Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 5
1Publication Order Number:
NSS40200L/D
NSS40200LT1G,
NSV40200LT1G
40 V, 4.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
NSS40200LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23 (TO−236)
CASE 318
STYLE 6
http://onsemi.com
−40 VOLTS
4.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VA M G
G
VA = Specific Device Code*
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary
depending upon manufacturing location.
This is a representation only and actual
devices may not match this drawing exactly.
NSV40200LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
NSS40200LT1G, NSV40200LT1G
http://onsemi.com
2
MAXIMUM RATINGS (TA = 25C)
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO −40 Vdc
Collector-Base Voltage VCBO −40 Vdc
Emitter-Base Voltage VEBO −7.0 Vdc
Collector Current − Continuous IC−2.0 A
Collector Current − Peak ICM −4.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25C
Derate above 25C
PD (Note 1)
460
3.7
mW
mW/C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
C/W
Total Device Dissipation
TA = 25C
Derate above 25C
PD (Note 2)
540
4.3
mW
mW/C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
C/W
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Note 3) 710
mW
Junction and Storage Temperature Range TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
3. Thermal response.
NSS40200LT1G, NSV40200LT1G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−40 − −
Vdc
Collector−Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−40 − −
Vdc
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−7.0 − −
Vdc
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ICBO
− − −0.1
mAdc
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
− − −0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE 250
220
180
150
−
300
−
−
−
−
−
−
Collector−Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
−
−
−
−
−0.010
−0.080
−0.135
−0.135
−0.017
−0.095
−0.170
−0.170
V
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
− − −0.900
V
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
− − −0.900
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT100 − −
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 325 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 62 pF
SWITCHING CHARACTERISTICS
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) td− − 60 ns
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tr− − 120 ns
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) ts− − 400 ns
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tf− − 130 ns
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
5. Guaranteed by design but not tested.
NSS40200LT1G, NSV40200LT1G
http://onsemi.com
4
−55C
VCE(sat) = 150C
IC/IB = 10
25C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
101.00.10.010.001
0
0.05
0.1
0.15
0.2
0.25
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
101.00.10.010.001
100
150
300
350
500
700
750
800
101.00.10.010.001
0.3
0.4
0.5
0.6
0.7
0.8
1.0
1.1
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
101.00.10.010.001
0.1
0.2
0.3
0.4
0.5
0.8
0.9
1.0
100101.00.10.01
0
0.2
0.4
0.6
0.8
1.0
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE EMITTER TURN−ON
VOLTAGE (V)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
IC/IB = 100
25C−55C
IC, COLLECTOR CURRENT (A)
101.00.10.010.001
0
0.05
0.1
0.15
0.2
0.35
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat) = 150C
0.25
0.3
650
600
550
200
250
400
450
0.9
150C (5.0 V)
150C (2.0 V)
25C (5.0 V)
25C (2.0 V)
−55C (5.0 V)
−55C (2.0 V)
25C
−55C
150C
0.6
0.7 25C
−55C
150C
VCE = −2.0 V VCE (V) IC = 500 mA
300 mA
10 mA
100 mA
IC/IB = 10
NSS40200LT1G, NSV40200LT1G
http://onsemi.com
5
10 ms
100 ms
1 s
Thermal Limit
1 ms
Cibo (pF)
Figure 7. Input Capacitance Figure 8. Output Capacitance
VEB, EMITTER BASE VOLTAGE (V)
4.03.02.01.00
125
150
300
325
Figure 9. Safe Operating Area
VCE (Vdc)
1001.00.10.01
0.01
0.1
10
Cibo, INPUT CAPACITANCE (pF)
IC (A)
VCB, COLLECTOR BASE VOLTAGE (V)
3515100
20
70
50
80
100
Cobo, OUTPUT CAPACITANCE (pF)
90
6.05.0
200
225
250
275
175
Cobo (pF)
5.0 302520
1.0
10
60
100
30
40
NSS40200LT1G, NSV40200LT1G
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81−3−5817−1050
NSS40200L/D
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