AS8S512K32P-55L/XT - Micross Components, Inc.

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

GENERAL DESCRIPTION

The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS

SRAM Modules organized as 512Kx32 bits. These devices achieve

high speed access, low power consumption and high reliability by

employing advanced CMOS memory technology.

This military temperature grade product is ideally suited for

military applications.

FEATURES

PIN ASSIGNMENT

(Top View)

AVAILABLE AS MILITARY SPECIFICATIONS

• SMD5962-94611&5962-95624(MilitaryPinout)

• MIL-STD-883

512K x 32 SRAM

SRAM MEMORY ARRAY

68 Lead CQFP

Commercial

Pinout Option

(Q with

Pinout A)

I/O17

I/O18

I/O19

Vss

I/O20

I/O21

I/O22

I/O23

Vcc

I/O24

I/O25

I/O26

I/O27

Vss

I/O28

I/O29

I/O30

I/O14

I/O13

I/O12

Vss

I/O11

I/O10

I/O9

I/O8

Vcc

I/O7

I/O6

I/O5

I/O4

Vss

I/O3

I/O2

I/O1

I/O31

Vcc

A13

A12

A11

A10

I/O0

I/O16

A18

A17

CS4\

CS3\

CS2\

CS1\

Vcc

OE\

WE\

A16

A15

A14

I/O15

68 Lead CQFP

(Q, Q1, Q2)

Military SMD

Pinout Option

I/O0

I/O1

I/O2

I/O3

I/O4

I/O 5

I/O 6

I/O 7

GND

I/O 8

I/O9

I/O 10

I/O 11

I/O12

I/O 13

I/O14

I/O 15

I/O16

I/O17

I/O18

I/O19

I/O20

I/O21

I/O22

I/O23

GND

I/O24

I/O25

I/O26

I/O27

I/O28

I/O29

I/O30

I/O31

Vcc

A11

A12

A13

A14

A15

A16

CS1\

OE\

CS2\

A17

WE2\

WE3\

WE4\

A18

CS3\

GND

CS4\

WE1\

A10

Vcc

68 Lead

CQFP

(BQFP)

Military SMD

Pinout Option

I/O0

I/O1

I/O2

I/O3

I/O4

I/O 5

I/O 6

I/O 7

GND

I/O 8

I/O9

I/O 10

I/O 11

I/O12

I/O 13

I/O14

I/O 15

I/O16

I/O17

I/O18

I/O19

I/O20

I/O21

I/O22

I/O23

GND

I/O24

I/O25

I/O26

I/O27

I/O28

I/O29

I/O30

I/O31

Vcc

A11

A12

A13

A14

A15

A16

CS2\

OE\

CS4\

A17

A18

CS1\

GND

CS3\

WE\

A10

Vcc

66 Lead

PGA (P)

Military SMD

Pinout

• Operation with single 5V

supply

• VastlyimprovedIccSpecs

• High speed: 12, 15, 17, 20, 25,

35,45&55ns

• LowpowerCMOS

• Built in decoupling caps for

low noise

• Organized as 512Kx32 , byte

selectable

• TTLCompatibleInputsand

Outputs

OPTIONS

Operating Temp. Ranges Markings

FullMilitary(-55oC to +125oC) Q&883

Military(-55oC to +125oC) XT

Industrial(-40oC to +85oC) IT

Timing Markings Timing Markings

12ns -12 25ns -25

15ns -15 35ns -35

17ns -17 45ns -45

20ns -20 55ns -55

Package Markings

Ceramic Quad Flatpack Q,Q1,Q2,BQFP

PinGridArray P

Low Power Data

Retention Mode

Pinout Markings

Military (noindicator)

Commercial A*

*(available with Q package only)

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

COMMERCIAL PINOUT/BLOCK DIAGRAM

MILITARY PINOUT/BLOCK DIAGRAM

SRAMSRAM

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.0 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

