) J Breakdown voltage 4022 | Iz = Col. 5 of table IV BV |Col. 3 | Col. 4} Vdc (see 4.7.5) of table pf table IV IV Reverse current 4016 | DC method; VR = Col. 11 IR e-- Col.12] uAdc of table IV of table IV Small-signal breakdown 4051 | Iz =Col. 5 of table IV; Zz --- |Col. 6} ohms impedance Isig = 10 percent Iz of table Iv Subgroup 3 10 10 Salt atmosphere 1041 t oo cen won pene Subgroup 4 A=15 A=10 High-temperature life 1031 | Ta = 175C --- wee | --- | --- (nonoperating) End points: (See 4.7.3.) Breakdown voltage 4022 | Iz = Col. 5 of table IV BV jCol. 3 |Col. 4{ Vdc (see 4.7.5) lof table|of table Iv IV Reverse current 4016 | DC method; VR = Col. 11 IR --- |1Col.13] wAde of table IV lof table IV Small-signal breakdown 4051 | Iz = Col. 5 of table IV; Z --- {Col. 6) ohms impedance Isig = 10% Iz lof table IV Subgroup 5 Dre15 = 10 Steady-state operation life 1026 Iz = Col. 15 of table IV; --- o-- --- | ~-- , | To = 150C End points: (Same as subgroup 4)MIL SPECS Ice OOOO1e5 OOOLEOL Y i MIL-S-19500/272C 4.9 Process-conditioning, testing, and screening for "TX'' types. The procedure for process- conditioning, testing, and screening the "TX" types shall be in accordance with 4.9.1 through 4.9.7.3 and figure 2, The process-conditioning shall be conducted on 100 percent of the lot, prior to submission of the lot to the tests specified in tables I, I, and I. (At the option of the manufac- turer, the non-TX types may be subjected to process-conditioning and testing. } 4.9.1 Quality assurance (lot verification). Quality assurance shall keep lot records for three years minimum, monitor for compliance to the prescribed procedures, and observe that satisfac- tory manufacturing conditions and records on lots are maintained for these devices. The records shall be available for review by the customer at all times. The quality-assurance monitoring shall include, but not be limited to: process-conditioning, testing, and screening. (The conditioning and screening tests performed as standard-production tests need not be repeated when these are pre- designated and acceptable to the Government as being equal to or more severe than specified herein and the relative process-conditioning sequence is maintained. ) 4.9.2 High-temperature storage. All devices shall be stored for at least 48 hours at a minimum temperature (Fal of 175C. ; 4.9.3 Thermal shock (temperature cycling). Temperature cycling shall be in accordance with MIL-STD-750, Method 1051, test condition C, except that the high temperature shall be 175C. This test may be started at any point in the cycle. All devices shall be maintained at each end temperature until thermal equilibrium has been reached but for not less than 15 minutes. All devices may be maintained at room ambient temperature for not more than 5 minutes between each period at the end temperature. 4.9.4 Acceleration. All devices shall be subjected to acceleration fest in accordance with MIL-STD-750, Method 2006, with the following exceptions: The test shall be performed one-time in the Yj orientation only, at a peak level of 10,000 G minimum. The one-minute hold-time re- quirement shall not apply. 4.9.5 Hermetic seal (fine-leak) test. All devices shall be fine-leak tested in accordance with MIL-STD-750, Method 1071, test condition G or H. 4.9.6 Hermetic seal (gross -leak) test. All devices shall be tested in accordance with MIL-STD-750, Method 1071, test condition F. All devices that bubble shall be removed from the lot. 4.9.7 Pre burn-in tests. The parameters BV. IR. and Z of table V shall be measured and the data recorded for all devices in the lot. All devices shall be handled or identified such that the delta end points can be determined after the burn-in test. All devices which fail to meet these re- quirements initially will be removed from the inspection lot and the quantity removed noted on the lot history. TABLE V. Burn-in test measurements Examinati test MIL-STD-750 i Limits Unit amination or test | Method Details | Symbol | Min Max nm Breakdown voltage 4022 Iz, = Col 5 of table IV BV Col. 3 of | Col. 4 of | Vdc table IV | table IV Reverse current 4016 DC method; . Ip wor Col.12 of | Adc VR = Col. 11 of table IV - ' table IV Small-signal break- 4051 Iz, = Col. 5 of table IV; Zz i vo- Col. 6 of | ohms down impedance Isig = 10% Iz, i table IVrc gooo12s doo1oe b & MIL SPECS MIL-S-19500/272C O1e 190 + 02 OT o'e 9 gy" pel 0sz e"l cee eg-h | Zin] Sk | VOOOPNT Ose LGO + 0z oT 0% L Bh" OFT 00S ZT OLE bIL | 99 | 89 | VEGGENT o8e SbO + 0z ol 0% L 9s" ZS 'T OOL It SOF 1s9 | 6gs| Z29 | V866eNT Or OF0 "+ 0% ol O't 8 09 89T 009 OT GbE ggs} zes| 9S | VLEGENT 09% O60 02 oT o'r 6 9 p8T oss tT O6P 96S | #8h| 1S | VO6GENT 00S S20 "+ OUT os o'r Or 89 00% 00s ZT oes PGF | Gb e | Lb | VS66ENT oss 00 0UZ 00t " 11 zw 0z2 OOF $*T 08g zsh | 80F! e'b | VP6GENT ot9 090 *- 00g O0T s" rat os" br? 007 0% 09 ots | one | 6e | VE66ENT var Do/% vi wi | six z STA Spy sunjo | smyo| yur Sioa | sion [Sioa PoOST =FL op op aseyqoa | 3 08=FL | YoneMBes| 5 62-1 | souepoduy | aoue| 206=9L quatayjya0o| |. a3ty0A pedun ; dno quaamo ame yaarma | Jarmo] asaaaay |] (ad.ms) quaaano aeuy _|-padwy}yuaamo sox} xem | uw | WON ino op XBW | La dway, ooo asIaaay a, iy Adv op Xe Mz z Zt AG AG Aa aSEqOA, 2y ATDL 1 uy Zy STIOD { FETOD | eLICD | ett9d | ited | oT ied 6199 | 8100 2109 | 9109] sto | rwoled|eZ19d] 1199 (ayjas yy) sedAy ssiaaai ay) pue YOOOPNI ysnoiyd YEG6GENL (XL-UON pue XL) sada*saporp 10j sduner3soy *AL ATAVLIc oo00125 0001603 8 i MIL SPECS MIL-S-19500/272C sad4] XL pue XL-uON 10; urerZeip sanpeooid jo Japig *Z TUNNLA NMOHS SV CHNYOANad Ad TIVHS SHOOTd AHL NI SLSAL FHL JO YaddOx Aqaatyad =} OJ uoljeredaig XL yaar 20 ydaoae 307 10; eyed 2 pue ' i q cy sdnozy }$9} UI-uaing woay syoafer | jo mataay uo paseq BltazyId uotpalar JOT fF a T . syolar Iayjo pues eyap auluUtrIajep 0} j 9 dnory Stlajoweied patyioads Jo Juawaaunsvayy q dnoiy v dnoary , ul-uing *Z ddL't sdajaweied patjtaads jo Juawiainseayy *T AJLIOA 0} S]SA, uorqzadsuy xSUTUOTIIPUOD AIMOg JU9II9Ig OOT , | qoofaa 10 } D2 dnory Aqaaljaqd ydaooe 107 \ q@ dnory sads], IOj . eyed 2 pue y dnory XL-uoN uoryeredaig q y sdnory AdLT Aytzaa 0} 103 jo MatAaYy s}SsaJ, uotyoedsu X.L-UON psesodorg s}07 $189} [ees Oljeawaey pP uoTyerapa2oy (Surpo4o aanyerzaduia}) yooys [eursrayL -Z aSes10js ainyeradura} ySty 1 ,SULUOLZIPUOD Ssad01g JWeo1ed OOT I sadfL XL 10 pasodoig sjo'7 : gurssa001d i; 3 (SutTeas) 10peq_ Z uolqeredg A[quiassy [eluszyeul MEY T yeulq 1aye paw.s0,7 ssa00id uolqonpoig sjO'T uoTyadsuy 10MIL SPECS ICM cooo1es Ooo1no4 T MIL-S-19500/272C 4.9.7.1 Burn-intest. Ali devices shall be operated for 96 hours minimum under the following steady state conditions: 150C. Col. 15 of table IV. Tc Iz 4.9.7.2 Post burn-in tests. The parameters BV, Ip, and Z of table V shall be retested after burn-in and the data recorded for all devices in the lot. The parameters measured may not change during the burn-in test from initial value by more than the specified amount as follows: ABV = +2% of initial value. AIR = 100% or 100 nAdc, whichever is greater. AZ = 10% of initial value. 4.9.7.3 Burn-in test failure (screening). All devices that exceed the delta (A) limits of para- graph 4.9.7.2 or the limits of those tests performed on table V shall be removed from the inspec- tion lot and the quantity removed shall be noted on the permanent lot history. Where the quantity removed after burn-in exceeds 10% of the total inspection lot on burn-in test, the entire lot shall be unacceptable. 5. PREPARATION FOR DELIVERY 5.1 Preparation for delivery. Preparation for delivery shall be in accordance with MIL-S-19500. 6. NOTES 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Ordering data. Inspection data (see 4.3.1). 6.3 Interchangeability criteria. The types covered herein are interchangeable with the devices covered by the superseded MIL-S-19500/272B. 6.4 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. Custodians: Preparing activity: Army - EL Army - EL Navy - EC . Air Force - 11 (Project 5961-0082-6) Review activities: Army - EL, MU Navy - SH Air Force - 11, 17. 85 DSA - ES User activities: Army - SM, MI Navy - CG, MC, WP, AS. OS Air Force - 19 11