© Semiconductor Components Industries, LLC, 2000
March, 2019 Rev. 3
1Publication Order Number:
FFPF10F150S/D
FFPF10F150S
10 A, 1500 V, Damper Diode
Features
High Speed Recovery tRR = 170 ns (@ IF = 1 A)
Max Forward Voltage, VF = 1.6 V (@ TC = 25°C)
1500 V Reverse Voltage and High Reliability
Low Forward Voltage
This Device is PbFree and is RoHS Compliant
Applications
Suitable for Damper Diode in Horizontal Deflection Circuits
ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted
Symbol Parameter Rating Unit
VRRM Peak Repetitive Reverse Voltage 1500 V
VRWM Working Peak Reverse Voltage 1500 V
IF(AV) Average Rectified Forward Current
@ TC = 125°C
10 A
IFSM Nonrepetitive Peak Surge Current
60Hz Single HalfSine Wave
100 A
TJ, TSTG Operating Junction and Storage
Temperature
65 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO220, 2Lead
CASE 221AS
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MARKING DIAGRAM
$Y&Z&3&K
F10F150S
$Y = ON Semiconductor Logo
&Z&3 = Data Code (Year & Week)
&K = Lot
F10F150S = Specific Device Code
1
1. Cathode 2. Anode
2
12
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
FFPF10F150S
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2
THERMAL CHARACTERISTICS TC = 25°C unless otherwise noted
Symbol Parameter Max. Unit
RθJC Maximum Thermal Resistance, Junction to Case 3.0 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFPF10F150STU F10F150S TO220F2L Tube N/A N/A 30
ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted
Parameter Conditions Min. Typ. Max. Unit
VF
(Note 1) Maximum Instantaneous Forward Voltage
IF = 10 A
IF = 10 A
TC = 25°C
TC = 125°C
1.6
1.4
V
IR
(Note 1) Maximum Instantaneous Reverse Current
@ rated VRTC = 25°C
TC = 125°C
10
80
A
tRR Maximum Reverse Recovery Time (IF = 1 A, diF/dt = 50 A/s, VR = 30 V) 170 ns
tFR Maximum Forward Recovery Time (IF = 6.5 A, diF/dt = 50 A/s) 250 ns
VFRM Maximum Forward Recovery Voltage 14 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
FFPF10F150S
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3
TYPICAL CHARACTERISTICS
Figure 3. Typical Forward Voltage Drop Figure 4. Typical Reverse Current
Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time
Figure 7. Typical Stored Charge Figure 8. Forward Current Deration Curve
0.1
1
10
100
0.001
0.01
0.1
1
10
100
0.1
0
20
40
60
80
100
120
140
160
180
200
0
100
200
300
400
0
500
1000
1500
2000
1 10 100
Forward Voltage, VF [V] Reverse Voltage, VR [V]
Forward Current, IF [A]
Reverse Current, IR [A]
0.0 0.4 0.8 1.2 1.6 2.0 0 300 600 900 1200 1500
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
Reverse Voltage, VR [V]
Capacitance, CJ [pF]
Reverse Recovery Time, tRR [ns]
Forward Voltage, IF [A]
12345678910
Typical Capacitance
at 0 V = 150 pF
di/dt = 50 A/s
di/dt = 100 A/s
Forward Current, IF [A]
Stored Recovery Charge, QRR [nC]
Average Forward Current, IF(AV) [A]
12 3 4 5 6 7 8 9 10
Case Temperature, TC [°C]
di/dt = 100 A/s
di/dt = 50 A/s
0
8
12
25 50 75 150 175
10
6
4
2
100 125
TO220 Fullpack, 2Lead / TO220F2FS
CASE 221AS
ISSUE O
DATE 29 FEB 2012
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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TO220 FULLPACK, 2LEAD / TO220F2FS
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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1
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