{yz SGS-THOMSO Y, SS THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE __Voss Ros(on) lo {RFP150 100 V 0.055 Q 40 A IRFP150FI 100 V 0.055 Q 26A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 4000V DC TO-218 ISOWATT218 APPLICATIONS a HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS INTERNAL SCHEMATIC DIAGRAM = MOTOR CONTROL, AUDIO AMPLIFIERS o) AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, Etc.) 6 (1) o_- s (3) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value _ Unit IRFP150 IRFP150FI Vos Drain-source Voltage (Vas = 0) 100 Vv Voar_ |Drain- gate Voltage (Ras = 20 kQ) 100 v pj sR pes eee ees * L a _ Ves Gate-source Voltage + 20 Vv Ip Drain Current (cont.) at Te = 25 C (#) 40 26 A \o Drain Current (cont.) at Te = 100 C Drain Current (pulsed) Piot | Total Dissipation at T, = 25 C po Derating Factor 1.2 0.52 wc Tstg Storage Temperature | -65 to 175 -65 to 150 C T; Max. Operating Junction Temperature 175 150 C () Pulse width limited by safe operating area (#) Te = 50 C tor TO-218 March 1992IRFP150/FI THERMAL DATA / : TO-218 ISOWATT218 Rihj-case | Thermal Resistance Junction-case Max 0.83 1.92 C/W Rinj-amp | Thermal Resistance Junction-ambient Max 30 C/W Rtre-s | Thermal Resistance Case-sink Typ 0.1 ' C/W T Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value . Unit lAR Avalanche Current, Repetitive or Not-Repetitive 40 A | (pulse width limited by Tj max, 6 < 1%) - \ Eas Single Putse Avalanche Energy 210 ; md (starting Tj = 25 C, Ib = lar, Vop = 25 V) | Ear Repetitive Avalanche Energy 26 mJ (pulse width limited by Tj max, 6 < 1%) lar Avalanche Current, Repetitive or Not-Repetitive 24 A (Te = 100 C, pulse width limited by Tj max, 5 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vigrypss |Drain-source Ip=250 nA Vas =0 100 Vv Breakdown Voltage _ _. lpss Zero Gate Voltage Vos = Max Rating 250 HA Drain Current (Vas = 0) Vos = Max Rating x 0.8 T,. = 125 C 1000 HA lass Gate-body Leakage Ves=t20V + 100 nA {Current (Vos = 0) _ ON (+) Symbol Parameter - Test Conditions Min. | Typ. | Max Unit Vash) Gate Threshold Voltage |Vos = Ves Ip = 250 pA 2 4 Vv Rosion) [Static Drain-source On |Vas= 10V ip =22A 0.055 Q Resistance IDton} On State Drain Current |Vos > Ipton) xX Rostonjmax Vas = 10 V 40 A DYNAMIC Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Qts (*) | Forward Vos > lp(on) X Rostonymax lo = 22A 12 S Transconductance __ Ciss Input Capacitance Vos=25V f=1MHz Vaes=0 3000 pF Coss Output Capacitance 1500 pF Crss Reverse Transfer 500 pF Capacitance 27 k57 SGS-THOMSON SY7 iickosecrnowmes 256ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD i Symbol "Parameter | Test Conditions | Min. Max. | Unit tatan} Turn-on Time Voo=24V In=20A 35 ns tr Rise Time Ri = 4.70 Ves = 10 V 100 / ONS taott) Turn-off Delay Time [(see test circuit) | 125 | ns tt Fall Time | 100 ns ln=50A Ves = 10V | 90 | Tone | Voo = Max Rating x 0.8 | Qg \Total Gate Charge = = > Cs (8 28 test circuit) ee ee ee SOURCE DRAIN DIODE Symbol | Parameter a ___ Test Conditi Conditions lw Min. | Ty. "Max. 7 Unit a Isp Source-drain Current A | Posteo drain Current +60 A _tsom(e) | (Pulsed) _ ee Vsp (*) | Forward On Voltage Iso = = _ 40 A Ves =0 | 25 lov | tr Reverse Recovery Isp = 40 A di/dt = 100 A/us Time Va=30V Tj= 150C On Reverse Recovery Charge _ et i (*) Pulsed: Pulse duration = 300 us, duty cycle 1. 5% {#} Pulse width limited by safe operating area Safe Operating Area for TO-218 Package Safe Operating Area for ISOWATT218 Package Ip(A GC334B1 In(A) t z 107, 8 4] ec? 2 10", 8 2 | 10, D.C, OPERATION 6 4 2 o 4 ' 4 Boa 107" 10 10 10 Vos (Vv) 10 10! 102 Vos (V) 3/7 a &s7 SGS-THOMSON Y7 iucnowecrromes 257IRFP150/Fl Thermal Impedance for TO-218 Package 8420 K 107! Zin = K Rinsee 67 t)/T SINGLE PULSE JUL cd type 10-7 105 1074 1078 10? 107! ty (s) Derating Curve for TO-218 Package Pro (W) 160 120 80 40 0 sO 100 Output Characteristics 1p(A) Veg =10V gv 16 9 0.4 0.8 1.2 1.8 Vig () 4l7 Tg 258 j 50 Tease C) Thermal Impedance for ISOWATT218 Package 407! 0.02 0.01 SNGLE PULSE 19? JUL 1073 107 103 10" 1o7! 10 +, (s) Derating Curve for ISOWATT218 Package Pro (W) BO 60 40 20 D 50 100 150 Tegga(C) Output Characteristics GC33501 Ip(A) 40 30 20 SGS-THOMSON _ MIGRORLECTROMICS Seen eee eee ener reTransfer Characteristics 1p(A) Vos >| p(on)xR psfon)}max 20 T, =125C 0 2 4 6 B 10 V,. () Static Drain-source On Resistance GC33530 Roscan) (2) O14 0.10 0.06 0.02 0 40 80 120 1,(A) Gate Charge vs Gate-source Voltage Ves (v a 28 56 BA Q, (ne) her SGS-THOMSON MICROELECTROMICS Transconductance 9165 16 12 T, =125C 8 ~-a-- 4 Vos >lo(on)xR ps(on)max 8 10 20 30 401 (A) Maximum Drain Current vs Temperature 1p (A) 32 24 0 50 75 100 125,150 Tyga C) Capacitance Variations GCS3560 C(pF) 3200 2400 1600 800 o 10 20 30 40 Va. (Vv) S/T 259Normalized Breakdown Voltage vs Temperature GC3357+ Vger)oss (norm) 1.15 1,05 0.95 Vig =OV ip=250uA 0.85 0.75 40 0 40 80 120 1, (C) Source-drain Diode Forward Characteristics Igy (A) 0 1 2 3 4 Vso () Unclamped Inductive Load Test Circuit Normalized On Resistance vs Temperature Ros(on) (norm) 1.8 1.4 0.6 0.2 Unclamped Inductive Waveforms GC33581 Vcarjpss L Yo o 2200 | 3.3 ae uF Yoo oo -_ _l _ 'p 3 o w ie D.U.T. By 8005970 _ | 6/7 we [7 SGS-THOMSON SF Micnom.EeTROMCS 260 scossaoSwitching Time Test Circuit Gate Charge Test Circuit Yoo 53008990 (,=CONST Vi =20V=Vewax . hi SGS-THOMSON V7 MICROELECTRONICS 261