Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 100V
▼ Small Package Outline RDS(ON) 5Ω
▼ Surface Mount Device ID0.25A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3180 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Storage Temperature Range
Total Power Dissipation 0.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.005
Continuous Drain Current3, VGS @ 10V 0.2
Pulsed Drain Current11
Gate-Source Voltage +20
Continuous Drain Current3, VGS @ 10V 0.25
Parameter Rating
Drain-Source Voltage 100
1
AP2320GN-HF
Halogen-Free Product
201211145
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial
applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.25A - - 5 Ω
VGS=4.5V, ID=0.2A - - 9 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=0.2A - 0.2 - S
IDSS Drain-Source Leakage Current VDS=100V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=0.4A - 2 3.2 nC
Qgs Gate-Source Charge VDS=80V - 0.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.5 - nC
td(on) Turn-on Delay Time2VDS=50V - 3 - ns
trRise Time ID=0.4A - 7 - ns
td(off) Turn-off Delay Time RG=3.3Ω- 9.5 - ns
tfFall Time VGS=10V - 4.5 - ns
Ciss Input Capacitance VGS=0V - 32 51 pF
Coss Output Capacitance VDS=25V - 9.5 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=0.4A, VGS=0V - - 1.5 V
trr Reverse Recovery Time IS=1A, VGS=0V, - 27 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 28 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ;400℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2320GN-HF
AP2320GN-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
0.2
0.4
0.6
0.8
1
0481216
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
7.0V
6.0V
5.0V
VG=4.0V
0
0.2
0.4
0.6
0.8
1
0481216
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
9.0V
8.0V
7.0V
VG=6.0V
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=0.25A
VG=10V
0.1
1
10
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.4
0.6
0.8
1.0
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th)
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
I
D=250uA
AP2320GN-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
0123
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=0.4A
VDS =80V
1
10
100
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
10
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 400℃/W
tT
0.02
Operation in this
area limited by
RDS(ON)
