REJ03G1715-0100 Rev.1.00 Jul 10, 200 8
Page 1 of 7
BCR25RM-12LB
Triac
Medium Power Use
REJ03G1715-0100
Rev.1.00
Jul 10, 2008
Features
• IT (RMS) : 25 A
• VDRM: 600 V
• IFGTI, IRGTI, IRGTIII: 50 mA
• Viso: 2000 V
• The product gua rant ee d maximum junction
temperature of 150°C
• Insulated Type
• Planar Type
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
123
2
1
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak off-state voltage Note1 V
DRM 600 V
Non-repetitive peak off-state voltage Note1 V
DSM 720 V
Notes: 1. Gate open.
BCR25RM-12LB
REJ03G1715-0100 Rev.1.00 Jul 10, 200 8
Page 2 of 7
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 25 A Commercial frequency, sine full wave 360°
conduction, Tc = 96°C
Surge on-state current ITSM 250 A 50 Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusion I2t 313 A2s Value corresponding to 1 cycl e of half wave 50
Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction Temperature Tj –40 to +150 °C
Storage temperature Tstg –40 to +150 °C
Mass — 5.2 g Typical value
Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 3.0/5.0 mA Tj = 125°C /150°C, VDRM applied
On-state voltage VTM — — 1.5 V
Tc = 25°C, ITM = 40 A,
instantaneous measurement
Ι V
FGTΙ — — 2.0 V
ΙΙ V
RGTΙ — — 2.0 V
Gate trigger voltageNote2
ΙΙΙ V
RGTΙΙΙ — — 2.0 V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι I
FGTΙ — — 50 mA
ΙΙ I
RGTΙ — — 50 mA
Gate trigger curentNote2
ΙΙΙ I
RGTΙΙΙ — — 50 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125°C /150°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 1.7 °C/W Junction to caseNote3
Critical-rate of rise of off-state
commutation voltageNote4 (dv/dt)c 10/1 — — V/µs Tj = 125°C /150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –13 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR25RM-12LB
REJ03G1715-0100 Rev.1.00 Jul 10, 200 8
Page 3 of 7
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 50 Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 50 Hz)
Transient Thermal Impedance (°C/W)
10
0
10
1
10
2
10
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
100
200
300
400
10
0
10
1
10
2
Tj = 25°C
Tj = 150°C
210
1
10
2
10
3
10
4
537 2 537 2 537
5
3
2
10
1
10
0
10
–1
7
5
3
2
7
5
7
5
3
2
V
GT
= 2.0 V
V
GM
= 10 V
I
FGT I
, I
RGT I
, I
RGT III
P
G(AV)
=
0.5 W
P
GM
= 5 W
I
GM
= 2 A
V
GD
= 0.1 V
10
1
10
2
10
3
-40 0 40 80 120 160
Typical Example
10
1
10
2
10
3
-40 0 40 80 120 160
I
RGT III
I
RGT I
I
FGT I
Typical Example
0
0.6
0.8
1.0
1.4
1.0
1.6
1.4
1.2
1.8
2.0
10
-1
10
0
10
1
10
2
10
2
10
3
10
4
BCR25RM-12LB
REJ03G1715-0100 Rev.1.00 Jul 10, 200 8
Page 4 of 7
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
101
102
103
102
103
104
105
106
-40 0 40 80 120 160
-40 0 40 80 120 160
Typical Example
Typical Example
0
10
20
30
40
0 10203040
0
20
40
60
80
100
120
140
160
010203040
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
010203040 012345
360° Conduction
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
360° Conduction
Resistive,
inductive loads
120 120 t2.3
160 160 t2.3
100 100 t2.3
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
All fins are blackpainted
aluminum and greased
BCR25RM-12LB
REJ03G1715-0100 Rev.1.00 Jul 10, 200 8
Page 5 of 7
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
Commutation Characteristics (Tj = 150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
-40 0 40 80 120 160
-40 0 40 80 120 160
10
1
10
2
10
3
10
0
10
1
10
2
10
3
0
20
40
60
80
100
120
140
160
10
1
10
2
10
3
10
4
10
1
10
2
10
3
10
4
0
20
40
60
80
100
120
140
160
Distribution T
2+
, G
–
Typical
Example
T
2
–
, G
–
Typical
Example
T
2+
, G
+
Typical
Example
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Typical Example
Tj = 150°C
I Quadrant
III Quadrant
Typical Example
101
357 573223102
100
7
3
5
5
2
3
2
7
7
101
102
101
357 573223102
100
7
3
5
5
2
3
2
7
7
101
102
Main Voltage
Main Current
I
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Main Voltage
Main Current
I
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 125°C
IT = 4 A
τ = 500 µs
VD = 200 V
f = 3 Hz
Typical Example
Tj = 150°C
IT = 4 A
τ = 500 µs
VD = 200 V
f = 3 Hz
I Quadrant
I Quadrant
III Quadrant
III Quadrant
Minimum
Characteristics
Value
BCR25RM-12LB
REJ03G1715-0100 Rev.1.00 Jul 10, 200 8
Page 6 of 7
C
1
= 0.1 to 0.47µF
R
1
= 47 to 100Ω
C
0
= 0.1µF
R
0
= 100Ω
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Tria
c
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
330Ω
330Ω
330Ω
C
1
C
0
R
0
R
1
6Ω
6Ω
6V
6V
A
V
A
V
6Ω
6V A
V
Load
101
103
7
5
3
2
10025710
1
102
7
5
3
2
310
2
4
4
425734
IFGT I
IRGT III
IRGT I
Typical Example
BCR25RM-12LB
REJ03G1715-0100 Rev.1.00 Jul 10, 200 8
Page 7 of 7
Package Dimensions
0.66
15.6 ± 0.3 5.5 ± 0.3
3.2 ± 0.3
5.45 ± 0.5
4.0 ± 0.3
5.0 ± 0.3
2.7 ± 0.3
19.9 ± 0.3
21.0 ± 0.5
1.6
0.86
φ3.2
+ 0.4
– 0.2
2.6
0.86
5.45 ± 0.5
5.0 ± 0.3
+ 0.2
– 0.1
2.0 ± 0.3
0.9
+ 0.2
– 0.1
Previous Code
PRSS0003ZA-A
TO-3PFM / TO-3PFMV
MASS[Typ.]
5.2gSC-93
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
TO-3PFM
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Magazine (Tube) 30 Type name BCR25RM-12LB
Note : Please confirm the specification about the shipp ing in detail.
Notes:
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warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
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result of errors or omissions in the information included in this document.
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporat ion took over all the business of both
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subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
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characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
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Renesas Electronics p r oducts are no t subject to radiation resistance design. Please be sure to i mplement safety measur es to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
