2SK2763-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 800 4 16 35 4 358 100 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=41.1mH, Vcc=80V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=35V VDS=0V ID=2.0A VGS=10V Min. 800 3.5 Tch=25C Tch=125C ID=2.0A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=4A VGS=10V 1.0 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. 4.0 10 0.2 10 3.19 2.0 450 75 40 20 45 50 30 Max. 4.5 500 1.0 100 4.0 680 120 60 30 70 80 50 4 1.0 700 5.0 1.5 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.25 35.0 Units C/W C/W 1 2SK2763-01 FUJI POWER MOSFET Characteristics 120 Safe operating area Power Dissipation PD=f(Tc) ID=f(VDS):D=0.01,Tc=25C 100 t=0.01 s 10 1 1 s 80 ID [A] PD [W] 10s DC 60 100s 10 40 0 1ms t D= 20 t T 10ms T 0 0 50 100 10 150 100ms -1 10 0 10 1 10 o Tc [ C] 10 3 VDS [V] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 7 10 VGS=20V 1 10V 6 10 ID [A] 7V 3 e m m 2 nd 6.5V 1 eco 0 n sig ew n for 4 . de 8V 5 ID [A] 2 -1 10 6V 0 0 5 10 tr No 15 20 5.5V 5V 25 30 -2 10 35 0 1 2 3 4 5 6 7 8 9 10 VGS [V] VDS [V] Typical forward transconductance Typical drain-source on-state resistance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 25 VGS= 5V 5.5V 6V 6.5V 7V 20 RDS(on) [ ] 1 gfs [s] 10 10 0 15 10 8V 10V 5 10 20V 0 -1 10 -1 10 0 10 1 0 ID [A] 1 2 3 4 5 6 7 8 ID [A] http://store.iiic.cc/ 2 2SK2763-01 FUJI POWER MOSFET Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS Drain-source on-state resistance RDS(on)=f(Tch):ID=2A,VGS=10V 12 6.0 10 5.0 8 4.0 VGS(th) [V] RDS(on) [ ] max. max. 6 typ. 4 typ. min. 3.0 2.0 2 1.0 0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic Typical capacitances C=f(VDS):VGS=0V,f=1MHz VGS=f(Qg):ID=4A,Tch=25C 10n 40 800 Vcc=640V 600 30 20 for C [F] 400V 400 VGS [V] nd e mm 15 300 n sig w ne Ciss 100p 100 0 Coss 10 200 160V 0 ot N 20 40 60 o c e r 80 Crss 5 10p 0 100 10 -2 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Avalanche energy derating Forward characteristic of reverse of diode IF=f(VSD):80s Pulse test,VGS=0V Eas=f(starting Tch):Vcc=80V,IAV=4A 400 350 10 1 300 o Tch=25 C typ. 250 10 10 0 Eas [mJ] IF [A] VDS [V] 1n 25 500 . de 35 Vc c= 40 16 64 0V 0V 0V 700 200 150 -1 100 50 10 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 VSD [V] 50 100 150 o Starting Tch [ C] http://store.iiic.cc/ 3 2SK2763-01 10 1 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 0 Zthch-c [K/W] 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 t D= -2 10 -5 10 0.01 0 t T T 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4