MIL-PRF-19500/455C
25 January 1998
SUPERSEDING
MIL-S-19500/455B
19 January 1988
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING
TYPES 2N5664, 2N5665, 2N5666, 2N5666S, 2N5667, AND 2N5667S
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-
switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-66) and figure 2 (TO-5).
1.3 Maximum ratings.
Type PT
TA = +25
q
CPT
TA = +100
q
CVCBO VCEO VEBO ICIBTstg and Top
2N5664
2N5665
2N5666, S
2N5667, S
W
2.5 1/
2.5 1/
1.2 2
1.2 2/
W
30 3/
30 3/
15 4/
15 4/
V dc
250
400
250
400
V dc
200
300
200
300
V dc
6
6
6
6
A dc
5
5
5
5
A dc
1
1
1
1
q
C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
1/ Derate linearly 14.3 mW/
q
C for TA > + 25
q
C.
2/ Derate linearly 6.9 mW/
q
C for TA > + 25
q
C.
3/ Derate linearly 300 mW/
q
C for TC > + 100
q
C .
4/ Derate linearly 150 mW/
q
C for TC > +100
q
C .
AMSC N/A FSC 5961
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 25 April 1998
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
MIL-PRF-19500/455C
2
1.4 Primary electrical characteristics at T = 25
q
C.
A
hFE |hfe|VBE(sat) VCE(sat) Pulse response
Limits VCE = 5 V
IC = 1 A VCE = 5 V
IC = 0.5 A dc
f = 10 MHz
IC = 3 A dc
1/ IC = 3 A dc
1/ ton
IC = 1 A dc toff
IC = 1 A dc
2N5665
2N5667, S 2N5664
2N5666, S 2N5664
2N5666, S 2N5665
2N5667, S
Min
Max 25
75 40
120 2.0
7.0
V dc
1.2
V dc
0.4
P
s
0.25
P
s
1.5
P
s
2.0
1/ IB = 0.3 A dc for 2N5664, 2N5666, 2N5666S; IB = 0.6 A dc for 2N5665, 2N5667, 2N5667S.
Type R
T
JC
2N5664, 2N5665
2N5666, 2N5667
2N5666S, 2N5667S
q
C/W (max)
3.3
6.7
6.7
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
MIL-PRF-19500/455C
3
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Body contour is optional within zone defined by LD AND CD.
4. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane.
When gauge is not used, measurement will be made at seating plane.
5. Both terminals.
6. At both ends.
7. Two holes.
8. The collector shall be electrically connected to the case.
9. LD applies between L1 and LL. Diameter is uncontrolled in L1.
FIGURE 1. Physical dimensions of transistor types 2N5664 and 2N5665.
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CD - - - .620 - - - 15.75 3
CD1.470 .500 11.94 12.70
CH .250 .340 6.35 8.64 3
HR - - - .350 - - - 8.89 6
HR1.115 .145 2.92 3.68
HT .050 .075 1.27 1.91 3
HT1- - - .050 - - - 1.27 3
LD .028 .034 .711 .863 5, 9
LL .360 .500 9.14 12.70 5, 9
L1- - - .050 - - - 1.27 4
MHD .142 .152 3.62 3.86 7
MHS .958 .962 24.33 24.43
PS .190 .210 4.83 5.33 4
PS1.093 .107 2.36 2.72 4
S1.570 .590 14.48 14.99
MIL-PRF-19500/455C
4
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Measured in the zone beyond .250 inches (6.35 mm) from the
seating plane.
4. Measured in the zone .050 inches (1.27 mm) and .250 inches
(6.35 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010
inches (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 inches +.001, -.000 (1.37
mm +.03, -.00 ) below the seating plane of the transistor,
maximum diameter leads shall be within .007 inches (.18 mm) of
their true location relative to a maximum width tab. Smaller
diameter leads shall fall within the outline of the maximum diameter
lead tolerance. Figure 3 shows the preferred measured method.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads
11. Diameter of leads in this zone is not controlled.
12. Lead 1 - Emitter; lead 2 - Base, lead 3 - Collector.
13. For transistor types 2N5666 and 2N5667, LL is 1.500 inches (38.1
mm) minimum and 1.75 inches (44.45 mm) maximum.
