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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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LINEAR & POWER AMPLIFIERS - SMT
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
General Description
Features
Functional Diagram
The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Ampli er MMICs which offer
+30 dBm P1dB. The ampli er provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum of
external components. Vpd can be used for full power
down or RF output power/current control. The ampli er
is packaged in a low cost, 3x3 mm leadless surface
mount package with an exposed base for improved
RF and thermal performance.
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5V
Power Down Capability
3x3 mm Leadless SMT Package
Electrical Speci cations, TA = +25° C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC408LP3 / HMC408LP3E is ideal for:
• 802.11a & HiperLAN WLAN
• UNII & Point-to-Point / Multi-Point Radios
• Access Point Radios
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5.7 - 5.9 5.1 - 5.9 GHz
Gain 17 20 17 20 dB
Gain Variation Over Temperature 0.045 0.055 0.045 0.055 dB/°C
Input Return Loss 8 8 dB
Output Return Loss* 14 6 dB
Output Power for 1 dB Compression
(P1dB)
Icq= 750 mA
Icq= 500 mA
27 30
27
24 27
23 dBm
Saturated Output Power (Psat) 32.5 31 dBm
Output Third Order Intercept (IP3) 40 43 36 39 dBm
Harmonics, Pout= 30 dBm, F= 5.8 GHz 2 fo
3 fo
-50
-90
-50
-90
dBc
dBc
Noise Figure 6 6 dB
Supply Current (Icq) Vpd= 0V/5V 0.002 / 750 0.002 / 750 mA
Control Current (Ipd) Vpd= 5V 14 14 mA
Switching Speed tOn, tOff 50 50 ns
* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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Input Return Loss vs. Temperature Output Return Loss vs. Temperature*
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
* Output match optimized for 5.7 - 5.9 GHz.
-25
-15
-5
5
15
25
345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
12
15
18
21
24
27
30
33
36
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
12
16
20
24
28
32
36
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 36
LINEAR & POWER AMPLIFIERS - SMT
Power Compression @ 5.8 GHz Output IP3 vs. Temperature
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
Gain & Power vs.
Supply Voltage @ 5.8 GHz
18
20
22
24
26
28
30
32
34
4.75 5 5.25
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat (dBm)
Vcc Supply Voltage (Vdc)
0
2
4
6
8
10
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
4.8 5 5.2 5.4 5.6 5.8 6 6.2
Reverse Isolation
Power Down Isolation
ISOLATION (dB)
FREQUENCY (GHz)
30
33
36
39
42
45
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
12
15
18
21
24
27
30
33
36
0
100
200
300
400
500
600
700
800
3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5
Gain
P1dB
Psat
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq
(mA)
Vpd (Vdc)
0
6
12
18
24
30
36
-10 -5 0 5 10 15 20
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Outline Drawing
Absolute Maximum Ratings
Typical Supply Current
vs. Vs= Vcc1 + Vcc2
Note: Ampli er will operate over full voltage range shown above
Vs (V) Icq (mA)
4.75 725
5.0 750
5.25 780
Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc
Control Voltage (Vpd) +5.5 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +20 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 72.5 mW/°C above 85 °C) 4.71 W
Thermal Resistance
(junction to ground paddle) 13.8 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC408LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 408
XXXX
HMC408LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 408
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 38
LINEAR & POWER AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1Vpd
Power control pin. For maximum power, this pin should be
connected to 5V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
2, 4, 5 - 8,
12, 13, 15 N/C No Connection
3RFIN This pin AC coupled
and matched to 50 Ohms.
9, 10, 11 RFOUT RF output and DC bias for the output stage.
14 Vcc2
Power supply voltage for the second ampli er stage. Exter-
nal bypass capacitors and pull up choke are required as
shown in the application schematic.
16 Vcc1
Power supply voltage for the rst ampli er stage. External
bypass capacitors are required as shown in the application
schematic.
GND
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path.
Vias under the device are required.
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 39
Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 105180 [1]
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2 mm DC Header
C1 - C4 1,000 pF Capacitor, 0603 Pkg.
C5 - C7 100 pF Capacitor, 0402 Pkg.
C8 2.2 μF Tantalum Capacitor
C9 - C10 0.5 pF Capacitor, 0603 Pkg.
C11 10 pF Capacitor, 0402 Pkg.
L1 - L2 1.6 nH Inductor, 0603 Pkg.
U1 HMC408LP3 / HMC408LP3E
Ampli er
PCB [2] 104629 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 40
LINEAR & POWER AMPLIFIERS - SMT
Application Circuit
Note 1: C9, C10 should be located < 0.020” from pins 9, 10, & 11.
Note 2: Application circuit values shown are optimized for 5.7 - 5.9 GHz operation.
Contact our Applications Engineers for optimization of output match for other frequencies.
Recommended Component Values
L1, L2 1.6 nH
C1 - C4 1,000 pF
C5 - C7 100 pF
C8 2.2 μF
C9 - C10 0.5 pF
TL1 TL2
Impedance 50 Ohm 50 Ohm
Length 0.200” 0.100”
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 41
Notes:
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
