(SP OPTEK Product Bulletin JANTX, JANTXV, 2N2222AUA September 1996 Surface Mount NPN General Purpose Transistor Types TX, . TXV, 2N2222AUA .225 (5.72) -075 (1.91) PIN 1 .155 (3.94) IDENTIFIER V45 (360) .028 (0.71) L048 (1.22) 3 PL 022 (0.56) .032 (0.81) |. ef COLLECTOS EMITTER = 1 2 [- = > Toss (1.40) BASE 088 (2.24) 045 (1.14) 3 .072 (1.83) DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Ceramic surface mount package e Small package to minimize circuit board area e Hermetically sealed Qualification per MIL-PRF-19500/255 Description The TXITXV2N2222AUA is a hermetically sealed ceramic surface mount general purpose switching transistor. The four pin ceramic package is ideal for designs where board space and device weight are important design considerations. The UA suffix denotes the 4 terminal leadiess chip carrier package, type A per MIL-PRF-19500/255. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is Vcp = 30 V. Pp = 400 mW, Ta = 25C, t= 80 hrs. Refer to MIL-PRF-19500/255 for complete requirements. In addition , the TX and TXV versions receive 100% thermal response testing. When ordering parts without processing, do not use a JAN prefix. Absolute Maximum Ratings (Ta = 25 C uniess otherwise noted) Collector-Base Voltage. 2.06... eee eect e ence eee eenaaee 75V Collector-Emitter Voltage... 00. cc cece eect eee e eect eeenvees 50V Emitter-Base Voltage ......0 0.0. ccc eee eee e eens 6.0V Collector Current-Continuous. 0.0.0.0 0 0.0. cece cece eee eee eaae 800 mA Operating Junction Temperature (Ty) ........ 0c ccc eee ae -65 C to +200 C Storage Junction Temperature (Tsig)... 0.0.0. eee eee -65 C to +200C Power Dissipation @ Ta= 25C... ccc ccc ccc ene cuceeceuaeeas 0.5W Power Dissipation @ To =25 Co... oie eee e cece eeeeeeees 1.16 Ww") Soldering Temperature (vapor phase reflow for 30 sec.) ................. 215C Soldering Temperature (heated collet for 5 sec.)............ eee 260 C Notes: (1) Derate finearly 6.6 mW? C above 25 C. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-4 (972) 323-2200 Fax (972) 323-2396Types TX, Electrical Characteristics (Ta = 25 C unless otherwise noted) TXV, 2N2222AUA SYMBOL PARAMETER | min | MAX/UNITS| TEST CONDITION Off Characteristics ee Viericao | Collector-Base Breakdown Voltage 7S Ic = 10 pA, le =0 Visryceo | Collector-Emitter Breakdown Voltage 50 Ilo=10 mA, la=0 . _ | Viereno Emitter-Base Breakdown Voltage 6.0 Vv le= 10UA, le = 0 Icpo Collector-Base Cutoff Current 10 nA Ves = 60 V, le = eee 10 | pA |Vcp=60V, le =0, Ta= 150C lesa Emitter-Base Cutoff Current 10 nA . Ves =4V Ic=0 Ices Collector-Emitter Cutoff Current 50 nA Vee =50V - ee |i On Characteristics 3 | hre Forward-Current Transfer Ratio 50 | - Vee =10V,lc=0.1 mA - 75 325. - Voce =10V,le=1.0 mA | 100 - Vce=10V, lo=10mA | 100 | 300 - |VcE=10V, lc = 150 mA?) 30 Voe = 10 V, lo = 500 mA! 35 Voce =10V, lo = 10 mA, Ta =-58C VWoersaT) | Collector-Emitter Saturation Voltage : 0.3 Vo jic = 150 mA, Ip = 15 mal?) 1.0 | V_|lc=800mA, Ip = 50 ma) Veeisat) |Base-Emitter Saturation Voltage 06 | 12 | V_ |ic=150mA,Ip=15 ma 2.0 | V_ |Ic=500 mA, lp =50 ma! Small-Signal Characteristics - a hte Small Signal Forward Current Transfer 50 - Voce =10V, lo =1.0 mA, f= 1.0 kHz Ratio | ; ; Ihe Small Signal Forward Current Transfer 2.5 - Vee=20V, Io = 20 mA, f= 100 MHz Ratio i | ; Cobo Open Circuit Output Capacitance | 8.0 PF |Vea=10V, 100 kHz =f<1.0 MHz Ciba Input Capacitance (Output Open) - 25 pF |Vep=0.5 V, 100 kHz