Advanced Power DUAL N-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement BVDSS 30V
▼ Fast Switching Performance RDS(ON) 18mΩ
▼ Two Independent Device ID22A
▼ Halogen Free & RoHS Compliant Product
Description
Absolute Maximum Ratin
g
s
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃A
ID@TA=25℃Continuous Drain Current3A
ID@TA=70℃Continuous Drain Current3A
IDM Pulsed Drain Current1A
PD@TA=25℃Total Power Dissipation W
TSTG Storage Temperature Range ℃
TJOperating Junction Temperature Range ℃
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 10.0 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient342 ℃/W
Data and specifications subject to change without notice
Parameter Rating
20090420pre
1
Continuous Drain Current
Thermal Data
Parameter
8.5
+20
AP6904GH-HF
Preliminary
30
-55 to 150
-55 to 150
22
10.6
50
3
G2
D2
S2
G1
D1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
SDPAKTM
G1 S2 G2
D1 (TAB1)
D2 (TAB2)
SDPAKTM used APEC innovated package and provides two
independent device that is suitable and optimum for DC/DC
power application.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=9A - - 18 mΩ
VGS=4.5V, ID=6A - - 38 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=9A - 12 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=9A - 8.7 14 nC
Qgs Gate-Source Charge VDS=24V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC
td(on) Turn-on Delay Time2VDS=15V - 6 - ns
trRise Time ID=9A - 24 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 15 - ns
tfFall Time RD=1.67Ω-6-
ns
Ciss Input Capacitance VGS=0V - 445 710 pF
Coss Output Capacitance VDS=25V - 110 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF
RgGate Resistance f=1.0MHz - 1.5 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2.5A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2Is=9A, VGS=0V, - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Rthja is determined with the device, mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6904GH-HF
AP6904GH-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
50
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
7.0V
6.0V
5.0V
VGS =4.0V
0
10
20
30
40
50
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
7.0V
6.0V
5.0V
VGS =4.0V
10
20
30
40
246810
VGS ,Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=6A
TA=25oC
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=9A
VG=10V
0
0.5
1
1.5
2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
AP6904GH-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
0481216
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=9A
VDS =15V
VDS =18V
VDS =24V
0
200
400
600
800
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=75oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
100us
1ms
10ms
100ms
1s
DC
TA=25oC
Single Pulse
td(on) trtd(off)tf
VDS
VGS
10%
90%
