QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Product Description The QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4 to 3.6 GHz. The device is a single stage matched power amplifier transistor. The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD3601 can deliver PSAT of 206 W at +50 V operation. RoHS compliant. Functional Block Diagram 2 Lead NI400 Package Product Features * * * * * * Operating Frequency Range: 3.4 - 3.6 GHz Operating Drain Voltage: +50 V Output Power (PSAT): 206 W Drain Efficiency: 57.9% Efficiency-Tuned P3dB Gain: 16.3 dB 2-lead, earless, ceramic flange NI400 package Applications * W-CDMA / LTE * Macrocell Base Station * Active Antenna Ordering Information Part No. Description QPD3601 200 W, 3.4 - 3.6 GHz, GaN Discrete QPD3601-EVB 3.4-3.6 GHz Evaluation Board Data Sheet Rev. D | Subject to change without notice. - 1 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Value / Range Parameter -10 V +55 V 42 dBm Gate Voltage (VG) Drain Voltage (VD) Maximum RF Input Power VSWR Mismatch, P1dB Pulse (20 % duty cycle, 100 width), T = 25 C Storage Temperature Parameter Min Gate Current (IG) Gate Voltage (VG) Drain Voltage (VD) Quiescent Current (IDQ) 10:1 -65 to +150C Operation of this device outside the parameter ranges given above may cause permanent damage. -3.3 Typ -2.7 50 360 Max Units 15 -2.5 mA V V mA Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Frequency Range Quiescent Current Gain P3dB Drain Efficiency Gate Leakage Conditions Min Typ 3400 P3dB P3dB VD = +50 V, VG = -5 V 15.0 52.5 51.0 -10.0 Max Units 3600 MHz mA dB dBm % mA 360 16.3 53.1 57.9 -3.5 Test conditions unless otherwise noted: VD = +50 V, IDQ = 360 mA, T = 25C, Pulsed (10 % duty cycle, 100 s width), on Class AB single-ended EVB at 3500 MHz Thermal and Reliability Information Parameter Test Conditions Thermal Resistance, Peak IR Surface Temperature at Average Power (JC) TCASE = 85C, TCH = 134C CW: PDISS = 51 W, POUT = 45 W Value Units 0.96 C/W Notes: 1. Thermal resistance measured to package backside. 2. Based on expected carrier amplifier efficiency of Doherty. 3. Pout assumes 20% peaking amplifier contribution of total average Doherty rated power. 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimate Data Sheet Rev. D | Subject to change without notice. - 2 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Single-Ended Evaluation Board Layout Bill of Materials Reference C1, C2, C3, C4 Des. C5 C6 C7 R1 Value Description 8.2 pF 10 F 10 F 220 F 10 Capacitor, 8.2 pF Capacitor, 10 F, 50 V Capacitor, 10 F, 100 V Capacitor, 220 F, electrolytic, 100 V Resistor, 10 , 1/8 W Data Sheet Rev. D | Subject to change without notice. Manuf. - 3 of 12 - ATC TDK TDK Cornell D. Vishay/Dale Part Number 600F8R2BW250T C5750X7R1H106K230KB C5750X7S2A106M230KB AFK227M2AR44T-F CRCW060310R0FKEA www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Single-Ended Evaluation Board Performance Plots 24 23 Gain vs. Output Power VG = -2.62 V, VD = +50 V, IDQ = 360 mA Pulsed CW: 10% duty cycle, 100 s width 70 Temp. = +25C 60 22 Drain Efficiency (%) 21 Gain (dB) 20 19 18 3400 MHz 17 3500 MHz 16 3600 MHz 15 14 Drain Efficiency vs. Output Power VG = -2.62 V, VD = +50 V, IDQ = 360 mA Pulsed CW: 10% duty cycle, 100 s width Temp. = +25C 50 3400 MHz 3500 MHz 40 3600 MHz 30 20 10 13 12 0 36 38 40 42 44 46 48 50 52 54 36 38 40 Output Power (dBm) 24 23 40 Temp. = +25C 35 22 Drain Efficiency (%) 21 Gain (dB) 20 19 18 17 3400 MHz 16 3500 MHz 15 3600 MHz 14 12 50 52 54 Drain Efficiency vs. Average Output Power VG = -2.619 V, VD = +50 V, IDQ = 360 mA 1C WCDMA, PAR = 10 dB @ 0.01% CCDF 30 Temp. = +25C 3400 MHz 3500 MHz 25 3600 MHz 20 15 10 34 36 38 40 42 44 46 48 32 34 Average Output Power (dBm) Peak Power vs. Average Output Power VG = -2.619 V, VD = +50 V, IDQ = 360 mA 1C WCDMA, PAR = 10 dB @ 0.01% CCDF 36 38 40 42 44 46 48 Average Output Power (dBm) -30 Temp. = +25C -31 ACPR vs. Average Output Power VG = -2.619 V, VD = +50 V, IDQ = 360 mA 1C WCDMA, PAR = 10 dB @ 0.01% CCDF Temp. = +25C -32 52 -33 51 3400 MHz 50 3500 MHz 49 3600 MHz ACPR (dBc) Peak Power at 0.01% CCDF (dBm) 48 0 32 53 46 5 13 54 44 Output Power (dBm) Gain vs. Average Output Power VG = -2.619 V, VD = +50 V, IDQ = 360 mA 1C WCDMA, PAR = 10 dB @ 0.01% CCDF 42 48 47 -34 3400 MHz -35 3500 MHz 3600 MHz -36 -37 -38 -39 46 -40 45 -41 44 -42 32 34 36 38 40 42 44 46 48 Average Output Power (dBm) 32 34 36 38 40 42 44 46 48 Average Output Power (dBm) Test conditions unless otherwise noted: VD = +50 V, IDQ = 360 mA, T = 25C, on Class AB single-ended EVB at 3500 MHz Data Sheet Rev. D | Subject to change without notice. - 4 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Single-Ended Evaluation Board Performance Plots Small Signal Gain vs. Frequency Return Loss