NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com -40 VOLTS 4.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW SOT-23 (TO-236) CASE 318 STYLE 6 COLLECTOR 3 Features AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring 1 BASE Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* 2 EMITTER MARKING DIAGRAM VA M G G 1 VA = Specific Device Code* M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar orientation and/or location may vary depending upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. ORDERING INFORMATION Device *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 5 1 Package Shipping NSS40200LT1G SOT-23 3,000 / Tape & Reel (Pb-Free) NSV40200LT1G SOT-23 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS40200L/D NSS40200LT1G, NSV40200LT1G MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -7.0 Vdc IC -2.0 A Collector Current - Peak ICM -4.0 A Electrostatic Discharge ESD Rating Collector Current - Continuous HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25C Derate above 25C PD (Note 1) Thermal Resistance, Junction-to-Ambient RqJA (Note 1) Total Device Dissipation TA = 25C Derate above 25C PD (Note 2) Thermal Resistance, Junction-to-Ambient RqJA (Note 2) Max Unit 460 3.7 mW mW/C 270 540 4.3 230 Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Note 3) 710 Junction and Storage Temperature Range TJ, Tstg -55 to +150 C/W mW mW/C C/W mW C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz. copper traces. 2. FR-4 @ 500 mm2, 1 oz. copper traces. 3. Thermal response. http://onsemi.com 2 NSS40200LT1G, NSV40200LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -40 - - -40 - - -7.0 - - - - -0.1 - - -0.1 250 220 180 150 - 300 - - - - - - - - - - -0.010 -0.080 -0.135 -0.135 -0.017 -0.095 -0.170 -0.170 - - -0.900 - - -0.900 100 - - Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = -7.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 4) (IC = -0.1 A, IB = -0.010 A) (Note 5) (IC = -1.0 A, IB = -0.100 A) (IC = -1.0 A, IB = -0.010 A) (IC = -2.0 A, IB = -0.200 A) VCE(sat) Base -Emitter Saturation Voltage (Note 4) (IC = -1.0 A, IB = -0.01 A) VBE(sat) Base -Emitter Turn-on Voltage (Note 4) (IC = -1.0 A, VCE = -2.0 V) VBE(on) V V V Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - - 325 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - - 62 pF td - - 60 ns Rise (VCC = -30 V, IC = 750 mA, IB1 = 15 mA) tr - - 120 ns Storage (VCC = -30 V, IC = 750 mA, IB1 = 15 mA) ts - - 400 ns Fall (VCC = -30 V, IC = 750 mA, IB1 = 15 mA) tf - - 130 ns SWITCHING CHARACTERISTICS Delay (VCC = -30 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 5. Guaranteed by design but not tested. http://onsemi.com 3 NSS40200LT1G, NSV40200LT1G 0.35 VCE(sat) = 150C IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.25 0.2 25C 0.15 -55C 0.1 0.05 0 0.001 0.01 0.1 1.0 -55C 0.2 0.15 0.1 0.05 10 0 0.001 0.01 0.9 10 1.1 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 150C (5.0 V) 1.0 0.9 -55C 0.8 25C 0.7 0.6 0.5 150C 0.4 0.3 10 IC/IB = 10 1.0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.0 VCE = -2.0 V -55C 0.8 0.7 25C 0.6 0.5 150C 0.4 0.3 0.2 0.1 1.0 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VCE, COLLECTOR-EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 1.0 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0.1 25C 0.25 IC, COLLECTOR CURRENT (A) 800 750 700 650 150C (2.0 V) 600 550 500 25C (5.0 V) 450 400 25C (2.0 V) 350 300 -55C (5.0 V) 250 200 -55C (2.0 V) 150 100 0.001 0.01 VCE(sat) = 150C IC/IB = 100 0.3 0.001 0.01 0.1 1.0 10 10 mA 0.8 VCE (V) IC = 500 mA 100 mA 300 mA 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1.0 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn-On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 4 100 NSS40200LT1G, NSV40200LT1G Cobo, OUTPUT CAPACITANCE (pF) 100 300 Cibo (pF) 275 250 225 200 175 150 125 100 0 1.0 2.0 3.0 5.0 4.0 90 80 70 60 50 40 30 20 6.0 Cobo (pF) 0 10 5.0 15 20 25 30 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 100 ms 10 ms 1s 1 ms 1.0 IC (A) Cibo, INPUT CAPACITANCE (pF) 325 0.1 Thermal Limit 0.01 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 5 100 35 NSS40200LT1G, NSV40200LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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