CS\4

CS\3

CS\2

CS\1

WE\

OE\

A0 - A18

I/O 24 - I/O 31

I/O 16 - I/O 23

I/O 8 - I/O 15

I/O 0 - I/O 7

512K x 8

COMMERCIAL PINOUT/BLOCK DIAGRAM

MILITARY PINOUT/BLOCK DIAGRAM

TRUTH TABLE

MODE OE\ CE\ WE\ I/O POWER

Read LLH

DOUT ACTIVE

Write(2) XLL DIN ACTIVE

Standby XHX

High Z STANDBY

CS4\

CS3\

CS2\

CS1\

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

ABSOLUTE MAXIMUM RATINGS*

VoltageofVccSupplyRelativetoVss.................-.5Vto+7V

StorageTemperature.....................................-65°Cto+150°C

ShortCircuitOutputCurrent(perI/O)............................20mA

VoltageonAnyPinRelativetoVss................-.5VtoVcc+1V

MaximumJunctionTemperature**.............................+150°C

*Stresses greater than those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation on the

device at these or any other conditions above those indicated

intheoperationalsectionsofthisspecicationisnotimplied.

Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

**Junction temperature depends upon package type, cycle

time,loading,ambienttemperatureandairow.SeetheAp-

plicationInformationsectionattheendofthisdatasheetfor

more information.

DESCRIPTION SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES

Power Supply

Current: Operating Icc 250 200 175 150 140 130 120 110 mA 3,13

Power Supply

Current: Standby I

SBT1

40 40 40 35 35 30 30 30 mA 3, 13

CMOS Standby I

SBT2

20 20 20 20 20 20 20 20 mA

VIN = VCC - 0.2V, or

VSS +0.2V

VCC=Max; f = 0Hz

MAX

CONDITIONS

CS\<VIL; VCC = MAX

f = MAX = 1/ tRC (MIN)

Outputs Open

CS\>VIH; VCC = MAX

f = MAX = 1/ tRC (MIN)

Outputs Open

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

(-55oC < T

A < 125oC and -40oC to +85oC; Vcc = 5V +10%)

SRAMSRAM

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.0 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS*

VoltageofVccSupplyRelativetoVss......................-.5Vto+7V

StorageTemperature............................................-65°Cto+150°C

ShortCircuitOutputCurrent(perI/O).................................20mA

VoltageonAnyPinRelativetoVss....................-.5VtoVcc+1V

MaximumJunctionTemperature**...................................+150°C

*Stresses greater than those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation on the

device at these or any other conditions above those indicated

in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

**Junction temperature depends upon package type, cycle time,

loading, ambient temperature and airflow. See the Application

Informationsectionattheendofthisdatasheetformoreinfor-

mation.

DESCRIPTION SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES

Power Supply

Current: Operating Icc 250 200 700 650 600 570 570 550 mA 3,13

Power Supply

Current: Standby I

SBT1

80 80 240 240 190 190 150 150 mA 3, 13

CMOS Standby I

SBT2

80 80 80 80 80 80 80 80 mA

VIN = VCC - 0.2V, or

VSS +0.2V

VCC=Max; f = 0Hz

MAX

CONDITIONS

CS\<VIL; VCC = MAX

f = MAX = 1/ tRC (MIN)

Outputs Open

CS\>VIH; VCC = MAX

f = MAX = 1/ tRC (MIN)

Outputs Open

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

(-55oC< TA< 125oC and -40oC to +85oC; Vcc = 5V +10%)

DESCRIPTION CONDITIONS SYMBOL MIN MAX UNITS

NOTES

Input High (logic 1) Voltage V

2.2 V

+.5 V1

Input Low (logic 1) Voltage V

-0.5 0.8 V 1,2

Input Leakage Current

ADD,OE

LI1

-10 10

Input Leakage Current

WE, CE

LI2

-10 10

Output(s) Disabled

0V<V

OUT

Output High Voltage I

= 4.0mA V

2.4 V 1

Output Low Voltage I

= 8.0mA V

0.4 V 1

Supply Voltage V

4.5 5.5 V 1

0V<V

Output Leakage Current

I/O

ILO µA

10-10

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

AC TEST CONDITIONS

NOTE:

1. This parameter is sampled.

NOTES:

Vzisprogrammablefrom-2Vto+7V.

IOLandIOH programmable from 0 to 16 mA.

Vz is typically the midpoint of VOH and VOL.

IOLandIOH are adjusted to simulate a typical resistive load

circuit.

Inputpulselevels.........................................VSS to 3V

Inputriseandfalltimes.........................................5ns

Inputtimingreferencelevels...............................1.5V

Output reference levels........................................1.5V

Output load..............................................See Figure 1

Test Speciﬁcations

SYMBOL

PARAMETER

MAX

UNITS

ADD

A0 - A18 Capacitance 50 pF

OE\ Capacitance 50 pF

WE,

WE\ and CS\ Capacitance 20 pF

I/O 0- I/O 31 Capacitance 20 pF

("A" version) WE\ Capacitance 50 pF

CAPACITANCE (VIN = 0V, f = 1MHz, T

A = 25oC)1

Figure 1

SRAMSRAM

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.0 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

AC TEST CONDITIONS

NOTE:

1. This parameter is sampled.

Current Source

Vz = 1.5V

(Bipolar

Supply)

Device

Under

Test

Ceff = 50pf

NOTES:

Vzisprogrammablefrom-2Vto+7V.

IOLandIOH programmable from 0 to 16 mA.

Vz is typically the midpoint of VOH and VOL.

IOLandIOH are adjusted to simulate a typical resistive load

circuit.

Inputpulselevels.........................................VSS to 3V

Inputriseandfalltimes.........................................5ns

Inputtimingreferencelevels...............................1.5V

Output reference levels........................................1.5V

Output load..............................................See Figure 1

Test Specifications

SYMBOL PARAMETER MAX UNITS

CADD A0 - A18 Capacitance 50 pF

COE OE\ Capacitance 50 pF

CWE, CCS WE\ and CS\ Capacitance 20 pF

CIO I/O 0- I/O 31 Capacitance 20 pF

CWE ("A" version) WE\ Capacitance 50 pF

CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1

Figure 1

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS

(NOTE 5) (-55oC<T

A < 125oC and -40oC to +85oC; VCC = 5V +10%)

MIN MA

READ cycle time tRC 12 15 17 20 25 35 45 55 ns

Address access time tAA 12 15 17 20 25 35 45 55 ns

Chip select access time tACS 12 15 17 20 25 35 45 55 ns

Output hold from address change tOH 22

222222 ns

Chip select to output in Low-Z tLZCS 22

222222 ns

4,6,7

Chip select to output in High-Z tHZCS 789 10 12 15 20 20 ns 4,6,7

Output enable access time tAOE 789 10 12 15 20 20 ns

Output enable to output in Low-Z tLZOE 00

000000 ns4,6

Output disable to output in High-Z tHZOE 79

12 12 12 15 20 20 ns 4,6

WRITE cycle time tWC 12 15 17 20 25 35 45 55 ns

Chip select to end of write tCW 10 12 15 15 17 20 25 25 ns

Address valid to end of write tAW 10 12 15 15 17 20 25 25 ns

Address setup time tAS

22222222 ns

Address hold from end of write tAH

11111111 ns

WRITE pulse width tWP1 10 12 15 15 17 20 25 25 ns

WRITE pulse width tWP2 10 12 15 15 17 20 25 25 ns

Data setup time tDS 8 10 12 10 12 15 20 20 ns

Data hold time tDH

00000000 ns

Write disable to output in Low-z tLZWE

22222222 ns

4,6,7

Write enable to output in High-Z tHZWE 7 8 9 11 13 15 15 15 ns 4,6,7

WRITE CYCLE

READ CYCLE

DESCRIPTION -20-17 -25

SYMBOL NOTESUNITS

-35-12 -15 -45 -55

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

READ CYCLE NO. 1

READ CYCLE NO. 2

ADDRESS

DATAI/O PREVIOUSDATAVALID DATAVALID

tOH

tAA

tRC

ADDRESS

tRC

HIGHIMPEDANCE DATAVALID

tAA

tACS

tLZCS tHZCS

tHZOE

tAOE

tLZOE

CS\

OE\

DATAI/O

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

WRITE CYCLE NO. 2

(Write Enable Controlled)

WRITE CYCLE NO. 1

(Chip Select Controlled)

ADDRESS

tWC

DATAVALID

tAW

tAS

tWP21

tCW

CS\

WE\

DATAI/O tDH

tDS

tAH

ADDRESS

tWC

DATAVALID

tAW tCW

tAS

tAH

tLZWE

tWP11

tHZWE

CS\

WE\

DATAI/O

tDH

tDS

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

tHZCS, is less than tLZCS, and tHZWE is less than tLZWE.

8.WE\isHIGHforREADcycle.

9.Deviceiscontinuouslyselected.Chipselectsandoutput

enable are held in their active state.

10. Address valid prior to or coincident with latest occurring

chip enable.

11. tRC=READcycletime.

12.Chipenable(CS\)andwriteenable(WE\)caninitiate

andterminateaWRITEcycle.

13.ICC is for 32 bit mode.

NOTES

1. All voltages referenced to VSS(GND).

2.-2Vforpulsewidth<20ns.

3.ICC is dependent on output loading and cycle rates.

Thespeciedvalueapplieswiththeoutputs

4.Thisparameterguaranteedbutnottested.

5.Testconditionsasspeciedwithoutputloadingas

shown in Fig. 1 unless otherwise noted.

6. tHZCS, tHZOE and tHZWEarespeciedwithCL= 5pF as in Fig. 2.

Transitionismeasured+/-200mVtypicalfromsteadystate

voltage, allowing for actual tester RC time constant.

7. At any given temperature and voltage condition,

RC(MIN)

unloaded, and f= HZ.

LOW VCC DATA RETENTION WAVEFORM

LOW POWER CHARACTERISTICS (L Version Only)

DESCRIPTION SYMBOL MIN MA

UNITS NOTES

VCC for Retention Data VDR

VCC = 2V ICCDR 10 mA

VCC = 3V ICCDR 12 mA

Chip Deselect to Data

Retention Time tCDR 0 ns 4

Operation Recovery Time tRtRC ns 4, 11

Data Retention Current

All Inputs @ Vcc + 0.2V

or Vss + 0.2V,

CS\ = Vcc + 0.2V

CONDITIONS

DATARETENTIONMODE

4.5V 4.5V

VDR>2V

VDR

tCDR tR

VCC

CS\1-4

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

MECHANICAL DEFINITIONS*

Micross Case #702 (Package Designator Q)

SMD 5962-94611, Case Outline M

*All measurements are in inches.

4xD2

4xD1

SEEDETAILA

DETAILA

1o-7o

SRAMSRAM

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.0 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

MECHANICAL DEFINITIONS*

ASI Case #702 (Package Designator Q)

SMD 5962-94611, Case Outline M

*All measurements are in inches.

4xD2

4xD1

MIN MAX

A 0.123 0.200

A1 0.118 0.186

A2 0.000 0.020

b 0.013 0.017

D1 0.870 0.890

D2 0.980 1.000

E 0.936 0.956

R 0.005 ---

L1 0.035 0.045

SYMBOL

0.800 BSC

0.050 BSC

SMD SPECIFICATIONS

0.010 REF

SEEDETAILA

DETAILA

1o-7

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

Dimensions in inches

.050 BSC

.010 TYP

PACKAGE SPECIFICATION

Symbol

.890

.200

Max

.080

.017

.070

.010 REF

.870

.013

Min

.800 BSC

1.010 1.030

.050 .065

eD3

.975 .995

MECHANICAL DEFINITIONS*

Micross Package Designator Q2

*All measurements are in inches.

Symbol Min Max

A .200

A1 .070 .080

B .013 .017

D1 .870 .890

D2 .980 1.00

L1 .035 .045

Dimensionsareininches.

PACKAGESPECIFICATION

.010REF

.800BSC

.050BSC

.010TYP

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

MECHANICAL DEFINITIONS*

Micross Case #904 (Package Designator P )

SMD 5962-94611, Case Outline T

*All measurements are in inches.

4xD

Pin66 ePin11

Pin1

(identied by

0.060 square pad)

Pin56

φb

φb1

SRAMSRAM

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.0 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

MECHANICAL DEFINITIONS*

ASI Case #904 (Package Designator P )

SMD 5962-94611, Case Outline T

*All measurements are in inches.

4xD

Pin66 ePin11

Pin1

(identified by

0.060 square pad)

Pin56

φb

φb1

MIN

MAX

A 0.144 0.181

A1 0.025 0.035

b0.016 0.020

b1 0.045 0.055

D 1.065 1.085

D1/E1

L 0.145 0.155

0.600 TYP

0.100 TYP

SYMBOL

1.000 TYP

SMD SPECIFICATIONS

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

MECHANICAL DEFINITIONS*

Micross Case (Package Designator Q1)

SMD 5962-94611, Case Outline A

*All measurements are in inches.

MIN MAX

A--- 0.200

A1 0.054 ---

b0.013 0.017

c0.009 0.012

D/E 0.980 1.000

D1/E1 0.870 0.890

D2/E2

L0.035 0.045

SYMBOL

SMD SPECIFICATIONS

0.010 TYP

0.800 BSC

0.050 BSC

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

MECHANICAL DEFINITIONS*

Micross Case (Package Designator BQFP)

SMD 5962-95624, Case Outline N

STANDARD

MICROCIRCUIT DRAWING

SIZE

A5962-95624

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

REVISION LEVEL

SHEET

DSCC FORM 2234

APR 97

Case outline N.

FIGURE 1. Case outline(s).

STANDARD

MICROCIRCUIT DRAWING

SIZE

A5962-95624

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

REVISION LEVEL

SHEET

DSCC FORM 2234

APR 97

Case outline N - Continued.

Symbol Millimeters Inches

Min Max Min Max

A2.92 5.10 .115 .200

A1 1.40 1.65 .055 .065

A2 1.14 1.40 .045 .055

b0.30 0.46 .012 .018

C0.23 0.31 .009 .012

D/E 63.63 66.42 2.505 2.615

D1/E1 39.24 40.01 1.545 1.575

D2/E2 71.25 84.20 2.805 3.315

e1.14 1.40 .045 .055

e1 20.19 20.45 .795 .805

j4.83 5.33 .190 .210

k37.72 38.48 1.485 1.515

L12.19 13.21 .480 .520

S1 9.45 9.86 .372 .388

NOTES:

1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of

measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound

units shall rule.

2. Pin numbers are for reference only.

FIGURE 1. Case outline(s) - Continued.

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

DeviceNumber PackageType Speed(ns) PowerOption Process

L(LowPower)

Blank(Stdpower)

*AvailableProcesses

IT=IndustrialTemperatureRange ‐400Cto+850C

XT=MilitaryTemperatureRange ‐550Cto+1250C

Q&883C=FullMilitaryProcessing ‐550Cto+1250C

AS8S512K32BQFP‐55/883C

AS8S512K32P‐25/XT

AS8S512K32Q1‐55/IT

AS8S512K32 Q,Q1,Q2,PorBQFP ‐12,‐15,‐17,‐20,‐25,‐35,‐45or‐55 /*

Examples:

AS8S512K32Q‐15/Q

AS8S512K32P‐17L/Q

ORDERING INFORMATION

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

MICROSS TO DSCC PART NUMBER

CROSS REFERENCE

MicrossPart# SMDPart# MicrossPart# SMDPart# MicrossPart# SMDPart#

AS8S512K32Q‐12/Q5962‐9461118HMAAS8S512K32Q1‐12/883C5962‐9461118HAAAS8S512K32P‐12/Q5962‐9461118HTA

AS8S512K32Q‐12/Q5962‐9461118HMCAS8S512K32Q1‐12/883C5962‐9461118HACAS8S512K32P‐12/Q5962‐9461118HTC

AS8S512K32Q‐12L/Q5962‐9461120HMAAS8S512K32Q1‐12L/8835962‐9461120HAAAS8S512K32P‐12L/Q5962‐9461120HTA

AS8S512K32Q‐12L/Q5962‐9461120HMCAS8S512K32Q1‐12L/8835962‐9461120HACAS8S512K32P‐12L/Q5962‐9461120HTC

AS8S512K32Q‐15/Q5962‐9461117HMAAS8S512K32Q1‐15/883C5962‐9461117HAAAS8S512K32P‐15/Q5962‐9461117HTA

AS8S512K32Q‐15/Q5962‐9461117HMCAS8S512K32Q1‐15/883C5962‐9461117HACAS8S512K32P‐15/Q5962‐9461117HTC

AS8S512K32Q

‐

15L/Q

5962

‐

9461119HMA

AS8S512K32Q1

‐

15L/883

5962

‐

9461119HAA

AS8S512K32P

‐

15L/Q

5962

‐

9461119HTA

PackageDesignatorQ PackageDesignatorQ1 PackageDesignatorP

AS8S512K32Q‐15L/Q



5962‐9461119HMA



AS8S512K32Q1‐15L/883



5962‐9461119HAA



AS8S512K32P‐15L/Q



5962‐9461119HTA



AS8S512K32Q‐15L/Q5962‐9461119HMCAS8S512K32Q1‐15L/8835962‐9461119HACAS8S512K32P‐15L/Q5962‐9461119HTC

AS8S512K32Q‐17/Q5962‐9461116HMAAS8S512K32Q1‐17/883C5962‐9461116HAAAS8S512K32P‐17/Q5962‐9461116HTA

AS8S512K32Q‐17/Q5962‐9461116HMCAS8S512K32Q1‐17/883C5962‐9461116HACAS8S512K32P‐17/Q5962‐9461116HTC

AS8S512K32Q‐17L/Q5962‐9461110HMAAS8S512K32Q1‐17L/8835962‐9461110HAAAS8S512K32P‐17L/Q5962‐9461110HTA

AS8S512K32Q‐17L/Q5962‐9461110HMCAS8S512K32Q1‐17L/8835962‐9461110HACAS8S512K32P‐17L/Q5962‐9461110HTC

AS8S512K32Q‐20/Q5962‐9461115HMAAS8S512K32Q1‐20/883C5962‐9461115HAAAS8S512K32P‐20/Q5962‐9461115HTA

AS8S512K32Q‐20/Q5962‐9461115HMCAS8S512K32Q1‐20/883C5962‐9461115HACAS8S512K32P‐20/Q5962‐9461115HTC

AS8S512K32Q‐20L/Q5962‐9461109HMAAS8S512K32Q1‐20L/8835962‐9461109HAAAS8S512K32P‐20L/Q5962‐9461109HTA

AS8S512K32Q

‐

20L/Q

5962

‐

9461109HMC

AS8S512K32Q1

‐

20L/883

5962

‐

9461109HAC

AS8S512K32P

‐

20L/Q

5962

‐

9461109HTC

AS8S512K32Q

‐

20L/Q



5962

‐

9461109HMC



AS8S512K32Q1

‐

20L/883



5962

‐

9461109HAC



AS8S512K32P

‐

20L/Q



5962

‐

9461109HTC



AS8S512K32Q‐25/Q5962‐9461114HMAAS8S512K32Q1‐25/883C5962‐9461114HAAAS8S512K32P‐25/Q5962‐9461114HTA

AS8S512K32Q‐25/Q5962‐9461114HMCAS8S512K32Q1‐25/883C5962‐9461114HACAS8S512K32P‐25/Q5962‐9461114HTC

AS8S512K32Q‐25L/Q5962‐9461108HMAAS8S512K32Q1‐25L/8835962‐9461108HAAAS8S512K32P‐25L/Q5962‐9461108HTA

AS8S512K32Q‐25L/Q5962‐9461108HMCAS8S512K32Q1‐25L/8835962‐9461108HACAS8S512K32P‐25L/Q5962‐9461108HTC

AS8S512K32Q‐35/Q5962‐9461113HMAAS8S512K32Q1‐35/883C5962‐9461113HAAAS8S512K32P‐35/Q5962‐9461113HTA

AS8S512K32Q‐35/Q5962‐9461113HMCAS8S512K32Q1‐35/883C5962‐9461113HACAS8S512K32P‐35/Q5962‐9461113HTC

AS8S512K32Q‐35L/Q5962‐9461107HMAAS8S512K32Q1‐35L/8835962‐9461107HAAAS8S512K32P‐35L/Q5962‐9461107HTA

AS8S512K32Q‐35L/Q5962‐9461107HMCAS8S512K32Q1‐35L/8835962‐9461107HACAS8S512K32P‐35L/Q5962‐9461107HTC

AS8S512K32Q 45/Q

5962 9461112HMA

AS8S512K32Q1 45/883C

5962 9461112HAA

AS8S512K32P 45/Q

5962 9461112HTA

AS8S512K32Q

‐

45/Q



5962

‐

9461112HMA



AS8S512K32Q1

‐

45/883C



5962

‐

9461112HAA



AS8S512K32P

‐

45/Q



5962

‐

9461112HTA



AS8S512K32Q‐45/Q5962‐9461112HMCAS8S512K32Q1‐45/883C5962‐9461112HACAS8S512K32P‐45/Q5962‐9461112HTC

AS8S512K32Q‐45L/Q5962‐9461106HMAAS8S512K32Q1‐45L/8835962‐9461106HAAAS8S512K32P‐45L/Q5962‐9461106HTA

AS8S512K32Q‐45L/Q5962‐9461106HMCAS8S512K32Q1‐45L/8835962‐9461106HACAS8S512K32P‐45L/Q5962‐9461106HTC

AS8S512K32Q‐55/Q5962‐9461111HMAAS8S512K32Q1‐55/883C5962‐9461111HAAAS8S512K32P‐55/Q5962‐9461111HTA

AS8S512K32Q‐55/Q5962‐9461111HMCAS8S512K32Q1‐55/883C5962‐9461111HACAS8S512K32P‐55/Q5962‐9461111HTC

AS8S512K32Q‐55L/Q5962‐9461105HMAAS8S512K32Q1‐55L/8835962‐9461105HAAAS8S512K32P‐55L/Q5962‐9461105HTA

AS8S512K32Q‐55L/Q5962‐9461105HMCAS8S512K32Q1‐55L/8835962‐9461105HACAS8S512K32P‐55L/Q5962‐9461105HTC

Pk Di t BQFP

MicrossPart# SMDPart#

AS8S512K32BQFP‐20/883C5962‐9562409HNC

AS8S512K32BQFP‐25/883C5962‐9562408HNC

AS8S512K32BQFP‐25/883C5962‐9562412HNC

AS8S512K32BQFP‐35/883C5962‐9562407HNC

AS8S512K32BQFP‐35/883C5962‐9562411HNC

AS8S512K32BQFP‐45/883C5962‐9562406HNC

AS8S512K32BQFP‐45/883C5962‐9562410HNC

Pac

ageDes

gnatorBQFP

AS8S512K32BQFP‐55/883C5962‐9562405HNC

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

DOCUMENT TITLE

512K x 32 SRAM MEMORY ARRAY

Rev # History Release Date Status

6.5 Updated Features, Temp Range & April 2010 Release

General Description - Page 1,

Updated Order Chart - Page 13,

Removed Space Processing - Page 13

6.6 Updated Ordering Table, Page 14 June 2010 Release

Updated DSCC Cross Reference, Page 15

Added SMD 5962-95624, Page 1

Added BQFP Package, Page 1 and added

BQFP drawing on page 13 (BQFP package

is listed on SMD 5962-95624)

6.7 Updated Q2 Spec, Page 10 July 2010 Release

6.8 Page 3 Changes: June 2011 Release

From To

•I

CC (mA)

-17 700 175

-20 650 150

-25 600 140

-35 570 130

-45 570 120

-55 550 110

•I

SBT1 (mA)

-12 80 40

-15 80 40

-17 240 40

-20 240 35

-25 190 35

-35 190 30

-45 150 30

-55 150 30

•I

SBT2(mA) 80 20

  •2VICCDR(mA) 20 10

  •3VICCDR(mA) 28 12

  •Removednotefrompage8"-12&-15havea32mAlimit".

SRAM

AS8S512K32

& AS8S512K32A

AS8S512K32 & AS8S512K32A

Rev. 6.9 08/13

Micross Components reserves the right to change products or specications without notice.

Rev # History Release Date Status

6.9 Added 68 Lead CQFP (BQFP) August 2013 Release

Military SMD Pinout Option