ISP75N - Infineon Technologies - Datasheet.Directory

Data Sheet V 1.4 1 2008-04-14

Smart Lowside Power Switch

For Industrial Applications

HITFET ISP 75N

Data Sheet V 1.4

Features

• Lead free

• Logic Level Input

• Input protection (ESD)

• Thermal shutdown with auto restart

• Overload protection

• Short circuit protection

• Overvoltage protection

• Current limitation

Application

• All kinds of resistive, inductive and capacitive loads in industrial applications

•µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt

Powernet

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart Power Technology, protected by embedded

protection functions.

Type Ordering Code Package

HITFET ISP 75N on request PG-SOT223-4

Product Summary

Parameter Symbol Value Unit

Continuous drain source voltage VDS 60 V

On-state resistance RDS(ON) 550 mΩ

Current limitation ID(lim) 1 A

Nominal load current ID(Nom) 0.7 A

Clamping energy EAS 550 mJ

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ISP75N

Logic OUTPUT

Stage

Over vol tage

Protection

DRAIN

dV/dt

limitation

SOURCE

ESD

Short circuit

Protection

Current

Limitation

Over

temperature

Protection

HITFET ISP 75N

Data Sheet V 1.4 2 2008-04-14

Figure 1 Block Diagram

TAB

DRAIN

SOURCE

Figure 2 Pin Configuration

Pin Definitions and Functions

Pin No. Symbol Function

1IN Input; activates output and supplies internal logic

2DRAIN Output to the load

3 + TAB SOURCE Ground; pin3 and TAB are internally connected

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Data Sheet V 1.4 3 2008-04-14

HITFET ISP 75N

Circuit Description

The ISP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic

level input, an open drain DMOS output stage and integrated protection functions. It is

designed for all kind of resistive and inductive loads (relays, solenoid) in industrial

applications.

Protection Functions

Note: The device provides embedded protection functions. Integrated protection

functions are designed to prevent IC destruction under fault conditions described

in the data sheet. Fault conditions are considered as “outside” normal operation.

•Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min.

60V) when inductive loads are switched off.

•Current limitation: By means of an internal current measurement the drain current is

limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates

in the linear region, so power dissipation may exceed the capability of the heatsink.

This operation leads to an increasing junction temperature until the over temperature

threshold is reached.

•Over temperature and short circuit protection: This protection is based on sensing

the chip temperature. The location of the sensor ensures a fast and accurate junction

temperature detection. Over temperature shutdown occurs at minimum 150 °C. A

hysteresis of typ. 10 K enables an automatic restart by cooling.

The device is ESD protected according Human Body Model (4 kV) and load dump

protected (see Maximum Ratings).

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Absolute Maximum Ratings

Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit Remarks

Continuous drain source voltage

1) See also Figure 7 and Figure 10.

1) VDS 60 V –

Drain source voltage for

short circuit protection

VDS 36 V –

Continuous input voltage VIN -0.2 … +10 V –

Peak input voltage VIN -0.2 … +20 V –

Continuous Input Current

-0.2V ≤ VIN ≤ 10V

VIN<-0.2V or VIN>10V

IIN

no limit

| IIN |≤ 2mA

mA –

Junction Temperature

Operating temperature range

Storage temperature range

Tstg

150

-30 … +85

-40 … +105

°C –

Power dissipation (DC) Ptot 1.8 W –

Unclamped single pulse inductive energy EAS 550 mJ ID(ISO) = 0.7 A;

Vbb =32V

Load dump protection

2) VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7.

IN = low or high (8 V); RL = 50 Ω

IN = high (8 V); RL = 22 Ω

VLoadDump

VVLoadDump =

VP + VS;

VP = 13.5 V

3) RI = internal resistance of the load dump test pulse generator LD200.

I3) = 2 Ω;

td = 400 ms;

Electrostatic discharge voltage (Human

Body Model)

according to MIL STD 883D, method

3015.7 and EOS/ESD assn. standard

S5.1 - 1993

VESD 4000 V –

JEDEC humidity category J-STD-20-C –MSL3/260 – –

IEC climatic category, DIN IEC 68-1 –40/150/56 – –

Thermal Resistance

Junction soldering point RthJS ≤ 10 K/W –

Junction - ambient4) RthJA ≤ 70 K/W –

HITFET ISP 75N

Data Sheet V 1.4 4 2008-04-14

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Data Sheet V 1.4 5 2008-04-14

HITFET ISP 75N

4) Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection.

Electrical Characteristics

Tj = 25 °C, unless otherwise specified

Parameter Sym-

bol

Limit Values Unit Test Conditions

min. typ. max.

