DATA SH EET
Product data sheet
Supersedes data of 1997 Mar 25
1999 Apr 12
DISCRETE SEMICONDUCTORS
2PB1219A
PNP general purpose transistor
handbook, halfpage
M3D187
1999 Apr 12 2
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB1219A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V)
Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
General purpose switc hing and amplification.
DESCRIPTION
PNP transistor in a SOT323; SC70 plastic package.
NPN complement: 2PD1820A.
MARKING
Note
1. = - : Made in Hong Kong.
= t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
2PB1219AQ DQ
2PB1219AR DR
2PB1219AS DS
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT323; SC70)
and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Note
1. Refer to SOT323; SC70 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 60 V
VCEO collector-emitter voltage open base 50 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 500 mA
ICM peak collector current 1 A
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 200 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 12 3
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB1219A
THERMAL CHARACTE RISTICS
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 20 V 100 nA
IE = 0; VCB = 20 V; Tj = 150 °C 5μA
IEBO emitter cut-off current IC = 0; VEB = 4 V 100 nA
hFE DC current gain IC = 150 mA; VCE = 10 V; note 1
2PB1219AQ 85 170
2PB1219AR 120 240
2PB1219AS 170 340
hFE DC current gain IC = 500 mA; VCE = 10 V; note 1 40
VCEsat collector-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1 600 mV
VBEsat base-emitt er saturation voltage IC = 300 mA; IB = 30 mA; note 1 1.5 V
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 15 pF
fTtransition freque ncy IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
2PB1219AQ 100 MHz
2PB1219AR 120 MHz
2PB1219AS 140 MHz
1999 Apr 12 4
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB1219A
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
1999 Apr 12 5
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB1219A
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document co ntains data from the objective specification for pro duc t
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to information
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y q uotation or contract, is believed to be accurate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 115002/00/03/pp6 Date of releas e: 1999 Apr 12 Document orde r number: 9397 750 05589