14. For transistor types 2N5666S and 2N5667S, LL is .500 inches
(12.7 mm) minimum and .75 inches (19.05 mm) maximum.
FIGURE 2. Physical dimensions of transistor types 2N5666, 2N5666S, 2N5667 and 2N5667S.
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CD .305 .335 7.75 8.51
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .1414 Nom 3.59 Nom 6
LD .016 .021 0.41 0.53 3
LL See notes 13 and 14
L1- - - .050 - - - 1.27 10
LU .016 .019 0.41 0.48 4
P .100 - - - 2.54 - - - 5
Q6
r - - - .007 - - - 0.18
TL .029 .045 0.74 1.14
TW 0.28 .034 0.71 0.86
MIL-PRF-19500/455C
5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The following gauging procedures shall be used: The use of a pin straightener prior to insertion in the gauge is permissible. The
device being measured shall be inserted until its seating plane is .125 inch (3.18 mm) +.010 inch (0.254 mm) from the seating
surface of the gauge. A spacer may be used to obtain the .125 inch (3.18 mm) distance from the gauge seat prior to force
application. A force of 8 ".5 ounces shall then be applied parallel and symmetrical to the device's cylindrical axis. When
examined visually after the force application (the force need not be removed) the seating plane of the device shall be seated
against the gauge.
4. The location of the tab locator, within the limits of dimension C, will be determined by the tab and flange dimension of the
device being checked.
FIGURE 3. Gauge for lead and tab location for device types 2N5666, 2N5666S, 2N5667 and 2N5667S.
Dimensions
Ltr Inches Millimeters
Min Max Min Max
A .1409 .1419 3.579 3.604
B .0702 .0712 1.783 1.809
C .182 .199 4.62 5.05
D .009 .011 0.23 0.28
E .125 Nom 3.18 Nom
F .054 .055 1.37 1.40
G .372 .378 9.45 9.60
H .0350 .0355 0.889 0.902
J .150 Nom 3.81 Nom
K .0325 .0335 0.826 0.851
L .0595 .0605 1.511 1.537
MIL-PRF-19500/455C
6
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.3).
3.2 Associated specification. The individual item performance requirements shall be in accordance with MIL-PRF-19500, and as
specified herein.
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in
MIL-PRF-19500 and herein.
3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1 and 2 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL -PRF-19500. Where a choice of lead finish is desired, it
shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characterics are as specified
in 1.3, 1.4 and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
MIL-PRF-19500/455C
7
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (Appendix E, table
IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits
of table I herein shall not be acceptable.
Screen (see appendix E, Measurement
table IV of MIL-PRF-19500 JANS level JANTX and JANTXV levels
9ICES1 and hFE2 ICES1
11
'
ICES1 and hFE2;
'
ICES1 = 100 percent of initial value or
10 nA dc, whichever is greater;
'
hFE2 =
r
15 percent
ICES1 and hFE2;
'
ICES1 = 100 percent of initial value or
20 nA dc, whichever is greater.
12 See 4.3.1 See 4.3.1
13 Subgroup 2 of table I herein;
'
ICES1 = +100 percent of initial value or
10 nA dc, whichever is greater.
'
hFE2 = + 15 percent
Subgroup 2 of table I herein;
'
ICES1 = +100 percent of initial value
or 20 nA dc, whichever is greater.
'
hFE2 = + 25 percent
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
TJ = + 187.5
r
12.5
q
C, VCE = 100 V dc, TA
d
+ 100
q
C.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500 and
table I herein. Endpoint electrical measurements shall be in accordance with the applicable steps of table II herein
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with conditions specified for the subgroup testing in
appendix E, table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements
(end points) and delta requirements shall be in accordance with the applicable steps of table II herein.