Static Characteristics

Drain source clamp voltage VDS(AZ) 60 –75 VID = 10 mA,

Tj = -40 … +150 °C

Off state drain current IDSS ––5µAVIN = 0 V,

VDS = 32 V,

Tj = -40 … +150 °C

Input threshold voltage VIN(th) 11.8 2.5 VID = 10 mA

Input current:

normal operation, ID < ID(lim):

current limitation mode, ID = ID(lim):

After thermal shutdown, ID = 0 A:

IIN(1)

IIN(2)

IIN(3)

–

1000

100

250

1500

200

400

2000

µAVIN = 5 V

On-state resistance

Tj = 25 °C

Tj = 150 °C

RDS(on)

–

490

850

675

1350

mΩID = 0.7 A,

VIN = 5 V

On-state resistance

Tj = 25 °C

Tj = 150 °C

RDS(on)

–

430

750

550

1000

mΩID = 0.7 A,

VIN = 10 V

Nominal load current ID(Nom) 0.7 – – A VBB = 12 V,

VDS = 0.5 V,

TS = 85 °C,

Tj < 150 °C

Current limit ID(lim) 11.5 1.9 AVIN = 10 V,

VDS = 12 V

Dynamic Characteristics 1)

Turn-on time VIN to 90% ID:ton –10 20 µsRL = 22 Ω,

VIN = 0 to 10 V,

VBB = 12 V

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HITFET ISP 75N

Data Sheet V 1.4 6 2008-04-14

Turn-off time VIN to 10% ID:toff –10 20 µsRL = 22 Ω,

VIN = 10 to 0 V,

VBB = 12 V

Slew rate on 70 to 50% VBB:-dVDS/

dton

–510 V/

µs

RL = 22 Ω,

VIN = 0 to 10 V,

VBB = 12 V

Slew rate off 50 to 70% VBB: dVDS/

dtoff

–10 15 V/

µs

RL = 22 Ω,

VIN = 10 to 0 V,

VBB = 12 V

Protection Functions2)

Thermal overload trip

temperature

Tjt 150 165 180 °C –

Thermal hysteresis

∆

Tjt –10 –Κ–

Unclamped single pulse inductive

energy Tj = 25 °C

Tj = 150 °C

EAS

550

200

–

mJ ID(ISO) = 0.7 A,

VBB = 32 V

Inverse Diode

Continuous source drain voltage VSD – 1 – V VIN = 0 V,

-ID = 2 × 0.7 A

1) See also Figure 9.

2) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not

designed for continuous, repetitive operation.

Electrical Characteristics (cont’d)

Tj = 25 °C, unless otherwise specified

Parameter Sym-

bol

Limit Values Unit Test Conditions

min. typ. max.

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Data Sheet V 1.4 7 2008-04-14

HITFET ISP 75N

EMC-Characteristics

The following EMC-Characteristics outline the behavior of typical devices. They are not

part of any production test.

Table 1Test Conditions

Parameter Symbol Value Unit Remark

Temperature TA23 ±5 °C –

Supply Voltage VS13.5 V –

Load RL27 Ωohmic

Operation mode PWM

–

fINx=100Hz, D=0.5

ON / OFF

DUT specific VIN(’HIGH’)=5V

Fast electrical transients

acc. to ISO 7637

1) The test pulses are applied at VS

Test1)

Pulse

1-200V C C 500ms ; 10Ω

2+200V C C 500ms ; 10Ω

3a -200V C C 100ms ; 50Ω

3b +200V C C 100ms ; 50Ω

4-7V C C 0.01Ω

5175V E(65V) E(75V) 400ms ; 2Ω

Definition of functional status

Class Content

CAll functions of the device are performed as designed after exposure to

disturbance.

EOne or more function of a device does not perform as designed after

exposure and can not be returned to proper operation without repairing

or replacing the device. The value after the character shows the limit.

Max.

Test

Level

Test Result Pulse Cycle Time

and Generator

Impedance

ON OFF

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ISP75N

SOURCE

DRAININ

PULSE

HITFET ISP 75N

Data Sheet V 1.4 8 2008-04-14

Figure 3 Test circuit for ISO pulse

Conducted Emissions

Acc. IEC 61967-4 (1Ω/150Ω method)

Typ. Vbb Emissions at PWM-mode with

150Ω-matching network

-20

-10

100

0,1 1 10 100 1000

f / MHz

dBµV

Noise level

BSP75N

150ohm Class6

150ohm Class1

150Ω / 8-H

150Ω / 13-N

150Ω-Network

ISP75N

SOURCE

DRAININ

Figure 4 Test circuit for conducted

emission 1)

Conducted Susceptibility

Acc. 47A/658/CD IEC 62132-4 (Direct

Power Injection)

Direct Power Injection: Forward Power

Failure Criteria: Amplitude or frequency

variation max. 10% at OUT

Typ. Vbb Susceptibility at DC-ON/OFF

and at PWM

1 10 100 1000

f / MHz

dBm

Limit

OUT, ON

OUT, OFF

OUT, PWM

ISP75N

SOURCE

DRAININ

B A N

Test circuit for conducted susceptibility

1) For defined de coupling and high reproducibility a

defined choke (5µH at 1MHz) is inserted in the

Vbb-Line.

