Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC = 10 mA, IB = 0 45 V
V(BR)CES Collector-Base Breakdown Voltage IC = 10 µA60 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 60 V
V(BR)EBO Emitter-Bas e Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICES Collector-Cutoff Current VCE = 45 V
VCE = 45 V, TA = 150 °C20
10 nA
µA
IEBO Emitter-Cutoff Current VEB = 4.0 V 20 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 300 mA, VCE = 1.0 V
120
160
60 400
VCE(sat)Collector-Emitter Saturation Voltage IC = 300 mA, IB = 30 mA 1.5 V
VBE(sat)Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 2.0 V
SMALL SIGNAL CHARACTERISTICS
fTCurre nt Ga in - Bandwidth Product IC = 20 mA, VCE = 10 V,
f = 100 MHz 100 MHz
Cobo Ouput Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 18 pF
Cibo Input Capacitance VEB = 0.5 V, IE = 0, f = 1.0 MHz 105 pF
NF Noise Figure IC = 0.2 mA V, VCE = 5.0 V,
RS = 1.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
10 dB
Symbol Parameter Test Conditions Min Max Units
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 T r=1 1 1.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
Typical Characteristics
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICA L PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 4 0 ° C
V = 5V
CE
C o ll ecto r -Emitter Satur ati o n
Vo ltag e vs C o llector Cur rent
110100500
0
0.1
0.2
0.3
0.4
0.5
I - C OLLEC TOR C UR RENT (mA)
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
β= 10
25 °C
- 40 °C
125 °C
BCW68G
PNP General Purpose Amplifier
(continued)