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VTS Process Photodiodes
VTS PROCESS
LOW CA PACITANCE, LARGE AREA PHOTODIODE
FEATURES
• Visible to IR spectral range
• Excellent QE - 400 to 1100 nm
• Guar antee d 400 nm respon se
• Respo nse @ 940 nm , 0.60 A/W, ty pi cal
• Useable with visible and IR LEDs
• Better than 1% linearity over fo ur decades of illumination
• Modera te sh unt resistance
• Low capacitance
• Fast response
• Choice of thr ee styles:
bare chip
6" fl ying leads
1" an ode bus s wi re
• Large area ce lls
• Solderable contacts
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is
ch aract er ized for use i n th e phot ovolt ai c (unbi as ed ) mo de. Th ei r
excellent speed and broadband sensitivity makes them ideal for
detecting light from a variety of sources such as LEDs, IREDs,
flashtubes, incandescent lamps, lasers, etc. Improved shunt
resistance minimizes amplifier offset and drift in high gain
systems. The solderable contact system on these photodiodes
provides a cost effective design solution for many applications.
Par t Num be ri ng Syste m For VTS Process Unm oun ted Ce lls
VTS__XX
Last two digits identify
ch ip si ze and pr o cess
VTS20XX
VTS30XX
VTS31XX
Bare chip with no wires or co atin g.
Chi p wi th red and bl ack A WG#30, in sul at ed, flexible wi res
soldered to the co nta ct s.
Chi p wi t h a buss wire soldered to the t opside contac t.
