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©2016 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
May 2016
TO-3PN
FGA40T65UQDF
650 V, 40 A Field Stop Trench IGBT
Features
Maximum Junction Temperature: TJ = 175oC
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ.) @ IC = 40 A
100% of the Parts tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 4th generation IGBTs offer superior conduction and
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
Applications
Induction Heating, MWO
Absolute Maximum Ratings
Symbol Description FGA40T65UQDF Unit
VCES Collector to Emitter Voltage 650 V
VGES Gate to Emitter Voltage 20 V
Transient Gate to Emitter Voltage 30 V
IC
Collector Current @ TC = 25oC 80 A
Collector Current @ TC = 100oC 40 A
ILM (1) Pulsed Collector Current @ TC = 25oC 120 A
ICM (2) Pulsed Collector Current 120 A
IF
Diode Forward Current @ TC = 25oC 40 A
Diode Forward Current @ TC = 100oC 20 A
IFM Pulsed Diode Maximum Forward Current 60 A
PD
Maximum Power Dissipation @ TC = 25oC 231 W
Maximum Power Dissipation @ TC = 100oC115 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 , Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
G
E
C
E
C
G
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
©2016 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
Thermal Characteristics
Symbol Parameter FGA40T65UQDF Unit
RJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.65 oC/W
RJC (Diode) Thermal Resistance, Junction to Case, Max. 1.75 oC/W
RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Qty per Tube
FGA40T65UQDF FGA40T65UQDF TO-3PN - - 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 - - V
BVCES /
TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 1mA - 0.52 - V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 40 mA, VCE = VGE 2.5 4.0 5.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V - 1.33 1.67 V
IC = 40 A, VGE = 15 V,
TC = 175oC- 1.5 - V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 7309 - pF
Coes Output Capacitance - 58 - pF
Cres Reverse Transfer Capacitance - 30 - pF
Switching Characteristics
Td(on) Turn-On Delay Time
VCC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
- 32 - ns
TrRise Time - 18 - ns
Td(off) Turn-Off Delay Time - 271 - ns
TfFall Time -11 - ns
Eon Turn-On Switching Loss - 989 - J
Eoff Turn-Off Switching Loss - 310 - J
Ets Total Switching Loss - 1299 - J
Td(on) Turn-On Delay Time
VCC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
- 30 - ns
TrRise Time - 22 - ns
Td(off) Turn-Off Delay Time - 298 - ns
TfFall Time - 16 - ns
Eon Turn-On Switching Loss - 1400 - J
Eoff Turn-Off Switching Loss - 553 - J
Ets Total Switching Loss - 1953 - J
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
©2016 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
QgTotal Gate Charge
VCE = 400 V, IC = 40 A,
VGE = 15 V
- 306 - nC
Qge Gate to Emitter Charge - 30 - nC
Qgc Gate to Collector Charge - 77 - nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VFM Diode Forward Voltage IF = 20 A TC = 25oC - 1.5 1.95 V
TC = 175oC - 1.39 -
Erec Reverse Recovery Energy
IF = 20 A, dIF/dt = 200 A/s
TC = 175oC - 115 -J
Trr Diode Reverse Recovery Time TC = 25oC - 89 - ns
TC = 175oC - 251 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 289 - nC
TC = 175oC - 1502 -
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
©2016 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
©2016 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
©2016 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
©2016 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
Figure 22.Transient Thermal Impedance of Diode
t
1
P
DM
t
2
t
1
P
DM
t
2
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
©2016 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
Mechanical Dimensions
Figure 23. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
©2016 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
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