FFPF10F150S 10 A, 1500 V, Damper Diode Features * * * * * High Speed Recovery tRR = 170 ns (@ IF = 1 A) Max Forward Voltage, VF = 1.6 V (@ TC = 25C) 1500 V Reverse Voltage and High Reliability Low Forward Voltage This Device is Pb-Free and is RoHS Compliant www.onsemi.com Applications * Suitable for Damper Diode in Horizontal Deflection Circuits 1 1. Cathode 2 2. Anode ABSOLUTE MAXIMUM RATINGS TC = 25C unless otherwise noted Parameter Symbol Rating Unit VRRM Peak Repetitive Reverse Voltage 1500 V VRWM Working Peak Reverse Voltage 1500 V IF(AV) Average Rectified Forward Current @ TC = 125C 10 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 100 A - 65 to +175 C TJ, TSTG Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 TO-220, 2-Lead CASE 221AS MARKING DIAGRAM $Y&Z&3&K F10F150S $Y &Z&3 &K F10F150S = ON Semiconductor Logo = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2000 March, 2019 - Rev. 3 1 Publication Order Number: FFPF10F150S/D FFPF10F150S THERMAL CHARACTERISTICS TC = 25C unless otherwise noted Parameter Symbol RJC Maximum Thermal Resistance, Junction to Case Max. Unit 3.0 C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF10F150STU F10F150S TO-220F-2L Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS TC = 25C unless otherwise noted Parameter Conditions VF (Note 1) Maximum Instantaneous Forward Voltage IF = 10 A IF = 10 A IR (Note 1) Maximum Instantaneous Reverse Current @ rated VR Min. Typ. Max. TC = 25C TC = 125C - - - - 1.6 1.4 TC = 25C TC = 125C - - - - 10 80 Unit V A tRR Maximum Reverse Recovery Time (IF = 1 A, diF/dt = 50 A/s, VR = 30 V) - - 170 ns tFR Maximum Forward Recovery Time (IF = 6.5 A, diF/dt = 50 A/s) - - 250 ns - - 14 V VFRM Maximum Forward Recovery Voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2 FFPF10F150S TYPICAL CHARACTERISTICS 100 Reverse Current, IR [A] Forward Current, IF [A] 100 10 TJ = 125C 1 TJ = 25C 0.1 0.0 0.4 0.8 1.2 1.6 10 TJ = 125C 1 TJ = 100C 0.1 TJ = 25C 0.01 0.001 0 2.0 300 Forward Voltage, VF [V] Figure 3. Typical Forward Voltage Drop 200 140 120 100 80 60 40 20 0 0.1 1 10 300 200 di/dt = 100 A/s 100 0 100 1 2 3 4 5 6 7 8 9 10 Forward Voltage, IF [A] Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time 12 Average Forward Current, IF(AV) [A] 2000 Stored Recovery Charge, QRR [nC] 1500 di/dt = 50 A/s Reverse Voltage, VR [V] di/dt = 100 A/s 1500 1000 di/dt = 50 A/s 500 0 1200 400 Reverse Recovery Time, tRR [ns] Capacitance, CJ [pF] 160 900 Figure 4. Typical Reverse Current Typical Capacitance at 0 V = 150 pF 180 600 Reverse Voltage, VR [V] 1 2 3 4 5 6 7 8 9 10 10 8 6 4 2 0 25 50 75 100 125 150 175 Case Temperature, TC [C] Forward Current, IF [A] Figure 7. Typical Stored Charge Figure 8. Forward Current Deration Curve www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220 Fullpack, 2-Lead / TO-220F-2FS CASE 221AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON67438E DATE 29 FEB 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. TO-220 FULLPACK, 2-LEAD / TO-220F-2FS PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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