DATA SH EET
Product specification
Supersedes data of October 1993 1996 Mar 19
DISCRETE SEMICONDUCTORS
BAT54W series
Schottky barrier (double) diodes
o
ok, halfpage
M3D088
1996 Mar 19 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54W series
FEATURES
•Low forward voltage
•Guard ring protected
•Very small SMD package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
PINNING
PIN BAT54
WAWCWSW
1ak
1a
1a
1
2 n.c. k2a2k2
3ka
1
,a
2k
1
,k
2k
1
,a
2
Fig.1 Simplified outline
(SOT323) and pin
configuration.
h
andbook, 2 columns
3
12
MBC870
Top view
Fig.2 BAT54W single diode
configuration (symbol).
3
12
n.c.
MLC357
Fig.3 BAT54AW diode
configuration (symbol).
3
12
MLC360
Fig.4 BAT54CW diode
configuration (symbol).
3
12
MLC359
Fig.5 BAT54SW diode
configuration (symbol).
3
12
MLC358
MARKING
TYPE NUMBER MARKING
CODE
BAT54W L4
BAT54AW 42
BAT54CW 43
BAT54SW 44
1996 Mar 19 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulsed test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage −30 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp≤1s;δ≤0.5 −300 mA
IFSM non-repetitive peak forward current tp<10 ms −600 mA
Ptot total power dissipation (per package) Tamb ≤25 °C−200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
Tamb operating ambient temperature −65 +125 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.6
IF= 0.1 mA 240 mV
IF= 1mA 320 mV
IF=10mA 400 mV
IF=30mA 500 mV
IF= 100 mA 800 mV
IRreverse current VR= 25 V; note 1; see Fig.7 2µA
trr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA: see Fig.9
5ns
C
ddiode capacitance f = 1 MHz; VR= 1 V; see Fig.8 10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
1996 Mar 19 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54W series
GRAPHICAL DATA
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.6 Forward current as a function of forward
voltage; typical values.
0102030
V (V)
R
10
3
IR
(µA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
0102030
0
5
10
15
V (V)
R
Cd
(pF)
MSA891
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
Fig.9 Reverse recovery definitions.
h
andbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IR
MRC129 - 1
F
r
1996 Mar 19 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54W series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
handbook, full pagewidth
0.25
0.10
B
0.2
0.2 A
A
M
M
12
3
0.65
1.3
2.2
1.8
0.40
0.30
B
1.35
1.15
2.2
2.0
detail X
X
1.1
max
0.1
0.0
1.0
0.8
0.3
0.1
0.2
MBC871
Dimensions in mm.
Fig.10 SOT323.
