NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications. * Q1 RDS(ON) = 2 @ VGS = 10 V RDS(ON) = 4 @ VGS = 4.5 V 0.51 A, 60V. * Q2 -0.34 A, 60V. RDS(ON) = 5 @ VGS = -10 V RDS(ON) = 7.5 @ VGS = -4.5 V * High saturation current * High density cell design for low RDS(ON) * Proprietary SuperSOTTM -6 package: design using copper lead frame for superior thermal and electrical capabilities D2 Q2(P) S1 D1 4 3 5 2 G2 SuperSOT TM -6 Q1(N) G1 Absolute Maximum Ratings Symbol 1 6 S2 TA=25oC unless otherwise noted Q1 Q2 Units VDSS Drain-Source Voltage Parameter 60 -60 V VGSS Gate-Source Voltage 20 20 ID Drain Current 0.51 -0.34 1.5 -1 - Continuous (Note 1a) - Pulsed Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) 0.7 A W -55 to +150 C (Note 1a) 130 C/W (Note 1) 60 Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .01C NDC7001C 7'' 8mm 3000 2002 Fairchild Semiconductor Corporation NDC7001C Rev B (W) http://store.iiic.cc/ NDC7001C May 2002 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 A VGS = 0 V, ID = -250 A VGS = 0 V, ID = 250 A,Ref. to 25C ID = -250 A,Ref. to 25C VDS = 48 V, VGS = 0 V VDS = -48 V, VGS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V BVDSS Drain-Source Breakdown Voltage BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR On Characteristics VGS(th) VGS(th) TJ RDS(on) V 60 -60 67 -57 mV/C 1 -1 A All 100 nA All -100 nA V (Note 2) Q1 VDS = VGS, ID = 250 A 1 2.1 2.5 Q2 VDS = VGS, ID = -250 A -1 -1.9 -3.5 Gate Threshold Voltage Temperature Coefficient Q1 ID = 250 A,Referenced. to 25C -3.8 Q2 ID = -250 A,Ref. to 25C 3.2 Static Drain-Source On-Resistance Q1 VGS = 10 V, ID = 0.51 A VGS = 4.5 V, ID = 0.35 A VGS = 10 V, ID = 0.51 A,TJ=125C Q2 VGS = -10 V, ID = -0.34 A VGS = - 4.5 V,ID = -0.25 A VGS = -10V,ID= -0.34A,TJ=125C 1 2 1.7 1.2 1.5 1.9 Q1 VGS = 10 V Q2 VGS = -10 V VDS = -10 V Q1 VDS = 10 V Q2 VDS = -10 V ID = -0.34A 700 For Q1: VDS = 25 V, 20 66 11 13 4.3 6 Gate Threshold Voltage ID(on) On-State Drain Current gFS Forward Transconductance VDS = 10 V ID = 0.51 A mV/C 2 4 3.5 5 7.5 10 1.5 A -1 380 mS Dynamic Characteristics Ciss Coss Crss RG Q1 Q2 Q1 Output Capacitance Q2 Reverse Transfer Capacitance Q1 Q2 Input Capacitance Gate Resistance Q1 VGS = 0 V f = 1.0MHz For Q2: VDS = -25 V, VGS = 0 V f = 1.0MHz VGS = 15 mV, f = 1.0 MHz Q2 Switching Characteristics td(on) tr Turn-On Delay Time Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge pF pF pF 11.2 11.2 (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 For Q1: VDS =25 V, VGS= 10 V, I DS= 1 A RGEN = 6 For Q2: VDS =-25 V, I DS= -1 A VGS= -10 V, RGEN = 6 For Q1: VDS =25 V, VGS= 10 V, For Q2: VDS =-25 V, VGS= -10 V, I DS= 0.51 A RGEN = 6 I DS= -0.35 A RGEN = 6 2.8 3.2 8 10 14 8 4 1 1.1 1.6 0.2 0.3 0.4 0.3 5.6 6.4 16 20 26 16 8 2 1.5 2.2 ns ns ns ns nC nC nC NDC7001C Rev B (W) http://store.iiic.cc/ NDC7001C Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage trr Qrr Q1 Q2 0.51 -0.34 A V Q1 VGS = 0 V, IS = 0.51 A (Note 2) 0.8 1.2 Q2 VGS = 0 V, IS = -0.34 A (Note 2) -0.8 -1.4 Diode Reverse Recovery Time Q1 IF = 0.51 A, diF/dt = 100 A/s 18 Q2 IF = -0.34 A, 16 Diode Reverse Recovery Charge Q1 IF = 0.51 A, diF/dt = 100 A/s 16 Q2 IF = -0.34 A, 11 diF/dt = 100 A/s diF/dt = 100 A/s nS nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 130 C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140C/W when mounted on a .005 in2 pad of 2 oz copper c) 180C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% NDC7001C Rev B (W) http://store.iiic.cc/ NDC7001C Electrical Characteristics NDC7001C Typical Characteristics: N-Channel 1.5 2.4 8.0V 1.