4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method Condition
B4 1037 VCB = 30 V dc minimum, PT = 1.2 W (TO-5),. PT = 2.5 W (TO-66) minimum, TA = +25
q
C
r
3
q
C; ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced-air cooling
on devices shall be permitted.
B5 1027 See 4.5.4.
B6 3131 See 4.5.2.
MIL-PRF-19500/455C
8
4.4.2.2 Group B inspection, appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
B3 1027 TJ = +187.5
q
C
r
12.5
q
C, VCE = 100
r
5 V dc; TA =
d
+100
q
C.
B5 3131 See 4.5.2.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
appendix E, table VII of MIL-PRF-19500 and as follows. Electrical measurements (endpoints) and delta requirements shall be in
accordance with the applicable steps of Table II herein.
Subgroup Method Condition
C2 2036 Terminal strength (tension) 2N5664 and 2N5665 only: Test condition A, weight = 3
pounds, application time = 15 seconds.
Terminal strength (lead fatigue) 2N5666, 2N5666S, 2N5667 and 2N5667S: Test condition
E.
C6 1027 2N5664, 2N5666 and 2N5666S, TC = +100
q
C; PT = 30 W; VCE = 30 V dc.
2N5665, 2N5667 and 2N5667S, TA = +25
q
C; PT = 1.2 W; VCE = 40 V.
4.5 Methods of examination and test. Methods of examination and test shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in Section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750.
The following details shall apply:
a. Collector current magnitude during power application:
2N5664 and 2N5665, 0.833 A dc.
2N5666, 2N5666S, 2N5667 and 2N5667S, 0.41 A dc.
b. Collector to emitter voltage magnitude shall be 20 V dc.
c. Reference temperature measuring point shall be the case.
d. Reference temperature measuring point shall be 25
q
C
d
TR
d
75
q
C and recorded before the test is started.
e. Mounting arrangement shall be with heat sink to header.
f. Maximum limit of R
T
JC: 2N5664 and 2N5665 shall be 3.3
q
C/W; 2N5666, 2N5666S, 2N5667 and 2N5667S shall be
6.7
q
C/W.
4.5.3 Inspection conditions. Unless otherwise specified herein, all inspections shall be conducted at a case temperature (TC) of 25
q
C.
MIL-PRF-19500/455C
9
4.5.4 Group B accelerated life test. This test shall be conducted using one of the three options listed herein (a, b, or c) with the
following conditions applying to all options: VCB = 30 V dc, 96 hours minimum, TJ = +275
q
C.
a. TA = +150
q
C, maximum.
b. PT = 2.5 W (TO-66); PT = 1.2 W (TO-5), TA = +112
q
C or PT adjusted to give a lot average of TJ = +275
q
C.
c. TA = +25
q
C +3
q
C with PT adjusted to give a lot average of TJ = +275
q
C.
MIL-PRF-19500/455C
10
TABLE I. Group A inspection.
Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
Subgroup 1
Visual and mechanical
inspection
Subgroup 2
Breakdown voltage
collector to emitter
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Breakdown voltage
emitter to base
Collector to emitter
cutoff current
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Collector to base cutoff
current
2N5664, 2N5666, Sn5666S
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
2N5665, 2N5667, 2N5667S
Forward-current
transfer ratio
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Forward-current
transfer ratio
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Forward-current
transfer ratio
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
2071
3011
3026
3041
3036
3076
3076
3076
Bias condition B; IC = 10 mA dc
pulsed (see 4.5.1), R1 = 100
:
Bias condition D, IE = 10
P
A dc;
pulsed (see 4.5.1)
Bias condition C
VCE = 200 V dc
VCE = 300 V dc
Bias condition D
VCB = 200 V dc
VCB = 250 V dc
VCB = 300 V dc
VCB = 400 V dc
VCE = 2 V dc, IC = 0.5 A dc
pulsed (see 4.5.1)
VCE = 5 V dc, IC = 1.0 A dc
pulsed (see 4.5.1)
VCE = 5 V dc, IC = 3.0 A dc
V(BR)CER
V(BR)EBO
ICES1
ICBO
hFE1
hFE2
hFE3
250
400
6
40
25
40
25
15
10
0.2
0.1
1.0
0.1
1.0
120
75
V dc
V dc
P
A dc
P
A dc
P
A dc
mA dc
P
A dc
mA dc
See footnote at end of table.
