2N6714 2N6715 2N6726 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary silicon plastic power transistors designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO 2N6714 2N6726 40 2N6715 2N6727 50 30 40 UNITS V V VEBO IC 5.0 2.0 A IB PD 0.5 A 1.0 W PD TJ, Tstg 2.0 W -65 to +150 C Thermal Resistance JA 125 C/W Thermal Resistance JC 62.5 C/W MAX 0.1 UNITS A 0.1 A Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature V ELECTRICAL SYMBOL ICBO IEBO CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=Rated VCBO VEB=5.0V BVCBO BVCBO IC=1.0mA, (2N6714, 2N6726) IC=1.0mA, (2N6715, 2N6727) 40 V 50 V BVCEO BVCEO IC=10mA, (2N6714, 2N6726) IC=10mA, (2N6715, 2N6727) 30 V 40 V BVEBO VCE(SAT) IE=1.0mA IC=1.0A, IB=0.1A VCE=1.0V, IC=1.0A 5.0 VCE=1.0V, IC=0.1A VCE=1.0V, IC=1.0A 60 50 250 VCE=10V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0MHz 50 500 MHz 30 pF VBE(ON) hFE hFE fT Cob V 0.5 V 1.2 V R1 (31-July 2012) 2N6714 2N6715 2N6726 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-237 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (31-July 2012) w w w. c e n t r a l s e m i . c o m