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tm
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
August 2012
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1
QSE256, QSE257, QSE258, QSE259
Plastic Silicon OPTOLOGIC
®
Photosensor
Features
■
Bipolar silicon IC
■
Package type: Sidelooker
■
Medium wide reception angle, 50°
■
Package material and color: black epoxy
■
Daylight filter
■
High sensitivity
■
Direct TTL/LSTTL interface
Description
The QSE25x family are OPTOLOGIC® ICs which
feature a Schmitt trigger at output which provides hyster-
esis for noise immunity and pulse shaping. The basic
building block of this IC consists of a photodiode, a linear
amplifier, voltage regulator, Schmitt trigger and four out-
put options. The TTL/LSTTL compatible output can drive
up to ten TTL loads over supply currents from 4.5 to 16.0
Volts. The devices are marked with a color stripe for
easy identification.
Package Dimensions
0.25
0.51
4.38
4.62
GND Vcc
ø
Vout
1.45
1.71
2.34
2.74
1.17
1.37
0.52
0.76
12.7
MIN
1.14
1.40
4.35
5.85
2.15
2.35 1.39
1.65
5° TYP ON ALL SIDES
0.67
0.77
Note:
1. Dimensions for all drawings are in millimeters.
Part Number Definitions Color Code
QSE256 Totem-Pole, buffer output Red
QSE257 Totem-Pole, inverter output Yellow
QSE258 Open-collector, buffer output Green
QSE259 Open-collector, inverter output Blue
Input/Output Table
Part Number Light Output
QSE256 On HIGH
Off LOW
QSE257 On LOW
Off HIGH
QSE258 On HIGH
Off LOW
QSE259 On LOW
Off HIGH
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 2
Block Diagrams
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 2.50mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16" (1.6mm) minimum from housing.
Symbol Parameter Rating Unit
T
OPR
Operating Temperature -40 to +85 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2,3)
260 for 10 sec °C
I
O
Output Current 50 mA
V
CC
Supply Voltage 4.0 to 16 V
V
O
Output Voltage 35 V
P
D
Power Dissipation
(1)
100 mW
GND
REGULATOR
VOLTAGE V
CC
V
OUT
LA LA
REGULATOR
VOLTAGE
GND
V
OUT
V
CC
LA
REGULATOR
VOLTAGE
GND
V
OUT
V
CC
REGULATOR
VOLTAGE
LA
V
CC
V
OUT
GND
QSE256
Totem-Pole Output Buffer
QSE257
Totem-Pole Output Inverter
QSE258
Open-Collector Output Buffer
QSE259
Open-Collector Output Inverter
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 3
Electrical Characteristics
(T
A
= -40°C to +85°C, V
CC
= 4.5V to 5.5V)
Note:
5.
λ
= 880nm (AlGaAs).
Symbol Parameter Test Conditions Min. Typ. Max. Units
Ee(+) Positive Going Threshold
Irradiance
(5)
T
A
= 25°C 0.025 0.250 mW/cm
2
Ee(+)/Ee(-) Hysteresis Ratio 1.10 2.00
I
CC
Supply Current
(5)
Ee = 0 or 0.3mW/cm
2
5.0 mA
Peak to Peak Ripple which
will Cause False Triggering
f = DC to 50MHz 2.00 V
QSE256 (Buffer Totem Pole)
V
OH
High Level Output Voltage
(5)
Ee = 0.3mW/cm
2
, I
OH
= -10mA 2.4 V
V
OL
Low Level Output Voltage Ee = 0, I
OL
= 16mA 0.40 V
QSE257 (Inverter Totem Pole)
V
OH
High Level Output Voltage Ee = 0, I
OH
= -10mA 2.4 V
V
OL
Low Level Output Voltage
(5)
Ee = 0.3mW/cm
2
, I
OL
= 16mA 0.40 V
QSE258 (Buffer Open Collector)
I
OH
High Level Output Current
(5)
Ee = 0.3mW/cm
2
, V
OH
= 30V 100 µA