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 6.0V 0.9 5.0V 0.6 4.5V 4.0V 0.3 0 2.2 VGS = 4.5V 2 1.8 5.0V 1.6 6.0V 1.4 7.0V 8.0V 1.2 10V 1 0.8 0 2 4 6 8 0 0.3 0.6 0.9 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 6 ID = 0.26A ID = 0.51A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 1.6 1.4 1.2 1 0.8 0.6 0.4 5 4 TA = 125oC 3 2 TA = 25oC 1 0 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 1.5 VGS = 0V 25oC 125oC IS, REVERSE DRAIN CURRENT (A) TA =-55oC VDS = 5V 1.2 ID, DRAIN CURRENT (A) 1.2 0.9 0.6 0.3 0 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 1 3 5 7 9 0.2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDC7001C Rev B (W) http://store.iiic.cc/ 60 10 VDS = 25V VGS, GATE-SOURCE VOLTAGE (V) ID = 0.51A f = 1MHz VGS = 0 V 30V 50 CAPACITANCE (pF) 8 48V 6 4 40 30 CISS 20 COSS 2 10 0 0 CRSS 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 10 20 Figure 7. Gate Charge Characteristics. 50 60 10 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 40 Figure 8. Capacitance Characteristics. 10 10s RDS(ON) LIMIT 1 100s 1ms 10ms 100ms 0.1 1s VGS = 10V SINGLE PULSE RJA = 180oC/W DC TA = 25oC 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RJA = 180C/W TA = 25C 8 6 4 2 0 0.001 0.01 0.01 0.1 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 RJA(t) = r(t) * RJA RJA = 180 C/W D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. NDC7001C Rev B (W) http://store.iiic.cc/ NDC7001C Typical Characteristics: N-Channel (continued) NDC7001C Typical Characteristics: P-Channel 2.2 VGS = -10V -4.5V -ID, DRAIN CURRENT (A) -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 -4.0V -3.5V 0.8 0.6 0.4 -3.0V 0.2 2 VGS= -3.0V 1.8 -3.5V 1.6 1.4 -4.0V -4.5V 1.2 -6.0V -10V 1 0 0.8 0 1 2 3 4 5 0 0.2 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. 0.8 1 5 ID = -0.34A VGS = -10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.6 ID = -0.17A 4 3 TA = 125oC 2 TA = 25oC 1 0 0.4 -50 -25 0 25 50 75 100 125 150 2 4 o Figure 13. On-Resistance Variation withTemperature. 25oC 0.8 125oC 0.6 0.4 0.2 0 1 2 3 10 10 TA = -55oC VDS = -5V 8 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. -IS, REVERSE DRAIN CURRENT (A) 1 6 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) -ID, DRAIN CURRENT (A) 0.4 -ID, DRAIN CURRENT (A) 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. NDC7001C Rev B (W) http://store.iiic.cc/ NDC7001C Typical Characteristics: P-Channel (continued) 10 100 VDS = -25V -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.34A f = 1 MHz VGS = 0 V -30V 8 80 CAPACITANCE (pF) -48V 6 4 CISS 60 40 COSS 2 20 0 0 CRSS 0 0.4 0.8 1.2 1.6 0 2 10 Figure 17. Gate Charge Characteristics. 40 50 60 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 30 Figure 18. Capacitance Characteristics. 10 10s 1 1ms 10ms 100ms 0.1 VGS = -10V SINGLE PULSE RJA = 180oC/W 1s DC TA = 25oC 1 10 100 SINGLE PULSE RJA = 180C/W TA = 25C 8 6 4 2 0 0.001 0.01 0.01 0.1 1 10 100 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 20. Single Pulse Maximum Power Dissipation. 1 RJA(t) = r(t) * RJA RJA = 180 C/W D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. NDC7001C Rev B (W) http://store.iiic.cc/ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5 http://store.iiic.cc/