MIL-PRF-19500/455C
11
TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
Subgroup 2 - Continued
Forward-current
transfer ratio
Collector-emitter
saturation voltage
2N5664, 2N5666, 2N2666S
2N5665, 2N2667, 2N5667S
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
2N5664, 2N5666, 2N2666S
2N5665, 2N2667, 2N5667S
Base-emitter saturation
voltage
Subgroup 3
High-temperature
operation:
Collector to emitter
cutoff current
2N5664, 2N5666, 2N2666S
2N5665, 2N2667, 2N5667S
Low-temperature
operation
Forward-current
transfer ratio
2N5664, 2N5666, 2N2666S
2N5665, 2N2667, 2N5667S
3076
3071
3071
3066
3066
3041
3076
VCE = 5 V dc, IC = 5 A dc
pulsed (see 4.5.1)
IC = 3.0 A dc,
IB = 0.3 A dc, pulsed (see 4.5.1)
IB = 0.6 A dc, pulsed (see 4.5.1)
IC = 5 A dc, IB = 1 A dc
pulsed (see 4.5.1)
Test condition A, IC = 3.0 A dc,
IB = 0.3 A dc, pulsed (see 4.5.1)
IB = 0.6 A dc, pulsed (see 4.5.1)
Test condition A, IC = 5 A dc,
IB = 1 A dc, pulsed (see 4.5.1)
TA = + 150
q
C
Bias condition C
VCE = 200 V dc
VCE = 300 V dc
TA = -55
q
C
VCE = 5 V dc, IC = 1.0 A dc
pulsed (see 4.5.1)
hFE4
VCE(sat)1
VCE(sat)2
2/
VBE(sat)1
2/
VBE(sat)2
ICES2
hFE5
5
15
10
0.4
1.0
1.2
1.5
100
V dc
V dc
V dc
V dc
P
A dc
See footnote at end of table.
MIL-PRF-19500/455C
12
TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
Subgroup 4
Magnitude of common-emitter,
small-signal short-circuit,
forward-current, transfer ratio
Open-circuit output
capacitance
Switching time
Turn-on time
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Turn-off time
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Subgroup 5
Safe operating area
(continuous dc) (for types
2N5664 and 2N5665 only)
Test #1
2N5664 and 2N5665
Test #2
2N5664 and 2N5665
Test #3 2N5664
Test #4 2N5665
3306
3236
3051
VCE = 5 V dc, IC = 0.5 A dc
f = 10 MHz
VCB = 10 V dc, 100
d
f
d
1 MHz
Test condition A;
IC = 1.0 A dc, VCC = 100 V dc
See figure 4
See figure 5
Test condition A;
IC = 1.0 A dc, VCC = 100 V dc
See figure 4
See figure 5
TC = + 100
q
C, t
t
1 s, 1 cycle;
tr + tf = 10
P
s (se figure 6)
VCE = 6 V dc, IC = 5 A dc
VCE = 40 V dc, IC = 0.75 A dc
VCE = 200 V dc, IC = 43 mA dc
VCE = 300 V dc, IC = 21 mA dc
| hfe |
Cobo
ton
toff
2.0 7.0
120
0.25
1.5
2.0
pF
P
s
P
s
See footnote at end of table.
