SPECIFICATION (TENTATIVE) DEVICE NAME : Power MOSFET TYPE NAME : 2SK264101 SPEC. No. Fuji Electric Co,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Co_Lid. /i2 OWG.NO. Y 0257-R-004a1. Scope This specifies Fuji power MOSFET 2SK2641-01 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview TO-3P Outview See to 5/12 page 5. Absolute maximum ratings at Tc=25C (unless otherwise specified) Description Symbol | Characteristics | Unit Remarks Drain-source voltage Vos 500 V Continuous Drain current to + 10 A Pulsed drain current | Lopate. x= 40 A Gate-source voltage Vas 30 V Repetitive or non-repetitive | | ar 10 A Tchs 150C Avalanche energy Eas 229 mJ |See page 12/12 Maximum power dissipation Po 100 WwW Operating and storage Ten 150 Cc temperature range T ats -55 ~ +150 C *% L=d. 2mH, Vec=50V 6. Electrical characteristics at Tce=25C (unless otherwise specified) Static ratings Characteristics Description Symbo | Conditions Unit Min. Typ. Max, Drain-source [> =I1mA . breakdown voltage | BVoss | Ves=O0V 500 Vv Gate threshold lo =1mA . vol tage Ves(th) Vos=Ves 3.5 4,0 4.5 V Zero gate voltage | | oss Vos=500V/ Ten= 25C 10 500 A drain current Ves= OV | oss T en=125C 0.2 1.0 mA Gate-source Ves=t30V leakage current loss Vos= OV 10 100 na Drain-source on- ln = 5A state resistance Rosfon) i Ves=10 V 0.73 ; 0.90 Q Hi OWG.NO, Fuji Electric Co.Lid. Y 025T-R-003aDynamic ratings Characteristics Description Symbo | Conditions Unit Min, Typ. Max. Forward lo = 5A transconductance gfs Vos=25 V 2.5 5.0 S Input capacitance | Ciss 950 | 1450 pF.. Vos=25V Output capacitance | Coss Ves= OV 180 210 pF f =1MHz Reverse transfer capaci tance Crss 80 120 pF t d(on) 25 40 ns Turn-on time Vec=300V tr Ves= i0V 70 110 ns lo = 10A td(off) | Res= 100 70 110 ns Turn-off time t f 45 10 ns Reverse diode Characteristics Description Symba | Conditions Unit Min. Typ. Max. Avalanche L=100 4H, Ten=25C capability AY * See Figt and 2 10 A Diode forward r =2% | or on-vol tage Vso Ves=OV, Ten=25C i.1 1,65 V Reverse recovery te =lor time ter Ves=0V 450 ns -die/dt=100A/us Reverse recovery _ Ten=25C charge Q-- 5.5 Be . Thermal resistance Characteristics ; Description Symbo | Conditions Unit Min. Typ. Max. Rthen-c 1.25 | C/W Thermal resistance . Rthen-a 35.0 | C/W Fuji Electric Co.Ltd. DWG.NO, Ae Y 0257-R-003aFig. 1 Test circuit SIN L rh | 1 | * DUT L Vee S00 Vec=1/10 t Vos L= 100uH 1 pulse JF WPF TA 7 O77 Operating waveforms 0 Vas I av os 0 lp Fuji Electric Co,Ltd. OWG.NO. Ta. Y 025T-R-003aFUJI POWER MOS FET TYPE :? 2SK2641-01 oS: A 15.5max 4 50.2 2t0.2 5+0.1 = s5 DB 15 19.50.2 I N Lot No. See ~2gk2641 % Mm ,)o hm | O H | H oO };oO oy SS f SSSR d 14.540.2 1.64011 Thal if @ of Ol__2 . Lor || OS's" | . 5.450.2 : -5.4540.2 | {15 PRE-SOLDER "| T - DIMENSIONS ARE IN MILLIMETERS. (t+ 4 Oo @ o Note: 1. Guaranteed mark of avalanche ruggedness. CONNECTION ~@ GATE @) DRAIN @ SOURCE JEDEC : TO-247 EIAU + SC-65 Fuji Electric Co.,Ltd. DONG. NG. Y 02567-R-003aPower Dissipation PD=f (Tc) 100 | 80 | 60 fei PD [W] Q Ee eS ee 20 0 50 100 150 Te [C] safe operating area 10! ID [A] 10 fom 107! PoP bl PoE 10 10! 102 10 VDS [VJ Fuji Electric Co.,Ltd. 2 DWG. NO. Y 0257-R-003a| Typical output characteristics ID=f (VDS) :80us pulse test, Tc=25C feeebecs decay antes spore lates ccecernnrteepere 00 seh 1D [A] 10 faint 0 5 10 15 20 25 30 35 VDS [V] Typical transfer characteristic ID=F (VGS) :80us pulse test, VDS=25V, Tch=25C Bere [ocrrgeree fore deen ve i aor 10! = ID [A] 107! soe st Sa en =f SEES ESS See 107 Fuji Electric Co.,Ltd. | 2 12 Y 0257-R-003aTypical forward transconductance efs=f(ID):>80us pulse test, VDS=25V, Tch=25C efs [s] jets | i wi Por obie: 10" 10" 10 10! 1D [A] Typical dratn-source on-state resistance _ ROS (on) =f (1D) -80u s pulse test, Tc=25C VGS=... eee bowed cent beseese froveieedatabemdies diecbonnfies decchonnbescabenaefasonfe ote fase veesabaten 5-5. 5V-GV iG. ee e pope i i sdeeeee bee eaade RDS(on) [2] 8 Fuji Electric Co.,Ltd. 3 | 2 Y 0257-R-003a[ Drain-source on-state resistance RDS (on) =f (Tch) : }D=5A, VGS=10V RDS (on) [2] Tech [C] Gate threshold voltage VGS (th) =f (Toh) : 1D=1mA, VDS=VGS V@S (th) [V] 2.0 1.0 005 SOSSNSC*~CUOOS!;*;*;*;**SSO 2 ONG. NO. Fuji Electric Co.,Ltd. | 0257-R-003a Typical gate charge characteristic VGS=f (Qg 10A, Tc=25C er dervabee waebe dD eenepesndarnehenedoenebeartercepene these 100 Typical capacitances C=f (VDS) : VGS=0V, f=1MHz 1 Po? 107! ; 0 Fuji Electric Co.,Ltd. ; Aa Y 0257-R-003aForward characteristic of reverse of diode {F=f (VSD) :80us pules test, VGS=0V tenis tye. 00 02 04 06 08 +10 21.2 VSD [V] Transient thermal impedande Z7thch=f (t) parameter :D=t/T Fuji Electric Co.,Ltd. Y 0257-R-003a| Avalanche energy derating 950 Eas=f (starting Tch) :Vcc=50V, | ,y=10A 200 150 Eas [mJ] 100 50 . 50 400 Starting Tch [C] 150 ONG. NO. Fuji Electric Co.,Ltd. {2 2 Y 0257-R-O03a