2) Broadband Artificial Network (short: BAN) consists

of the same choke (5µH at 1MHz) and the same

150 Ohm-matching network as for emission

measurement for defined de coupling and high

reproducibility.

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HITFET ISP 75N

Data Sheet V 1.4 9 2008-04-14

Block diagram

ISP75N

SOURCE

DRAININ

Figure 5 Terms

SOURCE

Figure 6 Input Circuit (ESD

protection)

ESD zener diodes are not designed for DC

current.

Source

Drain

Power

DMOS

LOAD

Figure 7 Inductive and Over

voltage Output Clamp

ISP75N

SOURCE

DIN

VBB

uC Vcc

GND

Px.1

Figure 8 Application Circuit

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HITFET ISP 75N

Data Sheet V 1.4 10 2008-04-14

Timing diagrams

of f

0.9*I

0.1*I

Figure 9 Switching a Resistive

Load

DS(AZ )

Figure 10 Switching an Inductive

Load

thermal hysteresis

D(lim)

Figure 11 Short circuit

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HITFET ISP 75N

Data Sheet V 1.4 11 2008-04-14

1 Max. allowable power dissipation

Ptot = f(TAmb)

0,4

0,8

1,2

1,6

0 25 50 75 100 125 150

Ptot

TAmb

°C

max.

3 On-state resistance RON = f(Tj);

ID = 0.7 A; VIN = 5 V

200

400

600

800

1000

1200

1400

-50 -25 0 25 50 75 100 125 150

RON

mΩ

°C

max.

typ.

2 On-state resistance RON = f(Tj);

ID = 0.7 A; VIN = 10 V

100

200

300

400

500

600

700

800

900

1000

-50 -25 0 25 50 75 100 125 150

RON

m Ω

°C

max.

typ.

4 Typ. input threshold voltage

VIN(th) = f(Tj); ID = 10 mA; VDS = 12 V

0,5

1,5

2,5

-50 -25 0 25 50 75 100 125 150

VIN(th)

°C

typ.

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HITFET ISP 75N

Data Sheet V 1.4 12 2008-04-14

5 Typ. on-state resistance RON = f(VIN);

ID = 0.7 A; Tj = 25 °C

500

1000

1500

2000

0246810

VIN

typ.

RON

m Ω

7 Typ. short circuit current

ID(SC) = f(VIN); VDS = 12 V, Tj = 25 °C

0,5

1,5

0246810

ID(SC)

VIN

typ.

6 Typ. current limitation ID(lim) = f(Tj);

VDS = 12 V, VIN = 10 V

0,5

1,5

-50 -25 0 25 50 75 100 125 150

ID(lim )

°C

typ.

8 Max. transient thermal impedance

ZthJA = f(tp) @ 6cm²; Parameter: D = tp/T

0,1

100

0,00001 0,001 0,1 10 1000 10000

0.01

0.02

0.05

0.1

0.2

0.5

Zth(JA)

K/W

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Data Sheet 13 V1.4, 2008-04-14

HITFET ISP 75N

Package Outlines HITFET‚ ISP 75N

1 Package Outlines HITFET ISP 75N

GPS05560

123

±0.1

±0.04

0.5 MIN.

0.28

0.1 MAX.

15˚ MAX.

6.5

±0.2

4.6

2.3

0.7

±0.1

0.25

1.6

±0.1

7±0.3

B0.25

±0.2

3.5

0...10˚

Figure 12 PG-SOT223-4

You can find all of our packages, sorts of packing and others in our

Infineon Internet Page: http://www.infineon.com/packages.Dimensions in mm

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HITFET ISP 75N

Revision History

Data Sheet 14 V1.4, 2008-04-14

2 Revision History

Version Date Changes

V1.4 2008-04-14 package naming updated to PG-SOT223-4

V1.3 2006-11-20 changed the term “industry” to “industrial” to make it clear that

this device is not targeted for automotive use

V1.2 2006-08-08 added Junction Temperature in maximum ratings

V1.1 2006-08-02 first released version

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Published by Infineon Technologies AG

Edition 2008-04-14

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

D-81541 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be

considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of

non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office in Germany or our Infineon

Technologies Representatives worldwide.

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Due to technical requirements components may contain dangerous substances. For

information on the types in question please contact your nearest Infineon

Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system. Life

support devices or systems are intended to be implanted in the human body, or to

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