SOD-523
GSRB751S-40
Schottky Barrier Diode
Features
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Small surface mounting type
Low reverse current and low forward voltage
High reliability
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Schematic Diagram
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter Symbol Limit Unit
Peak Reverse Voltage VRM 40 V
DC Reverse Voltage VR 30 V
Mean Rectifying Current IO 30 mA
Non-Repetitive Peak Forward Surge
Current@t=8.3ms IFSM 200 mA
Junction Temperature TJ125°C
Storage Temperature TSTG -55 to +150 °C
Power Dissipation PD 150mW
Thermal Resistance Junction to Ambient RθJA 667 °C/W
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit
Forward Voltage VF 0.37 V
Reverse Current IR 0.5
μA
Capacitance between Terminals CT 2 pF
Conditions
IF=1mA
VR=30V
VR=1V,f=1MHZ
-
-
-
-
-
-
0 5 10 15 20
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125
0
50
100
150
200
0.0 0.2 0.4 0.6 0.8 1.0
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35
1E-3
0.01
0.1
1
10
Ta=25℃
f=1MHz
Capacitance Characteristics
REVERSE VOLTAGE VR (V)
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Power Derating Curve
POWER DISSIPATION PD (mW)
AMBIENT TEMPERATURE Ta ( )
℃
Forward Characteristics
Ta=100 oC
T
a
=25
o
C
FORWARD CURRENT IF (mA)
FORWARD VOLTAGE VF (V)
Reverse Characteristics
Ta=100 oC
Ta=25 oC
REVERSE CURRENT IR (uA)
REVERSE VOLTAGE VR (V)
GSRB751S-40
Schottky Barrier Diode
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Typical Characteristic Curves
0LQ 0D[ 0LQ 0D[
A 0.510 0.770 0.020 0.031
A1 0.500 0.700 0.020 0.028
b 0.250 0.350 0.010 0.014
c 0.080 0.150 0.003 0.006
D 0.750 0.850 0.030 0.033
E 1.100 1.300 0.043 0.051
E1 1.500 1.700 0.059 0.067
E2
L 0.010 0.070 0.001 0.003
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7° REF
0.200 REF 0.008 REF
Package Outline Dimensions SOD-523
GSRB751S-40
Schottky Barrier Diode
Suggested Pad Layout
Order Information
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www.goodarksemi.com Doc.GSRB751S-40xSC2.1
GSRB751S-40 SOD-523
Device Package Marking Carrier Quantity HSF Status
5Tape & Reel 8000pcs / Reel RoHS compliant