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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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DF005S2 - DF10S2 Bridge Rectifier Features Description * Maximum Surge Rating: IFSM = 85 A I2t = 30 A2Sec * Optimized VF: Typical 0.93 V at 2 A, 25C * DF10S Socket Compatible * Glass Passivated Junctions * Lead Free Compliant to EU RoHS 2002/95/EU Directives * Green Molding Compound: IEC61249 * Qualified with IR Reflow and Wave Soldering With the ever-pressing need to improve power supply efficiency, improve surge rating, improve reliability, and reduce size, the DFxS2 family sets a new standard in performance. The new design offers an improved surge rating of 85 A. This is especially important when striving to improve reliability and increase efficiency. High efficiency designs strive to reduce circuit resistance, which, unfortunately can result in increased inrush surge. As such higher surge current ratings can be required to maintain or improve reliability. The design also offers improved efficiency by achieving a 2 A VF of 1.1 V maximum at 25C. This lower VF also supports cooler and more efficient operation. ~ Finally, the DFxS2 achieves all this in a SDIP surface mount form factor, reducing board space and volumetric requirements vs. competitive devices. + IN OUT ~ - SDIP Ordering Information Part Number Top Mark Package Packing Method DF005S2 DF005S2 SDIP 4L Tape and Reel DF01S2 DF01S2 SDIP 4L Tape and Reel DF02S2 DF02S2 SDIP 4L Tape and Reel DF04S2 DF04S2 SDIP 4L Tape and Reel DF06S2 DF06S2 SDIP 4L Tape and Reel DF08S2 DF08S2 SDIP 4L Tape and Reel DF10S2 DF10S2 SDIP 4L Tape and Reel (c) 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.2 www.fairchildsemi.com DF005S2 - DF10S2 -- Bridge Rectifier June 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value DF005S2 DF01S2 DF02S2 DF04S2 DF06S2 DF08S2 DF10S2 Unit VRRM Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V VDC Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V IF(AV) Maximum Average Forward Current TA = 40C 2.0 A IFSM Peak Forward Surge Current 8.3 ms Single Half-Sine Wave Superimposed on Rated Load(JEDEC Method) 85 A TSTG Storage Temperature Range -55 to +150 C Operating Junction Temperature Range -55 to +150 C TJ Thermal Characteristics(1) Symbol RJA JL Parameter Conditions Max. Single-Die Measurement (Maximum Land Pattern: 13 x 13 mm) 60 Multi-Die Measurement (Maximum Land Pattern: 13 x 13 mm) 50 Multi-Die Measurement (Minimum Land Pattern: 1.3 x 1.5 mm) 100 Thermal Characterization Single-Die Measurement Parameter, Junction to Lead (Maximum and Minimum Land Pattern) 25 Thermal Resistance, Junction to Ambient Unit C/W C/W Note: 1. The thermal resistances (RJA & JL) are characterized with the device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Heating effect from adjacent dice is considered and only two dices are powered at the same time. F S S F F S S F Figure 2. Minimum Pads of 2 oz Copper Figure 1. Maximum Pads of 2 oz Copper (c) 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.2 www.fairchildsemi.com 2 DF005S2 - DF10S2 -- Bridge Rectifier Absolute Maximum Ratings Values are at TA = 25C unless otherwise noted. Symbol VF Parameter Conditions Min. Typ. Forward Voltage Drop per Bridge Element IF = 2.0 A IR DC Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3 ms) CJ Junction Capacitance (c) 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.2 Max. Unit 1.1 V TJ = 25C 3 TJ = 125C 500 30 VR = 4.0 V, f = 1.0 MHz 23 A A2S pF www.fairchildsemi.com 3 DF005S2 - DF10S2 -- Bridge Rectifier Electrical Characteristics 100 Reverse Current, IR[A] Forward Current, IF[A] 10 1 o TJ=150 C o 0.1 TJ=25 C o TJ=125 C 10 o o TJ=125 C TJ=150 C 1 o TJ=25 C 0.1 0.01 o TJ= -55 C 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 o TJ=-55 C 1.1 1E-3 200 1.2 400 Forward Voltage Drop, VF[V] Figure 3. Typical Instantaneous Forward Characteristics 1000 100 IFSM, Peak Forward Surge Current [A] Average Current [DC] 800 Figure 4. Typical Reverse Characteristics 2.0 1.5 Max Pad (Sigle die) 1.0 0.5 0.0 40 600 Reverse Voltage, VR[V] 60 80 100 120 140 160 180 90 80 70 60 50 40 30 20 10 0 200 o 0 20 40 60 80 100 Number of Cycles at 60 Hz Ambient Temperature [ C] Figure 5. Maximum Average Current vs. Ambient Temperature Figure 6. Peak Forward Surge Current vs. Number of Cycles at 60Hz 40 f = 1 MHz Juntion Capacitance, CJ[pF] 35 30 25 20 15 10 5 0 0 10 20 30 40 50 Reverse Voltage, VR[V] Figure 7. Typical Junction Capacitance (c) 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.2 www.fairchildsemi.com 4 DF005S2 - DF10S2 -- Bridge Rectifier Typical Performance Characteristics DF005S2 - DF10S2 -- Bridge Rectifier Physical Dimensions 3,1,' 237,21$/ 7239,(: &+$0)(5 237,21$/ /$1'3$77(515(&200(1'$7,21 6,'(9,(: (1'9,(: 127(6 $7+,63$&.$*('2(6127&21)25072 $1<5()(5(1&(67$1'$5' %$//',0(16,216$5(,10,//,0(7(56 &',0(16,216$5((;&/86,9(2)%8556 02/')/$6+$1'7,(%$53527586,216 *'5$:,1*),/(1$0(0.76',3$5(9 Figure 8. 4-LEAD, SDIP, 6.5 MM WIDE (c) 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.2 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) Power Supply WebDesigner PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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