V
OL
Low Level Output Voltage Ee = 0, I
OL
= 16mA 0.40 V
QSE259 (Inverter Open Collector)
I
OH
High Level Output Current Ee = 0, V
OH
= 30V 100 µA
V
OL
Low Level Output Voltage
(5)
Ee = 0.3mW/cm
2
, I
OL
= 16mA 0.40 V
QSE256, QSE257
t
R
, t
F
Output Rise, Fall Times Ee = 0 or 0.3mW/cm
2
,
f = 10kHz, DC = 50%,
R
L
= 360
Ω
(5)
70 nS
t
PHL
, t
PLH
Propagation Delay 6.0 µS
QSE258, QSE259
t
R
, t
F
Output Rise, Fall Times Ee = 0 or 0.3mW/cm
2
,
f = 10kHz, DC = 50%,
R
L
= 360
Ω
(5)
100 nS
t
PHL
, t
PLH
Propagation Delay 6.0 µS
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
©1.0.1 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 4
Typical Performance Curves
(Sensor Coupled to QEE113 Emitter)
Fig. 4 Normalized Threshold Current vs. Supply Voltage
VCC - Supply Voltage (V)
0246810121416
IF - Normalized Threshold Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Normalized to:
Turn ON Threshold
VCC = 5 V
TA = 25°C
IF (ON)
IF (OFF)
Fig. 1 Output Voltage vs. Input Current (Inverters)
IF - Input Current (mA) IF - Input Current (mA)
012345
VO- Output Voltage (V)
VO- Output Voltage (V)
0
1
2
3
4
5
6
VOH
VOL
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
IF (ON)
IF (OFF)
Fig. 3 Threshold Current vs. Distance
d - Distance (mm)
02 46 8 101214
I
F(ON)
- Normalized Threshold Current
10
8
6
4
2
1.0
0.8
0.6
0.4
0.2
0.1
Fig. 2 Output Voltage vs. Input Current (Buffers)
012345
0
1
2
3
4
5
6
VOL
VOH
IF (OFF) IF (ON)
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
Normalized to:
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
Pulsed 100Hz
PW = 100μs
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
©1.0.1 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 5
Typical Performance Curves
(Sensor Coupled to QEE113 Emitter) (Continued)
Fig. 6 Low Output Voltage vs. Output Current
I
O
- Output Current (mA)
110
VOL- Output Voltage, Low (V)
0.01
0.1
1
V
CC
= 5 V
T
A
= 25°C
I
F
= 10 mA
Fig. 7 Response Time vs. Forward Current
I
F
- Forward Current (mA)
0 5 10 15 20
Response Delay Time (μs)
0
1
2
3
4
5
T
PHL
T
PLH
V
CC
= 5 V
R
L
= 270Ω
T
A
= 25°C
I
F
Pulsed
T = 10 ms
Duty Cycle = 50%
Fig. 5 Normalized Threshold Current
vs. Ambient Temperature
T
A
- Ambient Temperature (˚C)
-40 -20 0 20 40 60 80 100
IF - Normalized Threshold Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
F (ON)
I
F (OFF)
I
F (OFF)
I
F (ON)
Normalized to:
V
CC
= 5 V
T
A
= 25°C
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
©1.0.1 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 6
C2
R2
R1
1
C
.1 uf
bypass
5V
GND
Pulse
Generator
V = 5V
f = 10 KHz
d.c. = 50%
O
1
R = 360Ω
R = 180Ω
2
1
C = 15 pf
C = 20 pf
2stray wire capacitance
C and C include probe and
12
Fig. 8 Switching Speed Test Circuit
PLH
r
tPHL
t
50%
90% 10%
OH
V
OL
V10% 90%
50%
Output
VO
tf
t
0 mA
OH
PHL
0 mA
t
V
PLH
50%
t
10% 90%
90% 10%
r
t
f
t
Output
O
V
OL
V
Fig. 9 Switching Times Definition for Buffers Fig. 10 Switching Times Definition for Inverters
QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 7
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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