VSMB1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.5, 30-Jun-16 1Document Number: 81933
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 940 nm,
GaAlAs Double Hetero
DESCRIPTION
VSMB1940X01 is an infrared, 940 nm emitting diode in
GaAlAs Double Hetero technology with high radiant power
and high speed, molded in clear, untinted 0805 plastic
package for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half sensitivity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• 0805 standard surface-mountable package
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMB1940X01 6 ± 60 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB1940X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to Fig. 9, J-STD-020 Tsd 260 °C
Thermal resistance junction / ambient JESD 51 RthJA 270 K/W