2SK3492 Ordering number : ENN8279 N-Channel Silicon MOSFET 2SK3492 General-Purpose Switching Device Applications Features * * * Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS Unit 60 V 8 A ID IDP PW10s, duty cycle1% V 20 32 A 1 W Allowable Power Dissipation PD 15 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Tc=25C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) Ratings min typ ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=16V, VDS=0V 60 VDS=10V, ID=1mA 1.2 3 Unit max V 1 A 10 A 2.6 5 V yfs RDS(on)1 VDS=10V, ID=4A S ID=4A, VGS=10V 115 150 m RDS(on)2 Ciss ID=4A, VGS=4V 155 220 m VDS=20V, f=1MHz 300 pF Output Capacitance Coss VDS=20V, f=1MHz 54 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 34 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns tr See specified Test Circuit. 32 ns td(off) See specified Test Circuit. 30 ns tf See specified Test Circuit. 44 ns Rise Time Turn-OFF Delay Time Fall Time Continued on next page. (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: 2SK3492/D 2SK3492 Continued from preceding page. Parameter Symbol Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Diode Forward Voltage nC 2.4 nC Qgd VSD IS=8A, VGS=0V 0.9 2.3 V 1.5 0.5 0.5 1 2 3 0 to 0.2 0.6 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.5 0.8 1.2 3 1.2 5.5 7.0 1.5 4 7.5 0.8 1.6 2 nC 1.2 2.3 6.5 5.0 0.5 7.0 5.5 1.7 0.85 1 Unit max Package Dimensions unit : mm 7003-004 0.85 0.7 0.6 typ 7.8 2.3 4 min VDS=30V, VGS=10V, ID=8A VDS=30V, VGS=10V, ID=8A VDS=30V, VGS=10V, ID=8A Package Dimensions unit : mm 7518-004 6.5 5.0 Ratings Conditions 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA SANYO : TP Switching Time Test Circuit VDD=30V 10V 0V VIN ID=4A RL=7.5 VOUT D VIN PW=10s D.C.1% G P.G 50 V GS=3.5V 4 3 2 0 C 5 4 3 2 25 1 1 75C 25C 6 VDS=10V 25 0V 6. Ta= -- 7 5C --25 C 5 V 4.0 5 Ta= 7 10 6 ID -- VGS 8 .0V Drain Current, ID -- A V .0V 8.0 7 16 .0V ID -- VDS 8 Drain Current, ID -- A 2SK3492 C S 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Drain-to-Source Voltage, VDS -- V 0 IT09598 Rev.0 I Page 2 of 4 I www.onsemi.com 1 2 3 4 Gate-to-Source Voltage, VGS -- V 5 6 IT09599 2SK3492 RDS(on) -- VGS 300 250 200 150 100 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V VG A, 4 I D= 150 V =10 VGS 4A, I D= 100 50 --40 --20 0 20 40 60 80 100 120 140 5 160 IT09601 IS -- VSD 10 7 5 VGS=0V 3 --2 C 5 7 0.1 C 25 7 5 3 1.0 7 5 3 2 --25 C = Ta C 25C C 5 2 2 Ta=7 5 3 0.1 7 5 3 2 2 0.01 0.2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT09602 Drain Current, ID -- A 5 Ciss, Coss, Crss -- pF 2 td(on) 7 tr 5 1.2 IT09603 f=1MHz tf td (off) 1.0 0.8 5 3 10 0.6 Ciss, Coss, Crss -- VDS 7 VDD=30V VGS=10V 7 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 100 Switching Time, SW Time -- ns 4V S= 200 Ambient Temperature, Ta -- C VDS=10V 7 250 IT09600 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 20 yfs -- ID 10 300 0 --60 50 0 RDS(on) -- Ta 350 Ta=25C ID=4A Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 3 Ciss 3 2 100 7 Coss 5 Crss 2 3 1.0 0.1 2 2 3 5 7 2 1.0 3 5 10 IT09604 Drain Current, ID -- A 7 5 3 2 VDS=30V ID=8A 9 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 8 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 0 7 10 7 5 3 2 ASO <1 0 IDP=32A s 10 0 ID=8A DC Op 1 10 ms m s er 1.0 7 5 3 2 0.1 7 5 3 2 IT09605 s ati on 10 0m Operation in this area is limited by RDS(on). s Tc=25C Single pulse 0.01 0.01 2 3 IT09606 Rev.0 I Page 3 of 4 I www.onsemi.com 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT09607 2SK3492 PD -- Ta 1.0 0.8 No he at 0.6 PD -- Tc 20 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 sin k 0.4 0.2 0 15 10 5 0 0 20 40 60 80 100 120 140 Amibient Tamperature, Ta -- C 160 0 20 IT09608 40 60 80 100 120 140 Case Tamperature, Tc -- C 160 IT09609 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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