JULY 2005 – REVISED NOVEMBER 2017
TISP1120F3D Overvoltage Protector
TISP1120F3D
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTOR
8-SOIC Package (Top View)
*RoHS COMPLIANT
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Planar Passivated Junctions
- Low Off-State Current <10 μA
Low Voltage Overshoot Under Surge
1
2
3
45
6
7
8
MDXX AE B
G
G
G
G
NC
T
R
NC
NC - No internal connection
Device Symbol
G
TR
SD1XAAa
Description
This dual forward-conducting unidirectional overvoltage protector is designed for the overvoltage protection of ICs used for the SLIC
(Subscriber Line Interface Circuit) function. The IC line driver section is typically powered with 0 V and a negative supply. The TISP1120F3D
limits voltages that exceed these supply rails.
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current helps
prevent d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are designed to
suppress and withstand the listed international lightning surges on any terminal pair.
This monolithic protection device is fabricated in an ion-implanted planar structure to ensure precise and matched breakover control, and is
virtually transparent to the system in normal operation.
How to Order
Rated for International Surge Wave Shapes
Device Package Carrier Order As Marking Code Standard Quantity
TISP1120F3D 8-SOIC Embossed Tape Reeled TISP1120F3DR-S 1120F3 2500
Device Name VDRM
V
V(BO)
V
TISP1120F3D -97 -120
Wave Shape Standard IPPSM
A
2/10 GR-1089-CORE 120
8/20 IEC 61000-4-5 70
10/160 TIA-968-A 60
10/700 ITU-T K.20/21/45 50
10/560 TIA-968-A 45
10/1000 GR-1089-CORE 35
The Model TISP1120F3D is
currently available, but not
recommended for new designs.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including Annex.
Specifications are subject to change without notice. Users should verify actual device performance in their specific
applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the
last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
JULY 2005 – REVISED NOVEMBER 2017
TISP1120F3D Overvoltage Protector
Absolute Maximum Ratings, TA= 25 °C (Unless Otherwise Noted)
Electrical Characteristics for Terminals T and R, TA= 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage VDRM -97 V
Non-repetitive peak impulse current (see Note 1)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 μs voltage waveshape)
10/160 μs (TIA-968-A, 10/160 μs voltage wave shape)
5/310 μs (ITU-T K.44, 10/700 μs voltage wave shape used in K.20/21/45)
5/320 μs (TIA-968-A, 9/720 μs voltage waveshape)
10/560 μs (TIA-968-A, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
IPPSM
2 x ±120
2 x ±70
2 x ±60
2 x ±50
2 x ±50
2 x ±45
2 x ±35
A
Non-repetitive peak on-state current, 0 °C < TA < 70 °C
1 s, 50 Hz ITSM 2 x 4.3 A
Initial rate of ri idA 83 < eulav pmar mumixam ,pmar tnerruc raenil ,tnerruc etats-no fo es T/dt 250 A/μs
Junction temperature TJ-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTE: 1. Initially the device must be in thermal equilibrium with 0 °C < TJ < 70 °C. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics for Terminals T and G or R and G, TA= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
IDRM Repetitive peak off-state current VD = ±VDRM
TA = 25 °C±5μA
TA = 70 °C±10
V(BO) Breakover voltage dv/dt = -250 V/ms, RSOURCE =300Ω±123 V
IHHolding current IT=±5 A, di/dt = ±30 mA/ms ±150 mA
Parameter Test Conditions Min Typ Max Unit
IDRM Repetitive peak off-state current VD = VDRM
TA = 25 °C-5
μA
TA = 70 °C-10
V(BO) Breakover voltage dv/dt = -250 V/ms, RSOURCE =300Ω-120 V
V(BO) Impulse breakover voltage
dv/dt ≤ -1000 V/μs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt ≤ -20 A/μs, Linear current ramp,
Maximum ramp value = -10 A
-130 V
I(BO) Breakover current dv/dt = -250 V/ms, RSOURCE =300Ω-100 -600 mA
IHHolding current IT= -5 A, di/dt = +30 mA/ms -150 mA
VTOn-state voltage IT= -5 A, tw= 100 μV3-s
VFForward voltage IF= +5 A, tw= 100 μV3+s
VFRM Peak forward recovery voltage
dv/dt ≤ +1000 V/μs, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt ≤ +20 A/μs, Linear current ramp,
Maximum ramp value = +10 A
+3.3 V
dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85VDRM -5 kV/μs
COOff-state capacitance f = 1 MHz, Vd = 1 V rms VD = -2 V 60 65 pF
VD = -50 V 20 25
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP1120F3D Overvoltage Protector
Thermal Characteristics, TA= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to ambient thermal resistance Ptot = 0.8 W
5 cm2 FR4 PCB 160 °C/W
Parameter Measurement Information
-v
I(BR)
V(BR)
V(BR)M
VDRM
IDRM
VD
IH
IT
VT
ITRM
IPPSM
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
I(BR)
V(BR)
V(BR)M
VDRM
IDRM
VD
ID
IH
IT
VT
ITRM
IPPSM
-i
Quadrant III
Switching
Characteristic
ITSM
ITSM
Figure 1. Voltage-Current Characteristic for the Terminals T and R
All Measurements are Referenced to Terminal R
PM-TISP4xxx-001-a
JULY 2005 – REVISED NOVEMBER 2017
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP1120F3D Overvoltage Protector
Parameter Measurement Information (Continued)
Figure 2. Voltage-Current Characteristic for Terminals T and G or R and G
All Measurements are Referenced to Terminal G
-v
I(BR)
V(BR)
V(BR)M
VDRM
IDRM
VD
IH
IT
VT
ITRM
IPPSM
V(BO)
I(BO)
ID
Quadrant I
Forward
Conduction
Characteristic
+v
+i
IF
VF
IFRM
IPPSM
-i
Quadrant III
Switching
Characteristic
PM-TISP5xxx-001-a
IFSM
ITSM
JULY 2005 – REVISED NOVEMBER 2017
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
COPYRIGHT© 2005, BOURNS, INC. LITHO IN U.S.A. e 11/05 TSP0508
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JULY 2005 – REVISED NOVEMBER 2017
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
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