2N1131
SILICON
PNP TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1131 is a
silicon PNP transistor mounted in a hermetically
sealed package designed for medium current
switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage (RBE=10Ω) VCER 50 V
Collector-Emitter Voltage VCEO 35 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 0.6 A
Power Dissipation (TC=25°C) PD 2.0 W
Power Dissipation PD 0.6 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=30V 1.0 μA
ICBO V
CB=30V, TA=150°C 100 μA
ICBO V
CB=50V 100 μA
IEBO V
EB=2.0V 100 μA
BVCBO I
C=100μA 50 V
BVCER I
C=100mA, RBE=10Ω 50 V
BVCEO I
C=100mA 35 V
BVEBO I
E=100μA 5.0 V
VCE(SAT) I
C=150mA, IB=15mA 1.5 V
VBE(SAT) I
C=150mA, IB=15mA 1.3 V
hFE V
CE=10V, IC=5.0mA 15
hFE V
CE=10V, IC=150mA 20 45
fT V
CE=10V, IC=50mA, f=20MHz 50 MHz
Cob V
CB=10V, IE=0, f=100kHz 45 pF
Cib V
EB=0.5V, IC=0, f=100kHz 80 pF
TO-39 CASE
R0 (3-April 2013)
www.centralsemi.com
2N1131
SILICON
PNP TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R0 (3-April 2013)
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(001)
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