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SD1433
RF POWER BIPOLAR TRANSISTORS
UHF MOBILE APPLICATIONS
REV. 2
FEATURES SUMMARY
■470 MHz
■12.5 VOLTS
■CLASS C
■EFFICIENCY 60%
■COMMON EMITTER
■POUT = 10 W MIN. WITH 8.0 dB GAIN
DESCRIPTION
The SD1433 is a Class C epitaxial silicon NPN pla-
nar transistor designed for driver applications in
the 450 - 512 MHz frequency range. This device
uses an emitter ballasted geometry specifically de-
signed for optimum stable power gain, maximum
efficiency and infinite VSWR.
Figure 1. Package
Figure 2. Pin Connection
Table 1. Order Codes
.280 4L STUD (M122)
epoxy sealed
Order Codes Marking Package Packaging
SD1433 SD1433 M122 BLACK CARDBOARDS
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Table 2. Absolute Maximum Ratings (Tcase = 25°C)
Table 3. Thermal Data
ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Table 4. Static
Table 5. Dynamic
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 16 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 2.5 A
PDISS Power Dissipation 58 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature – 65 to +150 °C
Symbol Parameter Value Unit
RTH(j-c) Junction-Case Thermal Resistance 3.0 °C/W
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
BVCES IC = 25 mA; VBE = 0 V 36 — — V
BVCEO IC = 20 mA; IB = 0 mA 16 — — V
BVEBO IE = 10 mA; IC = 0 mA 4.0 — — V
ICES VCE = 10 V; IE = 0 mA — — 3 mA
ICBO VCB = 15 V; IE = 0 mA — — 2 mA
hFE VCE = 5 V; IC = 1 A 10 — — —
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
POUT f = 470 MHz; PIN = 2.0 W; VCE = 12.5 V 10 — — W
GPf = 470 MHz; POUT = 10 W; VCE = 12.5 V 7 — — dB
COB f = 1 MHz; VCB = 12.5 V — 19 — pF
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SD1433
TYPICAL PERFORMANCE
Figure 3. Power Output vs Power Input Figure 4. Power Gain & Efficiency vs Power
Input
Figure 5. Power Output vs Frequency
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IMPEDANCE DATA
Figure 6. Typical Input Impedance Figure 7. Typical Collector Load Impedance
Table 6. Impedance Data
FREQ. ZIN (Ω)Z
CL (Ω)
470 MHz 1.5 – j 2.7 5.7 + j 1.5
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SD1433
TEST CIRCUIT
Figure 8. Test Circuit
Table 7. Test Circuit
C1, C2: 0.8pF Voltronics
C3: 18pF Chip Capacitor
C4, C5: AJ810
C6: 1000pF Chip Capacitor
C7: 0.01µF Disc Ceramic
C8, C9: 1000pF Unelco
C10: 10µF, 35V Electrolytic
L1: 0.47µH Molded Choke
L2: 2 Turns, #20 AWG, 1/8" I.D.
L3 2 Turns in Ferroxcube VK200/19-4B
Board Material: 3M-K6098, 1/16" Thick
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PACKAGE MECHANICAL
Table 8. M122 Mechanical Data
Figure 9. M122 Package Dimensions
Note: Drawing is not to scale.
Symbol millimeters inches
Min Typ Max Min Typ Max
A 25.65 26.80 1.010 1.055
B 5.59 5.84 0.220 0.230
C 6.86 7.24 0.270 0.285
D 0.08 0.18 0.003 0.007
E 2.97 3.48 0.117 0.137
F 14.53 0.572
G 3.30 0.130
H 6.22 6.48 0.245 0.255
I 16.26 0.640
J 4.45 5.51 0.175 0.217
K 6.99 7.24 0.275 0.285
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SD1433
REVISION HISTORY
Table 9. Revision History
Date Revision Description of Changes
November-1992 1 First Issue
28-May-2004 2 Stylesheet update. No content change.
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