SAMSUNG SEMICONDUCTOR . INC LYE OD Besse oo073e1 O eae a 7 : i Juz ~ Zz) | MPS5172. NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR > * Coliector-Emitter Voltage: Vceo =25V TO-92 Collector Dissipation: P. (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25C) Characteristic Symbol Rating | Unit Collector-Base Voltage Vceo 25 v Collector-Emitter Voltage - Voeo 25 Vv Emittar-Base Voltage Veso , 5 Vv Collector Current le 100 mA Collector Dissipation Po 685 mw Junction Temperature Tj 150 07 Storage Temperature Tstg -55~150 C + * Refer to MPSA10 for graphs , 4. Emitter 2, Base 3. Collector ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage BV ceo Ic=10mA, ty =O 25 Vv Collector Cut-off Current Iceo Vee =25V, le =O 400 nA Collector Cut-off Current lees Vee =25V, Vac =O 100 nA Emitter Cut-off Current leso Vos =5V, Io =O 100 nA *DC Current Gain Hre Ig=10mA, Vee =10V 100 500 Collector-Emitter Saturation Voltage Vee (sat) Ic =10mA, lp =1MA 0.25 v Base-Emitter Saturation Voltage Vae (Sat) Ie =10mA, Ip =1MA 0.75 Vv Current Gain Bandwidth Product fr Ig =2mA, Vce=5V 120 MHz Base Emitter On Voltage Vae (on) Ie =10MA, Vee =10V 0.5 1.2 v * Pulse Test: Pulse Width = 300Hs, Duty Cycle < 2% ce SAMSUNG SEMICONDUCTOR 591