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Page <1> V1.012/09/14
PNP Silicon Epitaxial
Planar Transistor
Features:
• Complementary NPN type available (MMST4401).
• Epitaxial planar die construction.
• Also available in lead free version.
Applications:
• General purpose application and switching application.
Maximum Rating @ Ta = 25°C unless otherwise specied
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Value Units
Collector-Base Voltage VCBO
-40
VCollector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO -5
Collector Current -Continuous IC600 mA
Collector Dissipation PC200 mW
Thermal resistance ,Junction to ambient RθJA 625 °C/W
Junction and Storage Temperature Tj,Tstg -55 to 150 °C
SOT-323
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = -100μA, IE = 0 -40
VCollector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB = 0 -40
Emitter-base breakdown voltage V(BR)EBO IE = -100μA, IC = 0 -5
Collector cut-off current ICEX VCE = -35V, VEB(OFF) = -0.4V
-0.1 μA
Base cut-off current IBL VCE = -35V, VEB(OFF) = -0.4V
DC current gain hFE
VCE = -1V, IC = -0.1mA
VCE= -1V, IC = -1mA
VCE = -1V, IC = -10mA
VCE = -2V, IC = -150mA
VCE = -2V,IC = 500mA
30
60
100
100
20
300
Collector-emitter saturation voltage VCE(sat) IC = - 150mA, IB = -15mA
IC = - 500mA, IB = -50mA
-0.4
-0.75 V
Base-emitter saturation voltage VBE(sat) IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
-0.95
-1.3 V
Collector
3
PNP
2
Emitter
Base
1
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Page <2> V1.012/09/14
PNP Silicon Epitaxial
Planar Transistor
Typical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Test conditions MIN MAX UNIT
Transition frequency fTVCE = -10V, IC = -1mA,
f = 1kHz 200 MHz
Collector output capacitance Cob VCB = -10V, IE = 0, f = 1MHz 8.5 pF
Delay time tdVCC = -30V, VBE(off) = -2V,
IC = -150mA, IB1 = -15mA
15
nS
Rise time tr20
Storage time tsVCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
225
Fall time tf30
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Page <3> V1.012/09/14
PNP Silicon Epitaxial
Planar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, Bipolar, PNP,
-40V, -600mA, SOT-323-3 MMST4403-7-F
Package Outline
Soldering Footprint
Dimensions : Millimetres
SOT
-323
Dim Min Max
A 1.8 2.2
B 1.15 1.35
C 1Typical
D 0.15 0.35
E 0.25 0.40
G 1.2 1.4
H 0.02 0.1
J 0.1Typical
K 2.1 2.3
All Dimensions in mm
