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SD1433
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Table 2. Absolute Maximum Ratings (Tcase = 25°C)
Table 3. Thermal Data
ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Table 4. Static
Table 5. Dynamic
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 16 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 2.5 A
PDISS Power Dissipation 58 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature – 65 to +150 °C
Symbol Parameter Value Unit
RTH(j-c) Junction-Case Thermal Resistance 3.0 °C/W
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
BVCES IC = 25 mA; VBE = 0 V 36 — — V
BVCEO IC = 20 mA; IB = 0 mA 16 — — V
BVEBO IE = 10 mA; IC = 0 mA 4.0 — — V
ICES VCE = 10 V; IE = 0 mA — — 3 mA
ICBO VCB = 15 V; IE = 0 mA — — 2 mA
hFE VCE = 5 V; IC = 1 A 10 — — —
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
POUT f = 470 MHz; PIN = 2.0 W; VCE = 12.5 V 10 — — W
GPf = 470 MHz; POUT = 10 W; VCE = 12.5 V 7 — — dB
COB f = 1 MHz; VCB = 12.5 V — 19 — pF