Parameter Symbol Value Unit
Reverse Voltage VR
TJ
75 V
Forward Current IO150 mA
Forward Power Dissipation PD200 mW
Junction Temperature 150 ℃
Storage Temperature TSTG -55~+150 ℃
Parameter Symbol Test conditions Min Max Unit
Reverse Breakdown Voltage V(BR) I
R= 100µA 75 V
Reverse Voltage Leakage Current IR
VR=75V
VR=20V
2.5
25
µA
nA
Forward Voltage VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Diode Capacitance CD V
R=0V f=1MHz 2 pF
Reveres Recovery Time trr
IF=IR=10mA
Irr=0.1×IR
RL=100Ω
4 ns
12
3
BAV99W
Fast Switching Diode
Fast switching speed
Features
■
■
■
SOT-323 package
RoHS compliant
■
Applications
High-speed switching in surface mounted circuits
High Conductance
■
Schematic Diagram
SOT-323
Maximum Ratings
(TA=25°C unless otherwise specified)
Electrical Characteristics
(TA=25°C unless otherwise specified)
1/4
3
2
1
Typical Characteristic Curves
BAV99W
Fast Switching Diode
2/4
Product Dimensions
Min. Max. Min. Max.
A 0.900 1.1500.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.000 0.035 0.039
b 0.200 0.400 0.008 0.016
c 0.080 0.150 0.003 0.006
D1.950 2.350 0.0770.093
E 1.150 1.350 0.045 0.053
E1 2.0002.450 0.078 0.096
e
e1 1.200 1.400 0.047 0.055
L
L1 0.260 0.460 0.010 0.018
θ0° 8° 0° 8°
0.525 REF. 0.021 REF.
Symbol Dimensions In Millimeters Dimensions In Inches
0.650 TYP. 0.026 TYP.
BAV99W
Fast Switching Diode
3/4
BAV99W
Fast Switching Diode
Order Information
RoHS compliant
3000pcs/Reel
Tape & Reel
KJGSOT-323
BAV99W
Device Package Marking Carrier Quantity HSF Status
4/4
Doc.USBAV99WxYS4.0
www.goodarksemi.com