MIL-PRF-19500/455C
13
TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
Subgroup 5 - Continued
Safe operating area
(continuous dc) (for types
2N5666, 2N5666S,
2N5667, and 2N5667S
Test #1
2N5666, 2N5666S,
2N5667, and 2N5667S
Test #2
2N5666, 2N5666S,
2N5667, and 2N5667S
Test #3
2N5666 and 2N5666S
Test #4
2N5667 and 2N5667S
Safe operating area
(switching)
2N5664
2N5666 and 2N5666S
2N5665
2N5667 and 2N5667S
End-point electrical
measurements
Subgroups 6 and 7
Not applicable
3051
3053
TC = + 100
q
C, t
t
1 s, 1 cycle;
tr + tf = 10
P
s (se figure 7)
VCE = 3.0 V dc, IC = 5 A dc
VCE = 37.5 V dc, IC = 0.4 A dc
VCE = 200 V dc, IC = 27 mA dc
VCE = 300 V dc, IC = 14 mA dc
Load condition B (clamped inductive
load) (see figure 8); TC = + 100
q
C,
tr + tf
d
10
P
s, duty cycle
d
2 percent;
tp = 4 ms; RS = 0.5
:
,
RBB1 = 50
:
, VBB1 = 50 V dc
RBB2 = 50
:
, VBB2 = -4 V dc
IC = 5 A dc, VCC = 50 V dc
RL
d
2.5
:
, L = 40 mH (Triad C-48U
or equivalent)
Clamp voltage = 200 +0, -5 V dc
Clamp voltage = 300 +0, -5 V dc
See table II, steps 1 and 4
1/ For sampling plan, see MIL-PRF-19500
MIL-PRF-19500/455C
14
TABLE II. Groups B and C electrical measurements. 3/ 4/ 5/
Steps Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
1. Collector to emitter
cutoff current
2N5664
2N5666, 2N5666S
2N5665
2N5667, 2N5667S
3041 Bias condition C
VCE = 200 V dc
VCE = 300 V dc
ICES1
0.2
0.2
P
A dc
P
A dc
2. Collector to emitter
voltage (saturated) 3071 IC = 5 A dc; IB = 1 A dc
(pulsed, see 4.5.1) 2/ VCE(sat)2 1.0 V dc
3. Base to emitter
saturation voltage 3066 Test condition A, IC = 5 A dc
IB = 1 A dc,
pulsed (see 4.5.1) 2/
VBE(sat)2 1.5 V dc
4. Forward-current
transfer ratio
2N5664
2N5666, 2N5666S
2N5665
2N5667, 2N5667S
3076 VCE = 5 V dc, IC = 1.0 A dc
pulsed (see 4.5.1) hFE2
40
25
120
75
5. Collector to emitter
cutoff current 3041 Base condition C
'
ICES1 100 percent of initial
value or 20 nA dc,
whichever is greater.
2N5664
2N5666, 2N5666S
2N5665
2N5667, 2N5667S
VCE = 200 V dc
VCE = 300 V dc
6. Forward-current
transfer ratio 3076 VCE = 5 V dc, IC = 1.0 A dc
pulsed (see 4.5.1)
'
hFE2 2/
r
25 percent change from
initial reading.
1/ See MIL-PRF-19500 for sampling plan.
2/ Measured at less than 0.125 in (3.175 mm) from case.
3/ The electrical measurements for appendix E, table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table II herein, steps 1, 2, 3, and 4.
b. Subgroup 4, see table II herein, steps 1, 2, 3, and 4.
c. Subgroup 5, see table II herein, steps 1, 2, 3, and 4.
MIL-PRF-19500/455C
15
TABLE II. Groups B and C electrical measurements - Continued.
4/ The electrical measurements for appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table II herein, steps 1 and 3.
b. Subgroup 3, see table II herein, steps 1, 2, 3, 4, 5, and 6.
c. Subgroup 6, see table II herein, steps 1, 4, 5, and 6.
