BAT60A
Jun-22-20011
Silicon Schottky Diode
High current rectifier Schottky diode
with extreme low VF drop
For power supply
For clamping and protection in low voltage
applications
For detection and step-up-conversion
VPS05176
12
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT60A white/3 1 = C 2 = A SOD323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR10 V
Forward current IF3 A
Surge forward current (t
10ms) IFSM 5
Total power dissipation, TS = 28 °C Ptot 1350 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
90 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAT60A
Jun-22-20012
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
VR = 5 V
VR = 8 V
-
-
-
2.6
mA
0.3
0.6
IR
Reverse current
VR = 8 V, TA = 80 °C IR- 18 -
Forward voltage
IF = 10 mA
IF = 100 mA
IF = 1000 mA
VF
0.1
-
-
0.12
0.2
0.3
0.15
-
-
V
AC characteristics
CT- 20 - pFDiode capacitance
VR = 5 V, f = 1 MHz
BAT60A
Jun-22-20013
Forward current IF = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
400
800
1200
1600
2000
2400
mA
3200
IR
Permissible Pulse Load RthJS = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Reverse current IR = f (VR)
TA = Parameter
02468V12
VR
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
A
IR
TA=25°C
TA= -40°C
TA=85°C
BAT60A
Jun-22-20014
Forward current IF = f (VF)
TA = Parameter
0 0.1 0.2 0.3 0.4 0.5 0.6 V0.8
VF
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40°C
25°C
85°C
125°C
