Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Max
15 18
45 55
RθJC 1 1.5
Maximum Junction-to-Case BSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s °C/W
Maximum Junction-to-Ambient A
W
TA=70°C 1.5
Junction and Storage Temperature Range -55 to 175 °C
Power Dissipation A
TA=25°C PDSM
2.3
Avalanche Current C20 A
Repetitive avalanche energy L=0.1mH C200 mJ
A
TC=100°C 28
Pulsed Drain Current C80
Continuous Drain
Current
TC=25°C
ID
40
Drain-Source Voltage 105 V
Gate-Source Voltage ±25 V
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Maximum Units
Steady-State RθJA °C/W
Power Dissipation B
TC=25°C PD
100 W
TC=100°C 50
AOD464
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 105V
ID = 40 A (VGS =10V)
RDS(ON) < 28 mΩ (VGS =10V) @ 20A
RDS(ON) < 31 mΩ (VGS = 6V)
General Description
The AOD464 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOD464 is Pb-
free (meets ROHS & Sony 259 specifications).
A
OD464L is a Green Product ordering option. AOD464
and AOD464L are electrically identical.
G
D
S
G D S
T
O-252
D-PAK
T
op View
Drain Connected to
T
ab
Alpha & Omega Semiconductor, Ltd.
AOD464
Symbol Min Typ Max Units
BVDSS 105 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 2.5 3.2 4 V
ID(ON) 80 A
21.5 28
TJ=125°C 32 40
24 31 m
Ω
gFS 50 S
VSD 0.73 1 V
IS55 A
Ciss 2038 2445 pF
Coss 204 pF
Crss 85 pF
Rg1.3 1.56 Ω
Qg(10V) 38.5 46 nC
Qgs 8nC
Qgd 10 nC
tD(on) 12.7 ns
tr8.2 ns
tD(off) 31.5 ns
tf11.2 ns
trr 59.6 74 ns
Qrr 161 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July2005
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID=10mA, VGS=0V
IDSS Zero Gate Voltage Drain Current VDS=84V, VGS=0V µA
Gate-Body leakage current VDS=0V, VGS=±25V
Gate Threshold Voltage VDS=VGS, ID=250µA
On state drain current VGS=10V, VDS=5V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A mΩ
VGS=6V, ID=20A
Forward Transconductance VDS=5V, ID=20A
Diode Forward Voltage IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance VGS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge VGS=10V, VDS=50V, ID=20A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime VGS=10V, VDS=50V, RL=2.7Ω,
RGEN=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AOD464
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
2 2.5 3 3.5 4 4.5 5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
10
20
30
40
0 10203040
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
RDS(ON) (mΩ)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=6V,20A
VGS=10V, 20A
20
30
40
50
60
4 8 12 16 20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=6V
VGS=10V
ID=20A
25°C
125°C
0
20
40
60
80
100
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=4.5V
6V
10V
5V
Alpha & Omega Semiconductor, Ltd.
AOD464
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10203040
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
1
2
3
0 20406080100
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (nF)
Ciss
0
100
200
300
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJC Normalized Transient
Thermal Resistance
Coss Crss
VDS=50V
ID=20A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TA=25°C
0.1
1
10
100
1000
0.1 1 10 100 1000
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10µs
100µs
1ms, DC
DC
RDS(ON)
limited
TJ(Max)=175°C, TA=25°C
Alpha & Omega Semiconductor, Ltd.
AOD464
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
50
100
150
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W )
0
10
20
30
40
50
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Current rating ID(A)
0
20
40
60
0.000001 0.00001 0.0001 0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
ID(A), Peak Avalanche Current
DD
D
A
VBV
IL
t−
⋅
=
TA=25°C
TA=150°C
0
20
40
60
80
100
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
ZθJA Normalized Transient
Thermal Resistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Alpha & Omega Semiconductor, Ltd.