5/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table II herein, steps 1, 2, and 4.
b. Subgroup 3, see table II herein, steps 1, 2, and 4.
c. Subgroup 6, see table II herein, steps 1, 2, 3, 4, 5, and 6.
MIL-PRF-19500/455C
16
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics: tr
d
15 ns, tf
d
15 ns, Zout = 50 ohm, PW
= 10
P
s, duty cycle
d
2 percent.
2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr
d
15 ns, Zin
t
10 M
:
, Cin
d
11.5 pF.
3. Resistors shall be noninductive types.
4. The dc power supplies may require additional bypassing in order to minimize ringing.
5. The input pulse voltages and supply voltages (-4 V dc and + 100 V dc) are nominal and shall be adjusted to obtain
I
B1 = - IB2 = 30 mA and IC = 1 A.
6. An equivalent circuit may be used.
7. 0.02
P
F capacitor may be removed during voltage adjustments.
FIGURE 4. Pulse response test circuit for types 2N5664, 2N5666 and 2N5666S.
MIL-PRF-19500/455C
17
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics: tr
d
15 ns, tf
d
15 ns, Zout = 50 ohm, PW
= 10
P
s, duty cycle
d
2 percent.
2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr
d
15 ns, Zin
t
10 M
:
, Cin
d
11.5 pF.
3. Resistors shall be noninductive types.
4. The dc power supplies may require additional bypassing in order to minimize ringing.
5. The input pulse voltages and supply voltages (-4 V dc and + 100 V dc) are nominal and shall be adjusted to obtain
I
B1 = - IB2 = 50 mA and IC = 1 A.
6. An equivalent circuit may be used.
7. 0.02
P
F capacitor may be removed during voltage adjustments.
FIGURE 5. Pulse response test circuit for types 2N5665, 2N5667 and 2N5667S.
MIL-PRF-19500/455C
18
FIGURE 6. Maximum safe operating graph (continuous dc) for types 2N5664 and 2N5665.
MIL-PRF-19500/455C
19
FIGURE 7. Maximum safe operating graph (continuous dc) for types 2N5666, 2N5666S, 2N5667, and 2N5667S.
MIL-PRF-19500/455C
20
FIGURE 8. Safe operating area for switching between saturation and cutoff (clamped inductive load).
MIL-PRF-19500/455C
21
FIGURE 9. Safe operating area for switching between saturation and cutoff (unclamped inductive load).
MIL-PRF-19500/455C
22
5. PACKAGING
5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental
to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible
packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points'
packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging
data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or
by contacting the responsible packaging activity.
5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. See MIL- PRF-19500.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000.
6. 4 C hanges from previous is sue. Mar ginal notations are not us ed in this revis ion t o iden tif y c hanges with res pec t to the previous
issue due to the extent of the changes.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 17 (Project 5961-1917)
Review activities:
Army - AR, MI
Navy - AS, CG, MC
Air Force - 13, 19, 85, 99
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER
MIL-PRF-19500/455C 2. DOCUMENT DATE (YYMMDD)
980125
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES 2N5664, 2N5665, 2N5666,
2N5666S, 2N5667 AND 2N5667S JAN, JANTX, JANTXV AND JANS
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial) b. ORGANIZATION
c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)
Commercial
DSN
FAX
EMAIL
7. DATE SUBMITTED
(YYMMDD)
8. PREPARING ACTIVITY
a. Point of contact:Alan Barone b. TELEPHONE
Commercial DSN FAX EMAIL
614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil
c. ADDRESS: Defense Supply Center
Columbus, ATTN: DSCC-VAT, 3990 East Broad
Street, Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Quality and Standardization Office
5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466
Telephone (703) 756-2340 AUTOVON 289-2340
DD Form 1426, OCT 89 Previous editions are obsolete 198/290
