TLP121
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP121
Office Machine
Programmable Controllers
AC / DCInput Module
Telecommunication
The TOSHIBA mini flat coupler TLP121 is a small outline coupler,
suitable for surface mount assembly.
TLP121 consists of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode.
l Collectoremitter voltage: 80V (min.)
l Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
l Isolation voltage: 3750Vrms (min.)
l UL recognized: UL1577, file no. E67349
Pin Configurations (top view)
6
4
3
1
1: Anode
3: Cathode
4: Emitter
6: Collector
Unit in mm
TOSHIBA 114C1
Weight: 0.09g
TLP121
2002-09-25
2
Current Transfer Ratio
Current Transfer
Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type Classification
*1
Min. Max.
Marking Of Classification
(None) 50 600 BLANK, Y, Y, G, G, B, B, GB
Rank Y 50 150 Y, Y
Rank GR 100 300 G, G
200 600 B, B
TLP121
Rank GB 100 600 G, G, B, B, GB
*1: Ex, rank GB: TLP121 (GB)
Note: Application type name for certification test, please use standard product type name, i, e.
TLP121 (GB): TLP121
TLP121
2002-09-25
3
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating IF / °C -0.7 (Ta 53°C) mA / °C
Pulse forward current IFP 1 (100µs pulse, 100pps) A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Collector power dissipation
derating (Ta 25°C) PC / °C -1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation
derating (Ta 25°C) PT / °C -2.0 mW / °C
Isolation voltage (Note 1) BVS 3750 (AC, 1min., R.H. 60%) Vrms
(Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC 5 48 V
Forward current IF 16 20 mA
Collector current IC 1 10 mA
Operating temperature Topr -25 85 °C
TLP121
2002-09-25
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V 10 µA
LED
Capacitance CT V = 0, f = 1 MHz 30 pF
Collector-emitter
breakdown voltage V(BR) CEO IC = 0.5 mA 80 V
Emitter-collector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 V
VCE = 48 V 10 100 nA
Collector dark current ICEO
VCE = 48 V, Ta = 85°C 2 50 µA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz 10 pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
50 — 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 — 600
%
— 60 —
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 —
%
IC = 2.4 mA, IF = 8 mA 0.4
— 0.2 —
Collector-emitter
saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB — — 0.4
V
Off-state collector current IC (off) V
F = 0.7V, VCE = 48 V 1 10 µA
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) CS VS = 0, f = 1 MHz 0.8 pF
Isolation resistance RS VS = 500 V, R.H. 60% 5×1010 1014
AC, 1 minute 3750
AC, 1 second, in oil 10000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 10000 Vdc
TLP121
2002-09-25
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Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr — 2 —
Fall time tf — 3 —
Turn-on time ton — 3 —
Turn-off time toff
VCC = 10 V, IC = 2 mA
RL = 100
— 3 —
µs
Turn-on time tON — 2 —
Storage time ts — 25
Turn-off time tOFF
RL = 1.9 k (Fig.1)
VCC = 5 V, IF = 16 mA
— 40
µs
Fig. 1 Switching time test circuit
VCC
VCE
IF
tON tOFF
ts
4.5V
0.5V
IF VCC
VCE
RL
TLP121
2002-09-25
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IFTa
Ambient temperature Ta (°C)
Allowable forward current
IF
(
mA
)
0
100
-20
80
60
40
20
0 20
40 60 80 120 100
PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
200
0
-20
160
120
80
40
0 20 40 60 80 120 100
DVF / DTa IF
Forward current IF (mA)
Forward voltage temperature
coefficient DVF / DTa (mV / °C)
-3.2
-0.4
0.1
-0.8
-2.8
-2.0
-1.6
-1.2
0.3
-2.4
1 5 50 0.5 3 10 30
IFP – DR
Duty cycle ratio DR
Pulse forward current
IFP (mA)
3000
10
3
30
1000
300
100
50
10-3
500
10-210-1 100 3 3 3
Pulse width 100ms
Ta = 25°C
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.6
50
5
1
0.5
0.8 1.0 1.2 1.4 1.6 1.8
30
10
3
0.3
Ta = 25°C
I
FP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
1.0 1.4 1.8 2.2 2.6 3.0
1
0.6
500
300
100
50
30
10
5
3
Pulse width 10ms
Repetitive
Frequency = 100Hz
Ta = 25° C
TLP121
2002-09-25
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IC – VCE
Collector–emitter voltage VCE (V)
Collector current IC (mA)
30
0
0
20
10
0.2 0.4 0.6 0.8 1.0
Ta = 25°C
IF = 50mA
40mA
30mA
20mA
10mA
5mA
2mA
ICEOTa
Ambient temperature Ta (°C)
Collector dark current ICEO (mA)
101
10-4
0 20 40 60 80
100 120
100
10-1
10-2
10-3
VCE = 48V
10V
5V
24V
IC / IF – IF
Forward current IF (mA)
Current transfer ratio IC / IF (%)
SAMPLE B
1000
30
0.3
50
300
100
0.5
500
3 10 100 1 5 30 50
Ta = 25°C
V
CE = 10V
V
CE = 5V
V
CE = 0.4V
SAMPLE A
Forward current IF (mA)
IC – IF
Collector current IC (mA)
100
0.1
0.3
0.3
50
10
1
0.5
0.5
30
3 10 100 1 5 50 30
3
5
V
CE = 10V
V
CE = 5V
V
CE = 0.4V
Ta = 25°C
SAMPLE A
SAMPLE B
50
0
0
40
30
20
10
2 4
6 8 10
Ta = 25°C
IC – VCE
Collector–emitter voltage VCE (V)
Collector current IC (mA)
20mA
50mA
30mA
15mA
10mA
PC
(
MAX
)
IF = 5mA
TLP121
2002-09-25
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VCE(sat)Ta
Ambient temperature Ta ()
Collector–emitter saturation
voltage VCE
(
sat
)
(V)
0.24
0
-40
0.20
0.16
0.12
0.04
-20 0 20 40 60 100 80
0.08
IF = 5mA
Ic = 1mA
Switching Time – RL
Load resistance RL (kW)
Switching time (ms)
1000
1
1
30
500
300
100
50
3 10 30
50 100
5
3
5
10
tOFF
tON
ts
Ta = 25°C
IF = 16mA
VCC = 5V
IC – Ta
Ambient temperature Ta ()
Collector current IC (mA)
10mA
5mA
0.5mA
1mA
100
0.1
-20
50
30
10
5
0 20
40 60 80
100
3
1
0.3
0.5
VCE = 5V
IF = 25mA
TLP121
2002-09-25
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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
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intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE