SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM OPTIONS SRAM MEMORY ARRAY Operating Temp. Ranges Full Military (-55oC to +125oC) Military (-55oC to +125oC) Industrial (-40oC to +85oC) Markings Q & 883 XT IT Timing 12ns 15ns 17ns 20ns Timing 25ns 35ns 45ns 55ns AVAILABLE AS MILITARY SPECIFICATIONS * * SMD 5962-94611 & 5962-95624 (Military Pinout) MIL-STD-883 FEATURES * Operation with single 5V * Built in decoupling caps for supply low noise * Vastly improved Icc Specs * Organized as 512Kx32 , byte * High speed: 12, 15, 17, 20, 25, selectable 35, 45 & 55ns * TTL Compatible Inputs and * Low power CMOS Outputs GENERAL DESCRIPTION The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as 512Kx32 bits. These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. This military temperature grade product is ideally suited for military applications. Markings -12 -15 -17 -20 Markings -25 -35 -45 -55 Package Ceramic Quad Flatpack Pin Grid Array Markings Q, Q1, Q2, BQFP P Low Power Data Retention Mode L Pinout Military Commercial Markings (no indicator) A* *(available with Q package only) 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31 I/O17 I/O18 I/O19 Vss I/O20 I/O21 I/O22 I/O23 Vcc I/O24 I/O25 I/O26 I/O27 Vss I/O28 I/O29 I/O30 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O 14 I/O 13 I/O 12 Vss I/O 11 I/O 10 I/O 9 I/O 8 Vcc I/O 7 I/O 6 I/O 5 I/O 4 Vss I/O 3 I/O 2 I/O 1 68 Lead CQFP Commercial Pinout Option (Q with Pinout A) 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31 66 Lead PGA (P) Military SMD Pinout Vcc A11 A12 A13 A14 A15 A16 CS2\ OE\ CS4\ A17 A18 NC NC NC NC NC 68 Lead CQFP (BQFP) Military SMD Pinout Option 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 NC A0 A1 A2 A3 A4 A5 CS1\ GND CS3\ WE\ A6 A7 A8 A9 A10 Vcc I/O 31 A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A9 A8 A7 I/O 0 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 Vcc A11 A12 A13 A14 A15 A16 CS1\ OE\ CS2\ A17 WE2\ WE3\ WE4\ A18 NC NC 68 Lead CQFP (Q, Q1, Q2) Military SMD Pinout Option 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc I/O 16 A18 A17 CS4\ CS3\ CS2\ CS1\ NC Vcc NC NC OE\ WE\ A16 A15 A14 I/O 15 PIN ASSIGNMENT (Top View) AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. 1 SRAM SRAM Austin Semiconductor, Inc. AS8S512K32 AS8S512K32 &&AS8S512K32A AS8S512K32A CS\4 CS4\ CS3\ CS\3 M2 CS\2 CS2\ M1 CS\1 CS1\ WE\ OE\ A0 - A18 MILITARY PINOUT/BLOCK DIAGRAM MILITARY PINOUT/BLOCK DIAGRAM TRUTH TABLE MODE Read Write(2) Standby OE\ L CE\CS WE\ CS L H I/O DOUT POWER ACTIVE X L L DIN ACTIVE X H X High Z STANDBY AS8S512K32 & AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.0 6/05 Rev. 6.9 08/13 M0 512K x 8 CS 512K x 8 CS 512K x 8 M3 CS 512K x 8 CS I/O 24 - I/O 31 I/O 16 - I/O 23 I/O 8 - I/O 15 I/O 0 - I/O 7 COMMERCIAL PINOUT/BLOCK DIAGRAM COMMERCIAL PINOUT/BLOCK DIAGRAM 2 2 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Micross Components reserves the right to change products or specifications without notice. SRAM SRAM AS8S512K32 AS8S512K32 & AS8S512K32A AS8S512K32A & Austin Semiconductor, Inc. ABSOLUTE MAXIMUM MAXIMUM RATINGS* RATINGS* ABSOLUTE VoltageofofVcc VccSupply Supply Relative to Vss.................-.5Vtoto+7V +7V Voltage Relative to Vss......................-.5V Storage Temperature.....................................-65C to +150C Storage Temperature............................................-65C to +150C ShortCircuit CircuitOutput Output Current(per I/O)............................20mA Short Current(per I/O).................................20mA Voltage on Any Pin Relative to Vss................-.5V Vcc+1V Voltage on Any Pin Relative to Vss....................-.5V totoVcc+1V Maximum Junction Temperature**.............................+150C Maximum Junction Temperature**...................................+150C *Stressesgreater greaterthan thanthose thoselisted listedunder under"Absolute "AbsoluteMaximum Maximum *Stresses Ratings" may cause permanent damage to the device. Ratings" may cause permanent damage to the device. This isis aa stress stress rating rating only only and and functional functional operation operation on on the the This device at these or any other conditions above those indicated device at these or any other conditions above those indicated inthe theoperational operationalsections sectionsof ofthis thisspecification specificationisisnot notimplied. implied. in Exposure to absolute maximum rating conditions for extended Exposure to absolute maximum rating conditions for extended periodsmay mayaffect affectreliability. reliability. periods **Junction temperature depends upon package cycle **Junction temperature depends upon package type, type, cycle time, time, loading, ambient temperature and airflow. See the Aploading, ambient temperature and airflow. See the Application plication Information section at the end of this datasheet for Information section at the end of this datasheet for more informore information. mation. ELECTRICAL CHARACTERISTICS CHARACTERISTICS AND AND RECOMMENDED ELECTRICAL RECOMMENDED DC DC OPERATING OPERATINGCONDITIONS CONDITIONS o o o o (-55 o C < T < 125o C and -40 o C to +85 o C; Vcc = 5V +10%) (-55 C < TAA < 125 C and -40 C to +85 C; Vcc = 5V +10%) DESCRIPTION Input High (logic 1) Voltage CONDITIONS SYMBOL VIH MIN 2.2 VIL -0.5 0.8 ILI1 -10 10 V A ILI2 -10 10 A Output(s) Disabled 0V<VOUT<VCC ILO -10 10 A Output High Voltage IOH = 4.0mA VOH 2.4 Output Low Voltage IOL = 8.0mA VOL Input Low (logic 1) Voltage Input Leakage Current ADD,OE 0V<VIN<VCC Input Leakage Current WE, CE Output Leakage Current I/O VCC Supply Voltage DESCRIPTION DESCRIPTION CONDITIONS CONDITIONS Icc Icc CS\>VIH; VCC = MAX PowerSupply Supply CS\>VIH; VCC = MAX Power f==MAX MAX==1/1/tRC tRC(MIN) (MIN) f Current:Standby Standby Current: OutputsOpen Open Outputs AS8S512K32 & AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Rev. 6.0 6/05 VIN==VCC VCC- -0.2V, 0.2V,oror VIN VSS +0.2V VSS +0.2V VCC=Max;f f==0Hz 0Hz VCC=Max; 1,2 V 1 0.4 V 1 5.5 V 1 MAX MAX SYMBOL -12 -15 -17 -20 -25 -35 -35 -45 -45 -55 -55 UNITS UNITSNOTES NOTES SYMBOL -12 -15 -17 -20 -25 CS\<VIL;VCC VCC==MAX MAX CS\<VIL; PowerSupply Supply Power f = MAX = 1/ tRC (MIN) Current:Operating Operating f = MAX = 1/ tRC (MIN) Current: OutputsOpen Open Outputs CMOSStandby Standby CMOS 4.5 MAX UNITS NOTES VCC+.5 V 1 250 200 200 700 175 650 150 600 140 570 130 570 120 550 110 mA mA 250 3,13 3,13 ISBT1 ISBT1 40 80 40 240 40 240 35 190 35 190 30 150 30 150 30 mA mA 80 3, 3, 1313 ISBT2 ISBT2 20 80 20 8020 80 3 3 20 80 20 80 20 8020 80 mA 8020 mA Micross Components reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1 CADD SYMBOL PARAMETER A0 - A18 Capacitance MAX 50 SRAM UNITS AS8S512K32 pF & AS8S512K32A COE OE\ Capacitance 50 CWE, CCS WE\ and CS\ Capacitance 20 pF 20 pF CIO I/O f31 CAPACITANCE (VI/O =0-0V, = Capacitance 1MHz, TA = 25oC)1 IN version) CWE ("A" SYMBOL WE\ Capacitance PARAMETER CADD A0 - A18 Capacitance NOTE: COE OE\ Capacitance 1. This parameter is sampled. CWE, CCS WE\ and CS\ Capacitance CIO I/O 0- I/O 31 Capacitance CWE ("A" version) WE\ Capacitance pF 50 MAX 50 pF UNITS pF 50 pF 20 pF 20 pF 50 pF NOTE: 1. This parameter is sampled. AC TEST CONDITIONS Test Specifications Input pulse levels.........................................VSS to 3V Input rise and fall times.........................................5ns Input timing reference levels...............................1.5V AC TEST CONDITIONS Output reference levels........................................1.5V Output load..............................................See Figure 1 Test Specifications Input pulse levels.........................................VSS to 3V Input rise and fall times.........................................5ns Input timing reference levels...............................1.5V Output reference levels........................................1.5V Output load..............................................See Figure 1 IOL Current Source Device Under Test - + Vz = 1.5V (Bipolar Supply) + Ceff = 50pf IOH Current Source NOTES: Vz is programmable from -2V to + 7V. IOL and IOH programmable from 0 to 16 mA. Vz is typically the midpoint of VOH and VOL. IOL and IOH are adjusted to simulate a typical resistive load circuit. NOTES: Vz is programmable from -2V to + 7V. AS8S512K32 IOL and&IAS8S512K32A programmable from 0 to 16 mA. OH Rev. 6.0 6/05 Vz is typically the midpoint of VOH and VOL. 4 IOL and IOH are adjusted to simulate a typical resistive load circuit. AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Figure 1 Figure 1 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Micross Components reserves the right to change products or specifications without notice. 4 SRAM AS8S512K32 & AS8S512K32A ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip select access time Output hold from address change Chip select to output in Low-Z Chip select to output in High-Z Output enable access time Output enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip select to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width WRITE pulse width Data setup time Data hold time Write disable to output in Low-z Write enable to output in High-Z AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 SYMBOL t RC AA t ACS t OH t LZCS t HZCS t AOE t LZOE t HZOE -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 12 t t WC CW AW t AS t AH t WP1 t WP2 t DS t DH t LZWE t HZWE t t 15 12 12 2 2 2 2 7 7 0 2 2 0 25 20 20 2 2 9 9 0 9 15 12 12 2 1 12 12 10 0 2 8 20 17 17 8 8 7 12 10 10 2 1 10 10 8 0 2 7 17 15 15 2 2 10 10 0 12 17 15 15 2 1 15 15 12 0 2 2 2 0 2 2 0 15 ns ns ns ns ns ns ns ns ns ns ns 2 2 0 20 20 0 20 45 25 25 2 1 25 25 20 0 2 15 20 ns ns ns ns ns ns ns ns ns 55 55 20 20 15 35 20 20 2 1 20 20 15 0 2 13 55 45 45 15 15 12 25 17 17 2 1 17 17 12 0 2 11 45 35 35 12 12 12 20 15 15 2 1 15 15 10 0 2 9 35 25 25 55 25 25 2 1 25 25 20 0 2 15 4,6,7 4,6,7 4,6 4,6 4,6,7 4,6,7 Micross Components reserves the right to change products or specifications without notice. 5 SRAM AS8S512K32 & AS8S512K32A READ CYCLE NO. 1 tRC ADDRESS tOH DATA I/O tAA PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 tRC ADDRESS CS\ OE\ DATA I/O AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 tAA t tLZCS ACS tAOE tLZOE HIGH IMPEDANCE tHZCS tHZOE DATA VALID Micross Components reserves the right to change products or specifications without notice. 6 SRAM AS8S512K32 & AS8S512K32A WRITE CYCLE NO. 1 (Chip Select Controlled) tWC ADDRESS tAW CS\ tAS WE\ tAH tCW tWP11 tHZWE tDS DATA I/O tLZWE tDH DATA VALID WRITE CYCLE NO. 2 (Write Enable Controlled) tWC ADDRESS CS\ WE\ tAS tAW tWP21 tDS DATA I/O AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 tAH tCW tDH DATA VALID Micross Components reserves the right to change products or specifications without notice. 7 SRAM AS8S512K32 & AS8S512K32A NOTES 1. All voltages referenced to VSS (GND). 2. -2V for pulse width <20ns. 3. ICC is dependent on output loading and cycle rates. The specified value applies with the outputs 1 HZ. unloaded, and f= t RC(MIN) tHZCS, is less than tLZCS, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip selects and output enable are held in their active state. 10. Address valid prior to or coincident with latest occurring chip enable. 11. tRC= READ cycle time. 4. This parameter guaranteed but not tested. 12. Chip enable (CS\) and write enable (WE\) can initiate 5. Test conditions as specified with output loading as and terminate a WRITE cycle. shown in Fig. 1 unless otherwise noted. 6. tHZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. 13. ICC is for 32 bit mode. Transition is measured +/- 200 mV typical from steady state voltage, allowing for actual tester RC time constant. 7. At any given temperature and voltage condition, LOW POWER CHARACTERISTICS (L Version Only) DESCRIPTION VCC for Retention Data Data Retention Current Chip Deselect to Data Retention Time CONDITIONS All Inputs @ Vcc + 0.2V or Vss + 0.2V, CS\ = Vcc + 0.2V SYMBOL VDR MIN 2 MAX UNITS V VCC = 2V ICCDR 10 mA VCC = 3V ICCDR 12 mA NOTES tCDR 0 ns 4 tR tRC ns 4, 11 Operation Recovery Time LOW VCC DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V 4.5V VDR>2V CDR R t t VDR CS\ 1-4 AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. 8 SRAM AS8S512K32 SRAM & AS8S512K32 AS8S512K32A & AS8S512K32A Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* MECHANICAL DEFINITIONS* Micross Case #702 (Package Designator Q) SMD#702 5962-94611, Outline Q) M ASI Case (PackageCase Designator SMD 5962-94611, Case Outline M 4 x D2 4 x D2 4 x D1 D DETAIL A DETAIL A 4 x D1 D R 1Ro - 7o b B L1 B 1 -7 o b e o SEE DETAIL A e L1 A1 SEE DETAIL A A A1 A2 E A A2 E SYMBOL A A1 A2 B b D D1 D2 E e R L1 MIN 0.123 0.118 0.000 SMD SPECIFICATIONS 0.010 REF 0.013 0.800 BSC 0.870 0.980 0.936 0.050 BSC 0.005 0.035 MAX 0.200 0.186 0.020 0.017 0.890 1.000 0.956 --0.045 *All measurements are in inches. Micross Components reserves the right to change products or specifications without notice. AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 9 *All measurements are in inches. AS8S512K32 & AS8S512K32A Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM AS8S512K32 & AS8S512K32A MECHANICAL DEFINITIONS* Micross Package Designator Q2 D2 D1 D 1 b D3 e PACKAGE SPECIFICATION PACKAGE Symbol MinSPECIFICATION Max Symbol Max Min A .200 A .200 A1 .070 .080 A1 .070 .080 B .013 .017 .013 .017 .010 REF b b .010 REF .800 BSC D B D1 D .870 .890BSC .800 D2D1 .980 .870 1.00 .890 .050 BSC e D2 1.010 1.030 .010 TYP R D3 .975 .995 L1 e .035 .045 .050 BSC Dimensions are in inches. .010 TYP R .050 L1 .065 A R L1 B A1 Dimensions in inches *All measurements are in inches. AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. 10 SRAM SRAM AS8S512K32 AS8S512K32 & AS8S512K32A & AS8S512K32A Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* MECHANICAL DEFINITIONS* Micross Case #904 (Package Designator P ) ASI Case #904 (Package Designator SMD 5962-94611, Case Outline TP ) SMD 5962-94611, Case Outline T 4xD D1 4xD D2 D1 Pin 56 A A D2 Pin 56 A1 A1 Pin 1 b1 (identified by 0.060 square pad) Pin 1 b1 (identified by 0.060 square pad) E1 E1 e e b e Pin 66 Pin 66 e SYMBOL A A1 b b1 D D1/E1 D2 e L b Pin 11 L Pin 11 MIN 0.144 0.025 0.016 0.045 1.065 L SMD SPECIFICATIONS 1.000 TYP 0.600 TYP 0.100 TYP 0.145 MAX 0.181 0.035 0.020 0.055 1.085 0.155 *All measurements are in inches. AS8S512K32 & AS8S512K32A *All measurements are in inches. Rev. 6.9 08/13 AS8S512K32 & AS8S512K32A Rev. 6.0 6/05 Micross Components reserves the right to change products or specifications without notice. 11 11 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. SRAM AS8S512K32 & AS8S512K32A MECHANICAL DEFINITIONS* Micross Case (Package Designator Q1) SMD 5962-94611, Case Outline A SYMBOL A A1 b B c D/E D1/E1 D2/E2 e L R SMD SPECIFICATIONS MIN MAX --0.200 0.054 --0.013 0.017 0.010 TYP 0.009 0.012 0.980 1.000 0.870 0.890 0.800 BSC 0.050 BSC 0.035 0.045 0.010 TYP *All measurements are in inches. AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. 12 SRAM AS8S512K32 & AS8S512K32A MECHANICAL DEFINITIONS* Case outline N. Micross Case (Package Designator BQFP) SMD 5962-95624, Case Outline N Case outline N - Continued. Symbol Millimeters Inches Min Max Min Max A 2.92 5.10 .115 .200 A1 1.40 1.65 .055 .065 A2 1.14 1.40 .045 .055 b 0.30 0.46 .012 .018 C 0.23 0.31 .009 .012 D/E 63.63 66.42 2.505 2.615 D1/E1 39.24 40.01 1.545 1.575 D2/E2 71.25 84.20 2.805 3.315 e 1.14 1.40 .045 .055 e1 20.19 20.45 .795 j FIGURE 1. Case outline(s). 