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BAT54XV2 Schottky Barrier Diode Features * * * * * * * Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1 Pb-free Version and RoHS Compliant Matte Tin (Sn) Lead Finish Green Mold Compound Anode Cathode ELECTRICAL SYMBOL SOD-523F Band Indicates Cathode BAT54XV2 Marking: 5B Ordering Information Part Number Top Mark Package Packing Method BAT54XV2 5B SOD-523F 2L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value Unit 30 V Maximum DC Blocking Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Peak Forward Surge Current (Square Wave at pw = 300 sec) 4 A +125 C -65 to +125 C VR TJ TSTG Operating Junction Temperature Storage Temperature Range (c) 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. 1.2 www.fairchildsemi.com BAT54XV2 -- Schottky Barrier Diode June 2015 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Value Unit Power Dissipation 200 mW Thermal Resistance, Junction-to-Ambient(1) 500 C/W Note: 1. Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol BVR IR VF TRR C Parameter Conditions Breakdown Voltage IR = 10 A Reverse Leakage Current VR = 25 V Forward Voltage Min. Max. 30 Unit V 2 IF = 0.1 mA 0.24 IF = 1 mA 0.32 IF = 10 mA 0.40 IF = 30 mA 0.50 IF = 100 mA 0.80 A V Reverse Recovery Time IF = IR = 10 mA, RL = 100 , IRR = 1 mA 5 nS Capacitance VR = 1 V, f = 1 MHz 10 pF (c) 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. 1.2 www.fairchildsemi.com 2 BAT54XV2 -- Schottky Barrier Diode Thermal Characteristics 6 1000 10 o 125 C 5 Forward Current, IF [mA] Reverse Current, IR [nA] 10 o 4 75 C 10 3 10 o 25 C 2 10 1 10 o 100 o 125 C 10 o 75 C o 25 C 1 o -25 C -25 C 0 10 -1 0.1 10 0 5 10 15 20 25 30 35 40 0 100 200 300 400 500 600 700 800 Forward Voltage, VF [mV] Reverse Voltage, VR [V] Figure 1. Reverse Current vs. Reverse Voltage Figure 2. Forward Voltage vs. Forward Current 250 20 o f=1MHz 15 Capacitance, CT [pF] Power Dissipation, PD [mW] TA=25 C 10 5 200 150 100 50 0 0 0 5 10 15 20 25 30 35 0 40 50 75 100 125 150 o Reverse Voltage, VR [V] Temperature, TA[ C] Figure 3. Total Capacitance (c) 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. 1.2 25 Figure 4. Power Derating www.fairchildsemi.com 3 BAT54XV2 -- Schottky Barrier Diode Typical Performance Characteristics 0.90 0.70 A 0.8 B 1.30 1.10 2.0 0.50 0.25 TOP VIEW 0.35 0.25 0.10 M B A LAND PATTERN RECOMMENDATION 0.20 MAX 0.70 MAX 0.20 FRONT VIEW SEATING PLANE 1.70 1.50 SIDE VIEW NOTES: A. CONFORMS TO JEITA SC-79 B. ALL DIMENSIONS ARE IN MILLIMETERS C. DRAWING CONFORMS TO ASME Y14.5M-2009 D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. E. LAND PATTERN RECOMMENDATION IS BASED ON IPC7351A STANDARD SOD1609X65M F. DRAWING FILENAME: MKT-SOD523F1rev2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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