BAT60A Silicon Schottky Diode 2 High current rectifier Schottky diode 1 with extreme low VF drop For power supply For clamping and protection in low voltage applications For detection and step-up-conversion VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT60A white/3 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 10 V Forward current IF 3 A Surge forward current (t 10ms) IFSM 5 Total power dissipation, TS = 28 C Ptot 1350 mW Junction temperature Tj 150 C Storage temperature Tstg Value Unit -55 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 90 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-22-2001 BAT60A Electrical Characteristics at TA = 25 C, unless otherwise specified. Symbol Parameter Values min. typ. Unit max. DC characteristics Reverse current mA IR VR = 5 V - 0.3 - VR = 8 V - 0.6 2.6 - 18 - Reverse current IR VR = 8 V, TA = 80 C Forward voltage V VF IF = 10 mA 0.1 0.12 0.15 IF = 100 mA - 0.2 - IF = 1000 mA - 0.3 - - 20 - AC characteristics Diode capacitance CT pF VR = 5 V, f = 1 MHz 2 Jun-22-2001 BAT60A Forward current IF = f (TS ) Permissible Pulse Load RthJS = f(tp ) 10 2 3200 mA K/W RthJS IR 2400 2000 10 1 1600 1200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 800 400 0 0 20 40 60 80 120 C 100 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 s TS 10 0 tp Permissible Pulse Load Reverse current IR = f (VR) IFmax / IFDC = f(tp) TA = Parameter 10 2 10 -1 A 10 -2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -3 TA=25C IR IFmax / IFDC TA=85C 10 -4 10 -5 TA= -40C 10 -6 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 -7 0 0 2 4 6 8 V 12 VR tp 3 Jun-22-2001 BAT60A Forward current IF = f (VF ) TA = Parameter 10 0 A IF 10 -1 10 -2 -40C 25C 85C 125C 10 -3 10 -4 10 -5 0 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8 VF 4 Jun-22-2001