4.83 5.33 .190 k 37.72 38.48 1.485 L 12.19 13.21 .480 STANDARD MICROCIRCUIT DRAWING 9.45 9.86 S1 AS8S512K32 & AS8S512K32A DEFENSE Rev. 6.9 08/13 SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 NOTES: DSCC FORM 2234 SIZE .372 A .805 .210 1.515 .520 .388 REVISION LEVEL C 5962-95624 SHEET Micross Components reserves the right to change products or specifications without notice. 13 1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound units shall rule. 2. Pin numbers are for reference only. 11 SRAM AS8S512K32 & AS8S512K32A ORDERING INFORMATION Device Number Package Type Speed (ns) AS8S512K32 Q, Q1, Q2, P or BQFP 12, 15, 17, 20, 25, 35, 45 or 55 Examples: Power Option L (Low Power) Blank (Std power) /* *Available Processes 0 0 AS8S512K32Q15/Q IT = Industrial Temperature Range 40 C to +85 C AS8S512K32P17L/Q XT = Military Temperature Range 0 0 55 C to +125 C AS8S512K32P25/XT AS8S512K32Q155/IT AS8S512K32BQFP55/883C Q & 883C = Full Military Processing 0 0 55 C to +125 C AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Process Micross Components reserves the right to change products or specifications without notice. 14 SRAM AS8S512K32 & AS8S512K32A MICROSS TO DSCC PART NUMBER CROSS REFERENCE Package Designator Q Micross Part# AS8S512K32Q12/Q AS8S512K32Q12/Q AS8S512K32Q12L/Q AS8S512K32Q12L/Q AS8S512K32Q15/Q AS8S512K32Q15/Q AS8S512K32Q15L/Q AS8S512K32Q15L/Q AS8S512K32Q17/Q AS8S512K32Q17/Q AS8S512K32Q17L/Q AS8S512K32Q17L/Q AS8S512K32Q20/Q AS8S512K32Q20/Q AS8S512K32Q20L/Q AS8S512K32Q20L/Q AS8S512K32Q25/Q AS8S512K32Q25/Q AS8S512K32Q25L/Q AS8S512K32Q25L/Q AS8S512K32Q35/Q AS8S512K32Q35/Q AS8S512K32Q35L/Q AS8S512K32Q35L/Q AS8S512K32Q 45/Q AS8S512K32Q45/Q AS8S512K32Q45/Q AS8S512K32Q45L/Q AS8S512K32Q45L/Q AS8S512K32Q55/Q AS8S512K32Q55/Q AS8S512K32Q55L/Q AS8S512K32Q55L/Q SMD Part# 59629461118HMA 59629461118HMC 59629461120HMA 59629461120HMC 59629461117HMA 59629461117HMC 59629461119HMA 59629461119HMC 59629461116HMA 59629461116HMC 59629461110HMA 59629461110HMC 59629461115HMA 59629461115HMC 59629461109HMA 59629461109HMC 59629461114HMA 59629461114HMC 59629461108HMA 59629461108HMC 59629461113HMA 59629461113HMC 59629461107HMA 59629461107HMC 5962 9461112HMA 59629461112HMA 59629461112HMC 59629461106HMA 59629461106HMC 59629461111HMA 59629461111HMC 59629461105HMA 59629461105HMC Package Designator Q1 Micross Part# AS8S512K32Q112/883C AS8S512K32Q112/883C AS8S512K32Q112L/883 AS8S512K32Q112L/883 AS8S512K32Q115/883C AS8S512K32Q115/883C AS8S512K32Q115L/883 AS8S512K32Q115L/883 AS8S512K32Q117/883C AS8S512K32Q117/883C AS8S512K32Q117L/883 AS8S512K32Q117L/883 AS8S512K32Q120/883C AS8S512K32Q120/883C AS8S512K32Q120L/883 AS8S512K32Q120L/883 AS8S512K32Q125/883C AS8S512K32Q125/883C AS8S512K32Q125L/883 AS8S512K32Q125L/883 AS8S512K32Q135/883C AS8S512K32Q135/883C AS8S512K32Q135L/883 AS8S512K32Q135L/883 AS8S512K32Q1 45/883C AS8S512K32Q145/883C AS8S512K32Q145/883C AS8S512K32Q145L/883 AS8S512K32Q145L/883 AS8S512K32Q155/883C AS8S512K32Q155/883C AS8S512K32Q155L/883 AS8S512K32Q155L/883 SMD Part# 59629461118HAA 59629461118HAC 59629461120HAA 59629461120HAC 59629461117HAA 59629461117HAC 59629461119HAA 59629461119HAC 59629461116HAA 59629461116HAC 59629461110HAA 