vs. Frequency 0 20 -2 15 -4 S11, S22 (dB) S21 (dB) 25 10 5 0 -6 IRL ORL -8 -10 -5 -12 Temp. = +25C -10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Temp. = +25C -14 4.0 Frequency (GHz) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) Test conditions unless otherwise noted: VD = +50 V, IDQ = 360 mA, T = 25C, on Class AB single-ended EVB at 3500 MHz Data Sheet Rev. D | Subject to change without notice. - 5 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor RF Characterization - Power-Tuned Load Pull Performance Frequency (MHz) Source Impedance Load Impedance Gain @ P3dB (dB) P3dB (dBm) Drain Efficiency (%) 3400 3500 3600 11.50 - j15.57 18.05 - j10.41 13.17 - j1.70 7.76 - j0.96 6.01 - j0.73 6.01 - j0.73 16.2 16.6 16.7 53.2 53.3 53.4 53.3 55.4 60.4 Test conditions unless otherwise noted: VD = +50 V, IDQ = 360 mA, T = 25C, Pulsed 10% duty cycle, 100 s width) RF Characterization - Efficiency-Tuned Load Pull Performance Frequency (MHz) Source Impedance Load Impedance Gain @ P3dB (dB) P3dB (dBm) Drain Efficiency (%) 3400 3500 3600 11.50 - j15.57 18.05 - j10.41 13.17 + j1.70 5.38 - j9.66 6.47 - j6.83 8.05 - j5.51 19.0 19.2 18.7 50.7 51.7 52.0 65.9 67.2 69.9 Test conditions unless otherwise noted: VD = +50 V, IDQ = 360 mA, T = 25C, Pulsed 10% duty cycle, 100 s width) Data Sheet Rev. D | Subject to change without notice. - 6 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Load Pull Plots Test conditions unless otherwise noted: VD = +50 V, IDQ = 360 mA, T = 25C, Pulsed 10% duty cycle, 100 s width) Data Sheet Rev. D | Subject to change without notice. - 7 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Pin Configuration Pin Description Pin No. Label Description 1 2 3 (Backside Paddle) RF IN, VG RF OUT, VD RF/DC GND RF Input, Gate Bias RF Output, Drain Bias RF/DC Ground Data Sheet Rev. D | Subject to change without notice. - 8 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Package Marking and Dimensions Marking: Qorvo Logo Part Number - QPD3601 Date Code - YYWW Production Lot Number - MXXX Serial Number - ZZZ Notes: Unless Otherwise Specified; 1. Material: Package Base: Ceramic/Metal Package Lid: Ceramic 2. Package exposed metallization is NiAu plated. Au thickness is minimum 60 in. 3. Part is epoxy sealed. 4. Part meets industry NI400 footprint. 5. Body dimensions do not include lid shift or epoxy run out, which can be up to 0.020 per side. 6. Dimensions are in inches. General tolerance is 0.005. Data Sheet Rev. D | Subject to change without notice. - 9 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Tape and Reel Information - Carrier and Cover Tape Dimensions Feature Cavity Centerline Distance Cover Tape Carrier Tape Measure Length Width Depth Pitch Cavity to Perforation - Length Direction Cavity to Perforation - Width Direction Width Width Data Sheet Rev. D | Subject to change without notice. - 10 of 12 - Symbol Size (in) Size (mm) A0 B0 K0 P1 P2 F C W 0.417 0.419 0.181 0.630 0.079 0.559 1.004 1.260 10.60 10.65 4.60 16 2.00 14.20 25.50 32 www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Tape and Reel Information - Reel Dimensions Standard T/R size = 250 pieces on a 13" reel. Feature Flange Hub Measure Diameter Thickness Space Between Flange Outer Diameter Arbor Hole Diameter Key Slit Width Key Slit Diameter Symbol Size (in) Size (mm) A W2 W1 N C B D 12.992 1.504 1.291 4.016 0.512 0.079 0.787 330.0 38.2 32.8 102.0 13.0 2.0 20.0 Tape and Reel Information - Tape Length and Label Placement Notes: 1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A. 2. Labels are placed on the flange opposite the sprockets in the carrier tape. Data Sheet Rev. D | Subject to change without notice. - 11 of 12 - www.qorvo.com QPD3601 200 W, 50 V, 3.4-3.6 GHz GaN RF Power Transistor Handling Precautions Parameter Rating Standard ESD - Human Body Model (HBM) ESD - Charged Device Model (CDM) MSL - 260C Convection Reflow Class 1B Class C3 MSL3 ANSI/ESDA/JEDEC Standard JS001 ANSI/ESDA/JEDEC Standard JS002 IPC/JEDEC Standard J-STD-020 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260C maximum reflow temperature) soldering processes. The use of no-clean solder to avoid washing after soldering is recommended. Contact plating is NiAu. Au thickness is minimum 60 in. RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes: * * * * * Product uses RoHS Exemption 7c-II to meet RoHS Compliance requirements. Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: www.qorvo.com Email: customer.support@qorvo.com Tel: +1-844-890-8163 For technical questions and application information: Email: BTSApplications@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2018 (c) Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. D | Subject to change without notice. - 12 of 12 - www.qorvo.com