59629461110HAC 59629461115HAA 59629461115HAC 59629461109HAA 59629461109HAC 59629461114HAA 59629461114HAC 59629461108HAA 59629461108HAC 59629461113HAA 59629461113HAC 59629461107HAA 59629461107HAC 5962 9461112HAA 59629461112HAA 59629461112HAC 59629461106HAA 59629461106HAC 59629461111HAA 59629461111HAC 59629461105HAA 59629461105HAC Package Designator P Micross Part# AS8S512K32P12/Q AS8S512K32P12/Q AS8S512K32P12L/Q AS8S512K32P12L/Q AS8S512K32P15/Q AS8S512K32P15/Q AS8S512K32P15L/Q AS8S512K32P15L/Q AS8S512K32P17/Q AS8S512K32P17/Q AS8S512K32P17L/Q AS8S512K32P17L/Q AS8S512K32P20/Q AS8S512K32P20/Q AS8S512K32P20L/Q AS8S512K32P20L/Q AS8S512K32P25/Q AS8S512K32P25/Q AS8S512K32P25L/Q AS8S512K32P25L/Q AS8S512K32P35/Q AS8S512K32P35/Q AS8S512K32P35L/Q AS8S512K32P35L/Q AS8S512K32P 45/Q AS8S512K32P45/Q AS8S512K32P45/Q AS8S512K32P45L/Q AS8S512K32P45L/Q AS8S512K32P55/Q AS8S512K32P55/Q AS8S512K32P55L/Q AS8S512K32P55L/Q SMD Part# 59629461118HTA 59629461118HTC 59629461120HTA 59629461120HTC 59629461117HTA 59629461117HTC 59629461119HTA 59629461119HTC 59629461116HTA 59629461116HTC 59629461110HTA 59629461110HTC 59629461115HTA 59629461115HTC 59629461109HTA 59629461109HTC 59629461114HTA 59629461114HTC 59629461108HTA 59629461108HTC 59629461113HTA 59629461113HTC 59629461107HTA 59629461107HTC 5962 9461112HTA 59629461112HTA 59629461112HTC 59629461106HTA 59629461106HTC 59629461111HTA 59629461111HTC 59629461105HTA 59629461105HTC P k Package Designator D i t BQFP Micross Part# AS8S512K32BQFP20/883C AS8S512K32BQFP25/883C AS8S512K32BQFP25/883C AS8S512K32BQFP35/883C AS8S512K32BQFP35/883C AS8S512K32BQFP45/883C AS8S512K32BQFP45/883C AS8S512K32BQFP55/883C AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 SMD Part# 59629562409HNC 59629562408HNC 59629562412HNC 59629562407HNC 59629562411HNC 59629562406HNC 59629562410HNC 59629562405HNC Micross Components reserves the right to change products or specifications without notice. 15 SRAM AS8S512K32 & AS8S512K32A DOCUMENT TITLE 512K x 32 SRAM MEMORY ARRAY Rev # 6.5 HistoryRelease Date Updated Features, Temp Range & April 2010 General Description - Page 1, Updated Order Chart - Page 13, Removed Space Processing - Page 13 Status Release 6.6 Updated Ordering Table, Page 14 June 2010 Updated DSCC Cross Reference, Page 15 Added SMD 5962-95624, Page 1 Added BQFP Package, Page 1 and added BQFP drawing on page 13 (BQFP package is listed on SMD 5962-95624) Release 6.7 Updated Q2 Spec, Page 10 Release July 2010 6.8 Page 3 Changes:June 2011Release From To *ICC (mA) -17 700175 -20 650150 -25 600140 -35 570130 -45 570120 -55 550110 *ISBT1 (mA) -12 -15 -17 -20 -25 -35 -45 -55 8040 8040 24040 24035 19035 19030 15030 15030 *ISBT2(mA) 80 20 *2V ICCDR(mA) 20 10 *3V ICCDR(mA) 28 12 *Removed note from page 8 "-12 &-15 have a 32mA limit". AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. 16 SRAM AS8S512K32 & AS8S512K32A Rev # 6.9 HistoryRelease Date Added 68 Lead CQFP (BQFP) August 2013 Military SMD Pinout Option AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Status Release Micross Components reserves the right to change products or specifications without notice. 17